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    APT501 Price and Stock

    Microchip Technology Inc APT5017BVRG

    MOSFET N-CH 500V 30A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5017BVRG Tube 243 1
    • 1 $12.33
    • 10 $12.33
    • 100 $10
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    Mouser Electronics APT5017BVRG 209
    • 1 $12.33
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    Newark APT5017BVRG Bulk 50
    • 1 $12.33
    • 10 $12.33
    • 100 $10.63
    • 1000 $10.01
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    Microchip Technology Inc APT5010LVRG

    MOSFET N-CH 500V 47A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010LVRG Tube 51 1
    • 1 $18.44
    • 10 $18.44
    • 100 $14.975
    • 1000 $14.975
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    Mouser Electronics APT5010LVRG 929
    • 1 $18.44
    • 10 $18.44
    • 100 $18.44
    • 1000 $15.93
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    Verical APT5010LVRG 61 3
    • 1 -
    • 10 $22.906
    • 100 $21.151
    • 1000 $21.151
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    Richardson RFPD APT5010LVRG 30
    • 1 -
    • 10 -
    • 100 $15.82
    • 1000 $15.82
    • 10000 $15.82
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    Microchip Technology Inc APT5010LFLLG

    MOSFET N-CH 500V 46A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010LFLLG Tube 43 1
    • 1 $17.39
    • 10 $17.39
    • 100 $14.125
    • 1000 $14.125
    • 10000 $14.125
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    Microchip Technology Inc APT5010LFLLG
    • 1 $17.39
    • 10 $17.39
    • 100 $15.03
    • 1000 $13.77
    • 10000 $13.32
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    NAC APT5010LFLLG Tube 22
    • 1 $16.14
    • 10 $16.14
    • 100 $14.87
    • 1000 $13.78
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    Avnet Silica APT5010LFLLG 34 Weeks 40
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    EBV Elektronik APT5010LFLLG 33 Weeks 40
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    Master Electronics APT5010LFLLG
    • 1 $16.62
    • 10 $15.27
    • 100 $13.95
    • 1000 $13.54
    • 10000 $13.54
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    Microchip Technology Inc APT5014BLLG

    MOSFET N-CH 500V 35A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5014BLLG Tube 41 1
    • 1 $14.9
    • 10 $14.9
    • 100 $12.0875
    • 1000 $12.0875
    • 10000 $12.0875
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    Avnet Americas APT5014BLLG Tube 26 Weeks 40
    • 1 $14.9
    • 10 $14.9
    • 100 $12.87
    • 1000 $12.09
    • 10000 $12.09
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    Mouser Electronics APT5014BLLG 284
    • 1 $14.9
    • 10 $14.9
    • 100 $14.9
    • 1000 $12.87
    • 10000 $12.87
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    Microchip Technology Inc APT5014BLLG
    • 1 $14.9
    • 10 $14.9
    • 100 $12.87
    • 1000 $11.8
    • 10000 $11.42
    		Buy Now
    TME APT5014BLLG 1
    • 1 $21.55
    • 10 $17.04
    • 100 $17.04
    • 1000 $17.04
    • 10000 $17.04
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    NAC APT5014BLLG Tube 25
    • 1 $14.22
    • 10 $14.22
    • 100 $12.89
    • 1000 $11.79
    • 10000 $11.79
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    Richardson RFPD APT5014BLLG 1
    • 1 $13.28
    • 10 $13.28
    • 100 $12.77
    • 1000 $12.77
    • 10000 $12.77
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    Master Electronics APT5014BLLG
    • 1 -
    • 10 $14.43
    • 100 $12.24
    • 1000 $11.58
    • 10000 $11.58
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    Microchip Technology Inc APT5015BVFRG

    MOSFET N-CH 500V 32A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5015BVFRG Tube 40 1
    • 1 $13.36
    • 10 $13.36
    • 100 $10.8375
    • 1000 $10.8375
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    Avnet Americas APT5015BVFRG Tube 249 32 Weeks 1
    • 1 $13.36
    • 10 $13.36
    • 100 $11.54
    • 1000 $10.84
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    Onlinecomponents.com APT5015BVFRG
    • 1 -
    • 10 $12.94
    • 100 $10.97
    • 1000 $10.38
    • 10000 $10.38
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    TME APT5015BVFRG 1
    • 1 $19.32
    • 10 $15.37
    • 100 $15.37
    • 1000 $15.37
    • 10000 $15.37
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    New Advantage Corporation APT5015BVFRG 150 1
    • 1 -
    • 10 -
    • 100 $15.66
    • 1000 $14.61
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    Find more APT501 price and stock on Findchips.com

