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    APT20M45B Search Results

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    APT20M45B Price and Stock

    Microchip Technology Inc APT20M45BVRG

    MOSFET N-CH 200V 56A TO247
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    DigiKey APT20M45BVRG Tube 50
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    Mouser Electronics APT20M45BVRG
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    Verical APT20M45BVRG 65 5
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    Microchip Technology Inc APT20M45BVRG
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    Onlinecomponents.com APT20M45BVRG 69
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    TME APT20M45BVRG 1
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    NAC APT20M45BVRG Tube 35
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    Richardson RFPD APT20M45BVRG 50
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    Master Electronics APT20M45BVRG 69
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    Microchip Technology Inc APT20M45BVFRG

    MOSFET N-CH 200V 56A TO247
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    DigiKey APT20M45BVFRG Tube 50
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    Avnet Americas APT20M45BVFRG Tube 32 Weeks 50
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    Mouser Electronics APT20M45BVFRG
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    Microchip Technology Inc APT20M45BVFRG
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    Onlinecomponents.com APT20M45BVFRG
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    TME APT20M45BVFRG 1
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    NAC APT20M45BVFRG Tube 31
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    Master Electronics APT20M45BVFRG
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    APT Semiconductor APT20M45BNR

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    Bristol Electronics APT20M45BNR 1,396
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    APT20M45B Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT20M45BNFR Advanced Power Technology Power MOS IV Scan PDF
    APT20M45BNR Advanced Power Technology Power MOS IV - N-Channel Enhancement Mode Low Voltage Power MOSFETS Scan PDF
    APT20M45BVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45BVFR Advanced Power Technology POWER MOS V 200V 56A 0.045 Ohm Original PDF
    APT20M45BVFRG Microsemi Power FREDFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45BVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45BVR Philips Semiconductors 4-to-16 line decoder/demultiplexer with input latches Original PDF
    APT20M45BVRG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF

    APT20M45B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT20M45BVR

    Abstract: No abstract text available
    Text: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45BVR O-247 O-247 APT20M45BVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M45BVFR O-247 O-247

    APT20M45B

    Abstract: APT20M45BVR Diode 224
    Text: APT20M45BVR G 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves


    Original     		PDF APT20M45BVR O-247 APT20M45B Diode 224

    APT20M45BVFR

    Abstract: No abstract text available
    Text: APT20M45BVFR 200V POWER MOS V 56A 0.045Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M45BVFR O-247 O-247 APT20M45BVFR

    APT20M45BVR

    Abstract: No abstract text available
    Text: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45BVR O-247 O-247 APT20M45BVR

    APT20M45BVFR

    Abstract: No abstract text available
    Text: APT20M45BVFR 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		PDF APT20M45BVFR O-247 O-247 APT20M45BVFR

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR APT20M45/20M60BNFR O-247AD

    20M60BNFR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV< 200V 58A 200V 50A 0.045Í2 0.060Q A V A LA N C H E RATED FR EDFET N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR O-247AD 20M60BNFR

    TL 084L

    Abstract: APT20M45BNR APT20M60BNR 20M60
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR O-247AD CI00m27 TL 084L 20M60

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D O S APT20M45BNR 200V APT20M60BNR 200V 58A 0.04512 50A 0.0600 POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR APT20M45BNR APT20M60BNR MIL-STD-750 773nH, O-247AD

    20M60

    Abstract: APT20M60BNFR 20M60BN GD142 APT20M45BNFR BVJ 47 20M60BNFR
    Text: A d v a n ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV® 200V 58A 200V 50A 0.045U 0.060U AVALANCHE RATED FREDFET N-C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS ’d 'dm V GS V GSM PD t j ,t s t g


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR O-247AD 20M60 20M60BN GD142 BVJ 47 20M60BNFR

    20M60

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y Q D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV* 58A 50A 0.045Í2 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR APT20M45/20M60BNR O-247AD GGQm27 20M60

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,


    OCR Scan     		PDF APT20M45BVFR O-247 APT20M45BVFR

    0502045

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR sBWER MOS IV'01 200V 58A 0.0451» 200V 50A 0.06012 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR APT20M45BNFR APT20M45/20M60BNFR O-247AD 0502045

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT20M45BVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45BVR O-247 APT20M45BVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45BVR O-247

    S50J

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT20M45BVFR 200V 56A 0.0450 «i POWER MOS V F REDFET Power MOS V'” is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45BVFR O-247 APT20M45BVFR O-247AD S50J

    20m60

    Abstract: APT20M45
    Text: A dvanced P ow er Te c h n o l o g y • APT20M45BNR 200V APT20M60BNR 200V POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR O-247AD 20m60 APT20M45

    PS224

    Abstract: PS 224 max4860
    Text: APT20M45BVR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan     		PDF APT20M45BVR O-247 PS224 PS 224 max4860

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V POWER MOSV 56A 0.0450 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT20M45BVFR O-247 APT20M 45BVFR MIL-STD-750 O-247AD

    lg ds 325

    Abstract: No abstract text available
    Text: A dvanced P o w er T e c h n o lo g y APT20M45BVR 200V s6a o.o45ß POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45BVR O-247 APT20M45BVR MIL-STD-750 O-247AD lg ds 325

    APT20M45BNFR

    Abstract: No abstract text available
    Text: A d v a n c e d Pow er T e c h n o lo g y APT20M45BNFR APT20M60BNFR 200V 58A 0.045U 200V 50A 0.060Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNFR APT20M60BNFR APT20M60BNFR 00A/HS, 773nH, O-247AD

    Untitled

    Abstract: No abstract text available
    Text: •P\ A d v a n c e d W /Æ POW ER iiM T e c h n o l o g y APT20M45BNR 200V APT20M60BNR 200V 58A 0.045U 50A 0.060Í2 AVALANCHE RATED O * W ER MOS N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT20M45BNR APT20M60BNR for20M60B -10nS EAPT20Mfl 100mS O-247AD