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Microchip Technology Inc APT1002RBNG MOSFET N-CH 1000V 8A TO247AD
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DigiKey	APT1002RBNG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT1002RCN Mosfet _ CUSTOM, Projected EOL: 2049-02-05
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Microchip Technology Inc	APT1002RCN			52 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT1002RDN MOSFET MOS 4 1000 V 2 Ohm DIE, Projected EOL: 2044-04-30
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Microchip Technology Inc	APT1002RDN			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Power Technology APT1002RAN
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Quest Components	APT1002RAN		4			1 $44.8768 10 $44.8768 100 $44.8768 1000 $44.8768 10000 $44.8768	Buy Now

APT1002R Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
APT1002R4BN	Advanced Power Technology	N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1002RBN	Advanced Power Technology	N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1002RCN	Advanced Power Technology	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1002RDN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF

APT1002R Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage	Original	O-254 APT1002RCN O-254AA	PDF
Untitled Abstract: No abstract text available Text: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage	Original	O-254 APT1002RCN O-254AA	PDF
APT1002RCN Abstract: No abstract text available Text: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage	Original	O-254 APT1002RCN APT1002RCN O-254AA	PDF
1002r4bn Abstract: APT*1002R4BN APT1002R4BN 1002rbn APT1002RBN Text: D TO-247 G APT1002RBN S POWER MOS IV 1000V 7.0A 2.00Ω APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	O-247 APT1002RBN APT1002R4BN 1002RBN 1002R4BN O-247AD 1002r4bn APT*1002R4BN 1002rbn APT1002RBN	PDF
1001R6BN Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN Text: D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	O-247 APT1001R6BN APT1002R4BN 1001R6BN 1002R4BN O-247AD 1001R6BN 1002R4BN APT*1002R4BN APT1002RBN	PDF
APT1002R4BN Abstract: 2T640 Text: A dvanced P ow er Te c h n o lo g y 8 O D O APT1002RBNR APT1002R4BNR s 1000V 7.0A 2.00Q 1000V 6.5A 2.400 3 WER MOS IV'81 UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol VDSS All Ratings: T c = 2 5 °C unless otherwise specified.	OCR Scan	APT1002RBNR APT1002R4BNR O-247AD APT*1002R4BN 2T640	PDF
APT901RBN Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN	OCR Scan	000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN	PDF
902R4BN Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R Text: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN APT1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.	OCR Scan	APT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN APT1002R/902R/1002R4/902R4BN 1002r4bn APT902R	PDF
Untitled Abstract: No abstract text available Text: ADVANCED POWER T E C H N O L O G Y Tfl DE \| □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN	OCR Scan	APT1002RBN APT1002R4BN APT901R6BN APT901R9BN APT801R2BN APT801R4BN APT6060BN APT6070BN APT5550BN APT5560BN	PDF
APT902R4BN Abstract: No abstract text available Text: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' AFT1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q APT1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	AFT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN G21bc APT1002R/902R/1002R4/902R4BN APT902R4BN	PDF
APT5025AN Abstract: APT4020AN APT6040AN APT1002RAN APT1003R5AN APT3540AN APT4525AN apt5025 APT902R4AN apt902ran Text: A D V A N C E D PO W E R T E C H N O L O G Y APT PA R T NUMBER APT1001 RAN APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN	OCR Scan	0000S75 APT1001 APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT5025AN APT4020AN APT6040AN APT3540AN APT4525AN apt5025 APT902R4AN	PDF
APT100-101DN Abstract: APT50 APT6014 APT6060DN Text: A DV AN CE D POWER T ECHNOL OGY 2DE D • 0257^0^ 104 D R A IN SOURCE VO LTAG E BVDSS VOLTS APT10040D N 1000 APT1001R D N 1000 APT100-101 DN 1000 APT1002R D N 1000 AP T1003R 5D N 1000 900 APT9040D N APT901R D N 900 APT90-101 DN 900 APT902R D N 900 APT903R 5D N	OCR Scan	O-247 APT100-101DN APT50 APT6014 APT6060DN	PDF
APT1003R5DN Abstract: APT6060DN APT901RDN APT1001RDN APT1002RDN APT10040DN APT902RDN APT903R5DN APT9040DN B105 Text: AD VAN CE D f TECHNOLOGY 20E D 0257^0^ 00ÜQ274 3 UNPACKAGED D IE PRO D U CTS 104 D R A IN SOURCE VO LTAG E BVDSS VOLTS APT10040DN 1000 APT1001RD N 1000 A P T 1 00-101 DN 1000 APT1002RDN 1000 APT1003R5D N 1000 900 APT9040D N APT901RD N 900 A P T9 0- 1 01 DN	OCR Scan	APT10040DN APT1001RDN APT100-101 APT1002RDN APT1003R5DN APT9040DN APT901RDN APT90-101 APT902 APT4007DN APT6060DN APT902RDN APT903R5DN B105	PDF
APT5085AN Abstract: APT1002RAN APT4020AN APTS050AN APT8075AN APT1001 APT1001R2AN APT4030AN APT1003R5AN APT1004R2AN Text: ADVANCED APT PART NUMBER APT1 00 1 RA N APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN APT7575AN APT7590AN APT751R2AN	OCR Scan	0000E75 APT1001 APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT5085AN APT4020AN APTS050AN APT8075AN APT4030AN	PDF

