Untitled
Abstract: No abstract text available
Text: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage
|
Original
|
PDF
|
O-254
APT1002RCN
O-254AA
|
Untitled
Abstract: No abstract text available
Text: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage
|
Original
|
PDF
|
O-254
APT1002RCN
O-254AA
|
APT1002RCN
Abstract: No abstract text available
Text: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage
|
Original
|
PDF
|
O-254
APT1002RCN
APT1002RCN
O-254AA
|
1002r4bn
Abstract: APT*1002R4BN APT1002R4BN 1002rbn APT1002RBN
Text: D TO-247 G APT1002RBN S POWER MOS IV 1000V 7.0A 2.00Ω APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
|
Original
|
PDF
|
O-247
APT1002RBN
APT1002R4BN
1002RBN
1002R4BN
O-247AD
1002r4bn
APT*1002R4BN
1002rbn
APT1002RBN
|
1001R6BN
Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN
Text: D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
|
Original
|
PDF
|
O-247
APT1001R6BN
APT1002R4BN
1001R6BN
1002R4BN
O-247AD
1001R6BN
1002R4BN
APT*1002R4BN
APT1002RBN
|
APT*1002R4BN
Abstract: 2T640
Text: A dvanced P ow er Te c h n o lo g y 8 O D O APT1002RBNR APT1002R4BNR s 1000V 7.0A 2.00Q 1000V 6.5A 2.400 3* WER MOS IV'81 UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol VDSS All Ratings: T c = 2 5 °C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT1002RBNR
APT1002R4BNR
O-247AD
APT*1002R4BN
2T640
|
APT901RBN
Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN
|
OCR Scan
|
PDF
|
000027b
APT1001RBN
APT1001R2BN
APT1002RBN
APT1002R4BN
APT1003R5BN
APT1004R2BN
APT901RBN
APT901R2BN
APT902RBN
apt4530bn
APT801R2BN
APT4030BN
APT902R4BN
APT*1002R4BN
APT3520BN
|
902R4BN
Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
Text: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN APT1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
1002r4bn
APT902R
|
Untitled
Abstract: No abstract text available
Text: ADVANCED POWER T E C H N O L O G Y Tfl DE | □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN
|
OCR Scan
|
PDF
|
APT1002RBN
APT1002R4BN
APT901R6BN
APT901R9BN
APT801R2BN
APT801R4BN
APT6060BN
APT6070BN
APT5550BN
APT5560BN
|
APT902R4BN
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' AFT1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q APT1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
AFT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
G21bc
APT1002R/902R/1002R4/902R4BN
APT902R4BN
|
APT5025AN
Abstract: APT4020AN APT6040AN APT1002RAN APT1003R5AN APT3540AN APT4525AN apt5025 APT902R4AN apt902ran
Text: A D V A N C E D PO W E R T E C H N O L O G Y APT PA R T NUMBER APT1001 RAN APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN
|
OCR Scan
|
PDF
|
0000S75
APT1001
APT1001R2AN
APT1002RAN
APT1002R4AN
APT1003R5AN
APT1004R2AN
APT901RAN
APT901R2AN
APT902RAN
APT5025AN
APT4020AN
APT6040AN
APT3540AN
APT4525AN
apt5025
APT902R4AN
|
APT100-101DN
Abstract: APT50 APT6014 APT6060DN
Text: A DV AN CE D POWER T ECHNOL OGY 2DE D • 0257^0^ 104 D R A IN SOURCE VO LTAG E BVDSS VOLTS APT10040D N 1000 APT1001R D N 1000 APT100-101 DN 1000 APT1002R D N 1000 AP T1003R 5D N 1000 900 APT9040D N APT901R D N 900 APT90-101 DN 900 APT902R D N 900 APT903R 5D N
|
OCR Scan
|
PDF
|
O-247
APT100-101DN
APT50
APT6014
APT6060DN
|
