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    APT5010LVR Search Results

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    APT5010LVR Price and Stock

    Microchip Technology Inc APT5010LVRG

    MOSFET N-CH 500V 47A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010LVRG Tube 32 1
    • 1 $18.44
    • 10 $18.44
    • 100 $14.975
    • 1000 $14.975
    • 10000 $14.975
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    Avnet Americas APT5010LVRG Tube 26 Weeks 1
    • 1 $18.44
    • 10 $18.44
    • 100 $15.93
    • 1000 $14.97
    • 10000 $14.97
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    Mouser Electronics APT5010LVRG 991
    • 1 $18.44
    • 10 $18.44
    • 100 $18.44
    • 1000 $15.93
    • 10000 $15.93
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    Verical APT5010LVRG 61 3
    • 1 -
    • 10 $26.637
    • 100 $26.637
    • 1000 $26.637
    • 10000 $26.637
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    Microchip Technology Inc APT5010LVRG
    • 1 $18.44
    • 10 $18.44
    • 100 $15.93
    • 1000 $14.62
    • 10000 $14.13
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    Onlinecomponents.com APT5010LVRG 61
    • 1 $20.49
    • 10 $18.28
    • 100 $14.61
    • 1000 $14.46
    • 10000 $14.46
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    TME APT5010LVRG 1
    • 1 $26.67
    • 10 $21.21
    • 100 $21.21
    • 1000 $21.21
    • 10000 $21.21
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    NAC APT5010LVRG Tube 20
    • 1 $17.11
    • 10 $17.11
    • 100 $15.76
    • 1000 $14.61
    • 10000 $14.61
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    Richardson RFPD APT5010LVRG 30
    • 1 -
    • 10 -
    • 100 $15.82
    • 1000 $15.82
    • 10000 $15.82
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    Master Electronics APT5010LVRG 61
    • 1 $20.49
    • 10 $18.28
    • 100 $14.61
    • 1000 $14.46
    • 10000 $14.46
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    Microsemi Corporation APT5010LVR

    MOSFET Transistor, N-Channel, TO-264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components APT5010LVR 8
    • 1 $14.715
    • 10 $13.08
    • 100 $13.08
    • 1000 $13.08
    • 10000 $13.08
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    APT5010LVR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT5010LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010LVRG Microchip Technology MOSFET N-CH 500V 47A TO264 Original PDF

    APT5010LVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5010LVR

    Abstract: apt5010l
    Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    PDF APT5010LVR O-264 O-264 APT5010LVR apt5010l

    3.5kw pfc

    Abstract: UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc
    Text: APT 0101 By: Denis Grafham IMPROVED POWER MOSFETS BOOST EFFICIENCY IN A 3.5kW SINGLE PHASE PFC IMPROVED POWERMOSFETS BOOST EFFICIENCY IN A 3.5KW SINGLE PHASE PFC Author: Denis Grafham, European Applications, Advanced Power Technology, F-24300 Nontron Abstract:


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    PDF F-24300 NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D-90471N 3.5kw pfc UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    uc3854 3kw pfc

    Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
    Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager


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    PDF APT9901 B-1330 uc3854 3kw pfc uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    uc3854 3kw pfc

    Abstract: UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc
    Text: APT9901 By Kenneth Dierberger and Denis Grafham OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS Kenneth Dierberger, Manager Technical Marketing, Advanced PowerTechnology, 405 S.W. Columbia St., Bend, OR 97702, USA


    Original
    PDF APT9901 B-1330 UC3854" NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D90471N uc3854 3kw pfc UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc

    APT5010LVR

    Abstract: TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus
    Text: APPLICATION NOTE By: APT9902 Denis Grafham CUTTING-EDGE MOUNT DOWN METHODS BOOST POWER SEMICONDUCTOR PERFORMANCE 1 APT9902 Cutting-Edge Mount Down Methods Boost Power Semiconductor Performance and Cut System Costs Denis Grafham, European Applications Advanced Power Technology


    Original
    PDF APT9902 B-1330 O-264 APT5010LVR TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus

    APT0103

    Abstract: APT9302 APT5010LVR AN-944 APT50M75LL MOSFET IGBT THEORY AND APPLICATIONS Powercon
    Text: Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets Ralph McArthur Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, Oregon 97702 Power MOSFETs and IGBTs have established themselves as premier power semiconductors in


    Original
    PDF AN-944. APT0103 APT9302 APT5010LVR AN-944 APT50M75LL MOSFET IGBT THEORY AND APPLICATIONS Powercon

    APT5010LVR

    Abstract: No abstract text available
    Text: APT5010LVR A dvanced P o w er Te c h n o l o g y P O W E R M O 500 ' S 47 V 0 100 2 A . Í V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT5010LVR O-264 APT5010LVR MIL-STD-750 O-264AA

    CCO-40

    Abstract: APT5010LVR 250DS
    Text: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    PDF APT501OLVR O-264 APT5010LVR CCO-40 250DS

    Untitled

    Abstract: No abstract text available
    Text: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT501OLVR O-264 APT5010LVR 5r182