1002R4CN Abstract: No abstract text available Text: AD VA N C E D POW ER T E C H N O L O G Y blE D • OEST'ìCH 0 0 0 0 7 0 5 3S1 H A V P A dvanced R o w er Te c h n o l o g y n A i<ifr-n .« r> „ POWER MOS IV™ APT1002RCN APT902RCN APT1002R4CN APT902R4CN 1000V 900V 1000V 900V 5.5A 5.5A 5.0A 5.0A	OCR Scan	APT1002RCN APT902RCN APT1002R4CN APT902R4CN 902RCN APT1002R/902R/1002R4/902R4CN APT1002R/1002R4CN O-254AA 1002R4CN	PDF
APT1002R4BN Abstract: No abstract text available Text: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 APT1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT1002RBN APT1002R4BN 1002RBN 1002R4BN APT1002R/1002R4BN O-247AD	PDF
Untitled Abstract: No abstract text available Text: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.	OCR Scan	APT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN APT1002R/902R/1002R4/902R4BN O-247AD	PDF
APT5085BN Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN	OCR Scan	0GDD27b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN O-247 APT5085BN APT501R1BN APT801R2BN APT5025BN	PDF
Untitled Abstract: No abstract text available Text: ADVANCED POWER TECHNOLOGY MTE O D M o s □ a s ? ^ D 1O ' POWER MOS IV _ oooosdg ?as mAVP A d va n c ed POWER -T-3PI-1S Te c h n o lo g y APT1002RAN 1000V 6.0A 2.00 Q APT902RAN 900V 6.0A 2.00 Q APT1002R4AN 1000V 5.5A 2.40 Q APT902R4AN 900V 5.5A 2.40 Q	OCR Scan	APT1002RAN APT902RAN APT1002R4AN APT902R4AN 902RAN 1002RAN 902R4AN 1002R4AN	PDF
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y O D APT1002RBNR 1000V 7.0A 2.000 APT1002R4BNR 1000V 6.5A 2.400 Os POWER MOS IV« UIS RATED N -C H A N N E L E N H A N CEM EN T M O D E HIGH VOLTAGE PO W ER M O SFETS All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	APT1002RBNR APT1002R4BNR APT1002R4BNR MIL-STD-750 -247AD	PDF
APT1002RBNR Abstract: No abstract text available Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT1002RBNR APT1002R4BNR APT1002RBNR APT1002R4BNR STD-750 O-247AD	PDF
APT801R2DN Abstract: APT5085DN Text: ADVANCED POWER TECHNOLOGY Tfl Dlf\| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN	OCR Scan	APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN	PDF
Untitled Abstract: No abstract text available Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN	OCR Scan	APT1001R6BN 1001R6BN O-247AD	PDF
APT40M80DN Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257 Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.	OCR Scan	APT-105 APT-106 APT-107 APT-108 APT40M80DN APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257	PDF

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APT1002R Search Results

APT1002R Price and Stock

Microchip Technology Inc APT1002RBNG

Microchip Technology Inc APT1002RCN

Microchip Technology Inc APT1002RDN

Advanced Power Technology APT1002RAN

APT1002R Datasheets (4)

APT1002R Datasheets Context Search

Untitled

Untitled

APT1002RCN

1002r4bn

1001R6BN

APT*1002R4BN

APT901RBN

902R4BN

Untitled

APT902R4BN

APT5025AN

APT100-101DN

APT1003R5DN

APT5085AN

1002R4CN

APT1002R4BN

Untitled

APT5085BN

Untitled

Untitled

APT1002RBNR

APT801R2DN

Untitled

APT40M80DN