APT1003R5DN
Abstract: APT6060DN APT901RDN APT1001RDN APT1002RDN APT10040DN APT902RDN APT903R5DN APT9040DN B105
Text: AD VAN CE D f TECHNOLOGY 20E D 0257^0^ 00ÜQ274 3 UNPACKAGED D IE PRO D U CTS 104 D R A IN SOURCE VO LTAG E BVDSS VOLTS APT10040DN 1000 APT1001RD N 1000 A P T 1 00-101 DN 1000 APT1002RDN 1000 APT1003R5D N 1000 900 APT9040D N APT901RD N 900 A P T9 0- 1 01 DN
|
OCR Scan
|
PDF
|
APT10040DN
APT1001RDN
APT100-101
APT1002RDN
APT1003R5DN
APT9040DN
APT901RDN
APT90-101
APT902
APT4007DN
APT6060DN
APT902RDN
APT903R5DN
B105
|
APT5085AN
Abstract: APT1002RAN APT4020AN APTS050AN APT8075AN APT1001 APT1001R2AN APT4030AN APT1003R5AN APT1004R2AN
Text: ADVANCED APT PART NUMBER APT1 00 1 RA N APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN APT7575AN APT7590AN APT751R2AN
|
OCR Scan
|
PDF
|
0000E75
APT1001
APT1001R2AN
APT1002RAN
APT1002R4AN
APT1003R5AN
APT1004R2AN
APT901RAN
APT901R2AN
APT902RAN
APT5085AN
APT4020AN
APTS050AN
APT8075AN
APT4030AN
|
|
|
1002R4CN
Abstract: No abstract text available
Text: AD VA N C E D POW ER T E C H N O L O G Y blE D • OEST'ìCH 0 0 0 0 7 0 5 3S1 H A V P A dvanced R o w er Te c h n o l o g y n A i<ifr-n .« r> „ POWER MOS IV™ APT1002RCN APT902RCN APT1002R4CN APT902R4CN 1000V 900V 1000V 900V 5.5A 5.5A 5.0A 5.0A
|
OCR Scan
|
PDF
|
APT1002RCN
APT902RCN
APT1002R4CN
APT902R4CN
902RCN
APT1002R/902R/1002R4/902R4CN
APT1002R/1002R4CN
O-254AA
1002R4CN
|
APT1002R4BN
Abstract: No abstract text available
Text: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 APT1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT1002RBN
APT1002R4BN
1002RBN
1002R4BN
APT1002R/1002R4BN
O-247AD
|
Untitled
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
O-247AD
|
APT5085BN
Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN
|
OCR Scan
|
PDF
|
0GDD27b
APT1001RBN
APT1001R2BN
APT1002RBN
APT1002R4BN
O-247
APT5085BN
APT501R1BN
APT801R2BN
APT5025BN
|
Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY MTE O D M o s □ a s ? ^ D 1O ' POWER MOS IV _ oooosdg ?as mAVP A d va n c ed POWER -T-3PI-1S Te c h n o lo g y APT1002RAN 1000V 6.0A 2.00 Q APT902RAN 900V 6.0A 2.00 Q APT1002R4AN 1000V 5.5A 2.40 Q APT902R4AN 900V 5.5A 2.40 Q
|
OCR Scan
|
PDF
|
APT1002RAN
APT902RAN
APT1002R4AN
APT902R4AN
902RAN
1002RAN
902R4AN
1002R4AN
|
Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D APT1002RBNR 1000V 7.0A 2.000 APT1002R4BNR 1000V 6.5A 2.400 Os POWER MOS IV« UIS RATED N -C H A N N E L E N H A N CEM EN T M O D E HIGH VOLTAGE PO W ER M O SFETS All Ratings: T c = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT1002RBNR
APT1002R4BNR
APT1002R4BNR
MIL-STD-750
-247AD
|
APT1002RBNR
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT1002RBNR
APT1002R4BNR
APT1002RBNR
APT1002R4BNR
STD-750
O-247AD
|
APT801R2DN
Abstract: APT5085DN
Text: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN
|
OCR Scan
|
PDF
|
APT1001RCN
APT1001R2CN
APT9090CN
APT901RCN
APT8075CN
APT8090CN
APT6035CN
APT6040CN
APT5530CN
APT5532CN
APT801R2DN
APT5085DN
|
Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN
|
OCR Scan
|
PDF
|
APT1001R6BN
1001R6BN
O-247AD
|
APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
|
OCR Scan
|
PDF
|
APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
|