    APT501 Datasheets (140)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5010B2 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT5010B2FLL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010B2FLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2FLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2L Advanced Power Technology 500V 46A 0.100Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5010B2LC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2LC Advanced Power Technology POWER MOS VI 500V 47A 0.100 Ohm Original PDF
    APT5010B2LL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5010B2LLG Microsemi Power MOSFET; Package: T-MAX [B2]; ID (A): 46; RDS(on) (Ohms): 0.1; BVDSS (V): 500; Original PDF
    APT5010B2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VRG Microchip Technology MOSFET N-CH 500V 47A T-MAX Original PDF
    APT5010JFLL Advanced Power Technology POWER MOS 7 500V 44A 0.100 Ohm Original PDF
    APT5010JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010JLC Advanced Power Technology POWER MOS VI 500V 44A 0.100 Ohm Original PDF
    APT5010JLL Advanced Power Technology POWER MOS 7 500V 44A 0.100 Ohm Original PDF
    ...

    APT501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5015BLC

    Abstract: No abstract text available
    Text: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5015BLC O-247 O-247 APT5015BLC

    APT5017

    Abstract: APT5017BLC APT5017SLC
    Text: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5017BLC APT5017SLC O-247 O-247 APT5017 APT5017 APT5017BLC APT5017SLC

    APT5014

    Abstract: APT5014B2LC APT5014LLC
    Text: APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5014B2LC APT5014LLC O-264 O-264 APT5014 O-247 APT5014 APT5014B2LC APT5014LLC

    APT5010LVR

    Abstract: apt5010l
    Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5010LVR O-264 O-264 APT5010LVR apt5010l

    5622

    Abstract: No abstract text available
    Text: APT5014B2VR 37A 0.140Ω 500V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5014B2VR O-247 5622

    Untitled

    Abstract: No abstract text available
    Text: APT5014BLL APT5014SLL 500V 35A 0.140W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5014BLL APT5014SLL O-247 O-247

    APT5010

    Abstract: APT5010LFLL
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 APT5010 APT5010LFLL

    APT5010JLL

    Abstract: No abstract text available
    Text: APT5010JLL 500V 41A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLL APT5010JLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010JLL 500V 40A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT5010JLL

    MOS 4362

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 MOS 4362

    APT5010JVR

    Abstract: No abstract text available
    Text: APT5010JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation · Direct mounting to heatsink isolated package · Low junction to case thermal resistance · Very rugged · Low profile D G Application


    Original     		PDF APT5010JVRU2 100mW OT-227) APT5010JVR

    APT5017

    Abstract: APT5017HLL
    Text: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5017HLL O-258 O-258 APT5017 APT5017HLL

    APT5016BFLL

    Abstract: APT5016SFLL
    Text: APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5016BFLL APT5016SFLL O-247 O-247 APT5016BFLL APT5016SFLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT5010B2LL APT5010LLL O-247

    Untitled

    Abstract: No abstract text available
    Text: APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5016BFLL APT5016SFLL O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5014LVR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5012JNU2 5012JNU2 OT-227 Page68

    Untitled

    Abstract: No abstract text available
    Text: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd


    OCR Scan     		PDF APT5012JNU3 5012JNU3

    ls 7400 n

    Abstract: No abstract text available
    Text: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®


    OCR Scan     		PDF APT5010B2VFR O-247 ls 7400 n

    Untitled

    Abstract: No abstract text available
    Text: APT5014B2VR A d v a n ced W /Æ P o w e r Tec h n o lo g y • R soov 37a o.i4oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5014B2VR O-247

    c 503 K

    Abstract: lg ds 325
    Text: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5012JNU3 5012JNU3 OT-227 c 503 K lg ds 325

    BAVP

    Abstract: APT5085/501R1BN
    Text: AD VA N C E D PO WE R T E C H N O L O G Y blE D 0 2 37 ^0 ^ 0000 7^ 7 DD3 IAVP ADVANCED P o w er Te c h n o l o g y 9 O D O s ,1 »TM POWER MOS IV APT5085GN APT4585GN APT501R1GN APT451R1GN 500V 7.0A 0.85Q 450V 7.0A 0.85Q 500V 6.5A 1.10Q 450V 6.5A 1.10ß


    OCR Scan     		PDF APT5085GN APT4585GN APT501R1GN APT451R1GN 4585GN 5085GN 451R1GN RGURE11, O-257AA BAVP APT5085/501R1BN

    CCO-40

    Abstract: APT5010LVR 250DS
    Text: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT501OLVR O-264 APT5010LVR CCO-40 250DS