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    APT50 Price and Stock

    Microchip Technology Inc APT50GN60BDQ2G

    IGBT TRENCH FS 600V 107A TO247
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    DigiKey APT50GN60BDQ2G Tube 113 1
    • 1 $7.27
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    Avnet Americas APT50GN60BDQ2G Tube 28 Weeks 80
    • 1 $7.27
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    Mouser Electronics APT50GN60BDQ2G 1,514
    • 1 $7.27
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    Newark APT50GN60BDQ2G Bulk 80
    • 1 $7.27
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    Microchip Technology Inc APT50GN60BDQ2G
    • 1 $7.27
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    Onlinecomponents.com APT50GN60BDQ2G
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    TME APT50GN60BDQ2G 1
    • 1 $13.58
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    NAC APT50GN60BDQ2G Tube 52
    • 1 $6.94
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    Richardson RFPD APT50GN60BDQ2G 80
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    Microchip Technology Inc APT50GN60BG

    IGBT TRENCH FS 600V 107A TO247
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    DigiKey APT50GN60BG Tube 108 1
    • 1 $5.34
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    Avnet Americas APT50GN60BG Tube 28 Weeks 110
    • 1 $5.34
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    Verical APT50GN60BG 5 2
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    Arrow Electronics APT50GN60BG 5 28 Weeks 1
    • 1 $3.185
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    Newark APT50GN60BG Bulk 110
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    Microchip Technology Inc APT50GN60BG
    • 1 $5.34
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    • 100 $4.6
    • 1000 $4.23
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    Onlinecomponents.com APT50GN60BG
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    NAC APT50GN60BG Tube 72
    • 1 $5.1
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    Richardson RFPD APT50GN60BG 110
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    Avnet Silica APT50GN60BG 30 Weeks 110
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    Microchip Technology Inc APT50DF170HJ

    BRIDGE RECT 1P 1.7KV 50A SOT227
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    DigiKey APT50DF170HJ Tube 86 1
    • 1 $37.59
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    Onlinecomponents.com APT50DF170HJ
    • 1 $38.75
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    Master Electronics APT50DF170HJ
    • 1 $38.75
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    • 100 $30.56
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    Microchip Technology Inc APT5020BVRG

    MOSFET N-CH 500V 26A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5020BVRG Tube 60 1
    • 1 $10
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    • 100 $8.125
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    Mouser Electronics APT5020BVRG 485
    • 1 $10
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    • 100 $8.63
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    Verical APT5020BVRG 200 1
    • 1 $9.949
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    • 100 $8.519
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    Arrow Electronics APT5020BVRG 200 26 Weeks 1
    • 1 $9.949
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    • 100 $8.106
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    Microchip Technology Inc APT5010LFLLG

    MOSFET N-CH 500V 46A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010LFLLG Tube 43 1
    • 1 $17.39
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    • 100 $14.125
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    Find more APT50 price and stock on Findchips.com

    APT50 Datasheets (433)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5010B2 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT5010B2FLL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010B2FLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2FLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2L Advanced Power Technology 500V 46A 0.100Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5010B2LC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2LC Advanced Power Technology POWER MOS VI 500V 47A 0.100 Ohm Original PDF
    APT5010B2LL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5010B2LLG Microsemi Power MOSFET; Package: T-MAX [B2]; ID (A): 46; RDS(on) (Ohms): 0.1; BVDSS (V): 500; Original PDF
    APT5010B2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VRG Microchip Technology MOSFET N-CH 500V 47A T-MAX Original PDF
    APT5010JFLL Advanced Power Technology POWER MOS 7 500V 44A 0.100 Ohm Original PDF
    APT5010JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010JLC Advanced Power Technology POWER MOS VI 500V 44A 0.100 Ohm Original PDF
    APT5010JLL Advanced Power Technology POWER MOS 7 500V 44A 0.100 Ohm Original PDF
    ...

    APT50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT50DL60BCT

    Abstract: TO247 5134 D3PAK
    Text: APT50DL60BCT G 600V 50A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		PDF APT50DL60BCT O-247 TO247 5134 D3PAK

    transistors mj 1504

    Abstract: Mosfet 600V, 20A diode schottky 600v infineon 20A 1,0V ISOTOP
    Text: APT50N60JCCU2 ISOTOP Boost chopper VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K


    Original     		PDF APT50N60JCCU2 transistors mj 1504 Mosfet 600V, 20A diode schottky 600v infineon 20A 1,0V ISOTOP

    APT50M75JLLU3

    Abstract: mosfet 600V 30A
    Text: APT50M75JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon


    Original     		PDF APT50M75JLLU3 OT-227) APT50M75JLLU3 mosfet 600V 30A

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT120B2R APT50GT120LR 50KHz

    APT5015BLC

    Abstract: No abstract text available
    Text: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5015BLC O-247 O-247 APT5015BLC

    APT5017

    Abstract: APT5017BLC APT5017SLC
    Text: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5017BLC APT5017SLC O-247 O-247 APT5017 APT5017 APT5017BLC APT5017SLC

    APT5014

    Abstract: APT5014B2LC APT5014LLC
    Text: APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5014B2LC APT5014LLC O-264 O-264 APT5014 O-247 APT5014 APT5014B2LC APT5014LLC

    Untitled

    Abstract: No abstract text available
    Text: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For


    Original     		PDF APT50SM120B APT50SM120S

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5024BVFR O-247 O-247 APT5024BVR

    APT5010LVR

    Abstract: apt5010l
    Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5010LVR O-264 O-264 APT5010LVR apt5010l

    5622

    Abstract: No abstract text available
    Text: APT5014B2VR 37A 0.140Ω 500V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5014B2VR O-247 5622

    APT50M80B2VFR

    Abstract: ED 58A
    Text: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VFR Current031) MIL-STD-750 APT50M80B2VFR ED 58A

    Untitled

    Abstract: No abstract text available
    Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN


    OCR Scan     		PDF APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN

    Untitled

    Abstract: No abstract text available
    Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5014LVR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS


    OCR Scan     		PDF GG01132 APT5040BNF APT5050BNF 5040BNF 5050BNF O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5024BVR O-247 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT5020HJN E145592 S020HJN OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5012JNU2 5012JNU2 OT-227 Page68

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P ow er T e c h n o lo g y 9 D APT5027SNR Os POWER MOS IV 500V 20.0A 0.27U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .


    OCR Scan     		PDF APT5027SNR 100mS

    Untitled

    Abstract: No abstract text available
    Text: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd


    OCR Scan     		PDF APT5012JNU3 5012JNU3

    APT5040BNFR

    Abstract: No abstract text available
    Text: ADVANCED PO W ER Te c h n o l o g y * APT5040BNFR APT5050BNFR POWER MOS IV« 500V 500V 16A 0.40Ü 14A 0.500 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5040BNFR APT5050BNFR 00A/ns) APT5040BNFR

    APT5027BVR

    Abstract: No abstract text available
    Text: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5027BVR O-247 100Wjis) MIL-STD-750 O-247AD APT5027BVR

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR


    OCR Scan     		PDF APT50GL60BN