APT10040B2
Abstract: No abstract text available
Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VFR
APT10040LVFR
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APT10040
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APT10040B2
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Untitled
Abstract: No abstract text available
Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VR
APT10040LVR
O-264
O-264
APT10040
O-247
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050590
Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VFR
APT10040LVFR
O-264
O-264
APT10040
FO810
MIL-STD-750
050590
APT10040B2
APT10040B2VFR
APT10040LVFR
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96-MH
Abstract: No abstract text available
Text: APT10040B2LC APT10040LLC 1000V 25A 0.400W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
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APT10040B2LC
APT10040LLC
O-264
O-264
APT10040
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96-MH
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Untitled
Abstract: No abstract text available
Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VR
APT10040LVR
O-264
O-264
APT10040
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050590
Abstract: APT10040B2VR APT10040LVR
Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VR
APT10040LVR
O-264
O-264
APT10040
O-247
050590
APT10040B2VR
APT10040LVR
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Untitled
Abstract: No abstract text available
Text: APT10040B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VR
APT10040LVR
O-264
O-264
APT10040
O-247
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Untitled
Abstract: No abstract text available
Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10040B2VFR
APT10040LVFR
O-264
O-264
APT10040
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT6015LVR
5020bn
APT6011LVFR
arf450
5017bvr
APT2*61D120J
FREDFETs
apt8015jvr
APT100GF60LR
APT5014LVR
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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APT10040CFN
Abstract: APT9040CFN apt10040gfn
Text: ADVANCED POWER TECHNOLOGY GOOObDD bbb • M^E D A VP A D V A N C E D MHJWER T-Sfl-is ? D F-Pack CF : Techno lo g y 5 APT10040CFN 1000V 24.5A 0.40 APT9040CFN 900V 24.5A 0.40 ft Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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APT10040GFN
APT9040CFN
APT10040CFN
MIL-STD-750
APT10040CFN
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APT100-101DN
Abstract: APT50 APT6014 APT6060DN
Text: A DV AN CE D POWER T ECHNOL OGY 2DE D • 0257^0^ 104 D R A IN SOURCE VO LTAG E BVDSS VOLTS APT10040D N 1000 APT1001R D N 1000 APT100-101 DN 1000 APT1002R D N 1000 AP T1003R 5D N 1000 900 APT9040D N APT901R D N 900 APT90-101 DN 900 APT902R D N 900 APT903R 5D N
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O-247
APT100-101DN
APT50
APT6014
APT6060DN
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APT1003R5DN
Abstract: APT6060DN APT901RDN APT1001RDN APT1002RDN APT10040DN APT902RDN APT903R5DN APT9040DN B105
Text: AD VAN CE D f TECHNOLOGY 20E D 0257^0^ 00ÜQ274 3 UNPACKAGED D IE PRO D U CTS 104 D R A IN SOURCE VO LTAG E BVDSS VOLTS APT10040DN 1000 APT1001RD N 1000 A P T 1 00-101 DN 1000 APT1002RDN 1000 APT1003R5D N 1000 900 APT9040D N APT901RD N 900 A P T9 0- 1 01 DN
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APT10040DN
APT1001RDN
APT100-101
APT1002RDN
APT1003R5DN
APT9040DN
APT901RDN
APT90-101
APT902
APT4007DN
APT6060DN
APT902RDN
APT903R5DN
B105
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APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
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APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
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APT1001RD
Abstract: APT5023
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
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APT-104
APT-105
APT-106
APT-107
APT-108
APT1001RD
APT5023
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