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    APT10050LVR Search Results

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    APT10050LVR Price and Stock

    Microchip Technology Inc APT10050LVRG

    MOSFET N-CH 1000V 21A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10050LVRG Tube 26 1
    • 1 $23.97
    • 10 $23.97
    • 100 $19.4375
    • 1000 $19.4375
    • 10000 $19.4375
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    Avnet Americas APT10050LVRG Tube 26 Weeks 25
    • 1 $23.97
    • 10 $23.97
    • 100 $20.7
    • 1000 $19.46
    • 10000 $19.46
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    Mouser Electronics APT10050LVRG 1,739
    • 1 $23.97
    • 10 $23.97
    • 100 $20.7
    • 1000 $20.7
    • 10000 $20.7
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    Newark APT10050LVRG Bulk 25
    • 1 $23.97
    • 10 $23.97
    • 100 $20.7
    • 1000 $19.46
    • 10000 $19.46
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    Microchip Technology Inc APT10050LVRG
    • 1 $23.97
    • 10 $23.97
    • 100 $20.7
    • 1000 $18.98
    • 10000 $18.37
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    TME APT10050LVRG 10 1
    • 1 $40.2
    • 10 $32
    • 100 $32
    • 1000 $32
    • 10000 $32
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    NAC APT10050LVRG Tube 16
    • 1 $22.21
    • 10 $22.21
    • 100 $20.46
    • 1000 $18.96
    • 10000 $18.96
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    Richardson RFPD APT10050LVRG 25
    • 1 -
    • 10 -
    • 100 $20.54
    • 1000 $20.54
    • 10000 $20.54
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    Avnet Silica APT10050LVRG 28 Weeks 25
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    EBV Elektronik APT10050LVRG 27 Weeks 25
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    Master Electronics APT10050LVRG
    • 1 $22.87
    • 10 $21.01
    • 100 $19.2
    • 1000 $18.63
    • 10000 $18.63
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    APT10050LVR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10050LVR Cooper Bussmann Industrial HRC Fuse Original PDF
    APT10050LVR Microsemi Power MOS V MOSFET Original PDF
    APT10050LVRG Microchip Technology MOSFET N-CH 1000V 21A TO264 Original PDF

    APT10050LVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10050LVR

    Abstract: No abstract text available
    Text: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT10050LVR O-264 O-264 APT10050LVR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    smps 1kW

    Abstract: smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet
    Text: APT0001 By: Richard Frey, P.E. High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples 1 High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples Introduction With the improvement in high power MOSFETs of late


    Original
    PDF APT0001 smps 1kW smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT10050LVR O-264

    TO-264AA

    Abstract: APT10050LVR
    Text: APT10050LVR A DVAN CED P ow er Te c h n o lo g y 1000V 21A 0.500Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing der >ity and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT10050LVR O-264 APT10050LVR MIL-STD-750 O-264AA TO-264AA

    APT10050LVR

    Abstract: No abstract text available
    Text: APT10050LVR • R A dvanced W .\A pow er Te c h n o lo g y " 1000v 21 a o.sooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    PDF APT10050LVR 1000v O-264 APT10050LVR

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


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    PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOSV 21A 0.500Í2 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT10050LVFR O-264 APT10050LVR O-264AA

    APT10050LVR

    Abstract: B21 diode
    Text: APT10050LVFR A d van ced P o w er Te c h n o l o g y ' 1000V POWER MOS V FREDFET 21A 0.500Í2 I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT10050LVFR O-264 APT10050LVR 00A/ns, O-264AA B21 diode