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    APT10050LVFR Search Results

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    APT10050LVFR Price and Stock

    Microchip Technology Inc APT10050LVFRG

    MOSFET N-CH 1000V 21A TO264
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    DigiKey APT10050LVFRG Tube 25
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    Avnet Americas APT10050LVFRG Tube 25
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    Mouser Electronics APT10050LVFRG 27
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    Newark APT10050LVFRG Bulk 25
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    Microchip Technology Inc APT10050LVFRG
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    Onlinecomponents.com APT10050LVFRG
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    TME APT10050LVFRG 19 1
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    NAC APT10050LVFRG Tube 15
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    EBV Elektronik APT10050LVFRG 33 Weeks 25
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    Master Electronics APT10050LVFRG
    • 1 $24.65
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    APT10050LVFR Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT10050LVFR Advanced Power Technology POWER MOS V 1000V 21A 0.500 Ohm Original PDF
    APT10050LVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10050LVFR Microsemi Power MOS V FREDFET Original PDF
    APT10050LVFRG Microchip Technology MOSFET N-CH 1000V 21A TO264 Original PDF

    APT10050LVFR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10050B2VFR

    Abstract: APT10050LVFR
    Text: APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050B2VFR APT10050LVFR O-264 O-264 APT10050 O-247 APT10050B2VFR APT10050LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050LVFR O-264 O-264 APT10050LVFR

    APT10050LVFR

    Abstract: No abstract text available
    Text: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050LVFR O-264 O-264 APT10050LVFR

    APT10050B2VFR

    Abstract: APT10050LVFR
    Text: APT10050B2VFR APT10050LVFR 1000V 21A 0.500Ω B2VFR POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050B2VFR APT10050LVFR O-264 O-264 APT10050B2VFR O-247 APT10050LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10050B2VFR APT10050LVFR 1000V 21A 0.500Ω POWER MOS V B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050B2VFR APT10050LVFR O-264 O-264 APT10050B2VFR O-247

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOSV 21A 0.500Í2 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10050LVFR O-264 APT10050LVR O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR A D V A N CED PO W ER Te c h n o l o g y 1000V POWER MOS V 21A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10050LVFR O-264 APT10050LVFR

    APT10050LVR

    Abstract: B21 diode
    Text: APT10050LVFR A d van ced P o w er Te c h n o l o g y ' 1000V POWER MOS V FREDFET 21A 0.500Í2 I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10050LVFR O-264 APT10050LVR 00A/ns, O-264AA B21 diode

    Untitled

    Abstract: No abstract text available
    Text: A dvanced PO W ER Te c h n o lo g y APT10050LVFR iooov 21 a o.sooq POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10050LVFR O-264 APT10050LVFR 100mS

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr