Untitled
Abstract: No abstract text available
Text: APT501R1GN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)6.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)
|
Original
|
PDF
|
APT501R1GN
|
BAVP
Abstract: APT5085/501R1BN
Text: AD VA N C E D PO WE R T E C H N O L O G Y blE D 0 2 37 ^0 ^ 0000 7^ 7 DD3 IAVP ADVANCED P o w er Te c h n o l o g y 9 O D O s ,1 »TM POWER MOS IV APT5085GN APT4585GN APT501R1GN APT451R1GN 500V 7.0A 0.85Q 450V 7.0A 0.85Q 500V 6.5A 1.10Q 450V 6.5A 1.10ß
|
OCR Scan
|
PDF
|
APT5085GN
APT4585GN
APT501R1GN
APT451R1GN
4585GN
5085GN
451R1GN
RGURE11,
O-257AA
BAVP
APT5085/501R1BN
|
APT1004RGN
Abstract: No abstract text available
Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750
|
OCR Scan
|
PDF
|
APT5011AFN
APT40M
80AFN
APT1004RGN
|