Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    050590 Search Results

    SF Impression Pixel

    050590 Price and Stock

    Seeed Development Ltd 306050590

    RF EXPLORER RFEA-1 EXTERNAL LIGH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 306050590 Bulk 166 1
    • 1 $29.9
    • 10 $29.9
    • 100 $29.9
    • 1000 $29.9
    • 10000 $29.9
    		Buy Now
    Newark 306050590 Bulk 5 1
    • 1 $10.45
    • 10 $10.45
    • 100 $10.45
    • 1000 $10.45
    • 10000 $10.45
    		Buy Now

    Perle 05059020

    SFP PSFP-1000D-S2LC10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 05059020 37 1
    • 1 $370
    • 10 $370
    • 100 $370
    • 1000 $370
    • 10000 $370
    		Buy Now
    NAC 05059020 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Perle 05059090

    SFP PSFP-1000D-S1LC80U
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 05059090 21 1
    • 1 $2417
    • 10 $2417
    • 100 $2417
    • 1000 $2417
    • 10000 $2417
    		Buy Now
    NAC 05059090 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Perle 05059070

    SFP PSFP-1000D-S1LC60U
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 05059070 17 1
    • 1 $2122
    • 10 $2122
    • 100 $2122
    • 1000 $2122
    • 10000 $2122
    		Buy Now
    NAC 05059070 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Perle 05059010

    SFP PSFP-100D-S1LC80D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 05059010 17 1
    • 1 $1214
    • 10 $1214
    • 100 $1214
    • 1000 $1214
    • 10000 $1214
    		Buy Now
    NAC 05059010 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 050590 price and stock on Findchips.com

    050590 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT8024B2VFR

    Abstract: No abstract text available
    Text: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VFR APT8024LVFR O-264 O-264 APT8024 IN810 MIL-STD-750 APT8024B2VFR

    APT5020BLC

    Abstract: No abstract text available
    Text: APT5020BLC APT5020SLC 500V 26A 0.200Ω POWER MOS VITM BLC D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and


    Original     		PDF APT5020BLC APT5020SLC O-247 O-247

    A20M18LVFR

    Abstract: APT20M18B2VFR
    Text: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M18B2VFR A20M18LVFR O-264 O-264 APT20M18B2VFR O-247 A20M18LVFR

    APL1001J

    Abstract: No abstract text available
    Text: S S D G 27 2 T- D G SO APL1001J S ISOTOP 18.0A 0.60W 1000V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APL1001J E145592 APL1001J

    APL1001J

    Abstract: No abstract text available
    Text: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60Ω "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APL1001J E145592 APL1001J

    APL501J

    Abstract: No abstract text available
    Text: S S D G 27 2 T- D G SO APL501J S ISOTOP 43.0A 0.12W 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APL501J E145592 APL501J

    xcf16pfs

    Abstract: Xilinx XCF04S XCF01S XC2V80 DS026
    Text: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.3 May 7, 2004 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles


    Original     		PDF DS123 xcf16pfs Xilinx XCF04S XCF01S XC2V80 DS026

    TO-247 Package

    Abstract: No abstract text available
    Text: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5020BLC O-247 O-247 MIL-STD-750 TO-247 Package

    Untitled

    Abstract: No abstract text available
    Text: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VFR APT8024LVFR O-264 O-264 APT8024B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M18B2VFR A20M18LVFR O-264 O-264 APT20M18B2VFR O-247

    813A

    Abstract: APL1001J
    Text: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60W "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APL1001J E145592 813A APL1001J

    XCF16PFS48C

    Abstract: XC2V80
    Text: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.0 November 5, 2003 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From


    Original     		PDF DS123 XCF01SVO20 XCF02SVO20 XCF04SVO20 XCF08PVO48 XCF16PVO48 XCF32PVO48 XCF08PFS48 XCF16PFS48 XCF32PFS48 XCF16PFS48C XC2V80

    XCF04S pcb

    Abstract: XC2V80
    Text: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles


    Original     		PDF DS123 VOG20, FSG48, VOG48. XC2VP125 XCF04S pcb XC2V80

    APT10040B2

    Abstract: No abstract text available
    Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VFR APT10040LVFR O-264 O-264 APT10040 O-247 APT10040B2

    NW4004-CS01

    Abstract: 33070 S1365 050590
    Text: SAW Bandpass Filter 250151B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions


    Original     		PDF 250151B ITF04A001 S1365 NW4004-CS01 NW4004-CS01 33070 S1365 050590

    Untitled

    Abstract: No abstract text available
    Text: S S D D G G 27 2 T- SO APL1001J S ISOTOP 1000V 18.0A 0.60W "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APL1001J E145592 APL1001J

    050590

    Abstract: APT10040B2 APT10040B2VFR APT10040LVFR
    Text: APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VFR APT10040LVFR O-264 O-264 APT10040 FO810 MIL-STD-750 050590 APT10040B2 APT10040B2VFR APT10040LVFR

    F5044

    Abstract: XCF02SVOG20C Xilinx XCF08P xcf04svOg20c XCF16PFS48C XCF04S fit XCF01S-VO20C F50450 marking aab 8 tsop XCF04SVO20C0936
    Text: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles


    Original     		PDF DS123 PCN2004-18 F5044 XCF02SVOG20C Xilinx XCF08P xcf04svOg20c XCF16PFS48C XCF04S fit XCF01S-VO20C F50450 marking aab 8 tsop XCF04SVO20C0936

    PF7700

    Abstract: No abstract text available
    Text: APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VFR APT8024LVFR O-264 O-264 APT8024 Curr084) O-247 PF7700

    TO-264 Package

    Abstract: APT5010LLC
    Text: APT5010LLC 500V 47A 0.100 Ω POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5010LLC O-264 O-264 APT5010LLC 1TD-750 TO-264 Package

    APT5020BLC

    Abstract: APT5020 APT5020SLC
    Text: APT5020BLC APT5020SLC 500V 26A 0.200W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5020BLC APT5020SLC O-247 O-247 APT5020 APT5020BLC APT5020 APT5020SLC

    Untitled

    Abstract: No abstract text available
    Text: S S D D G G 27 2 T- SO APL501J S ISOTOP 43.0A 0.12W 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APL501J E145592

    XCF02S pcb

    Abstract: XCF08PFS48 XCF32PFS48C XCF01SVO20 XCF02S XCF32P DS123 FS48 VO20 VO48
    Text: Platform Flash In-System Programmable Configuration PROMs R DS123 v2.1 November 18, 2003 Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From


    Original     		PDF DS123 XCF01S/XCF02S/XCF04S XCF08P/XCF16Pon XCF02S pcb XCF08PFS48 XCF32PFS48C XCF01SVO20 XCF02S XCF32P DS123 FS48 VO20 VO48

    APT10M09B2VFR

    Abstract: APT10M09LVFR
    Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247 APT10M09LVFR