tesec DV240
Abstract: AN1027 AN-569 DV240 NDS9956
Text: AN1027 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus
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AN1027
tesec DV240
AN1027
AN-569
DV240
NDS9956
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V1F diode
Abstract: PNX2000 T010 T020 volume i2c i2c graphic equalizer EPICS-7
Text: PNX2000 Register Summary List AN10276_1 Audio Video Input Processor Rev. 01 — 15 December 2003 PNX2000 RSL Philips Semiconductors Audio Video Input Processor RSL Contents Aperture Map PNX2000 AUDIO_DSP Register Summary AUDIO_DSP Registers 0x4 0x8 0xC 0x10
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PNX2000
AN10276
PNX2000
REG05
25sses,
V1F diode
T010
T020
volume i2c
i2c graphic equalizer
EPICS-7
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AN10273
Abstract: AN10 BUK764R0-55B 681688
Text: AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Rev. 02 — 27 March 2009 Application note Document information Info Content Keywords Power MOSFET, single-shot, avalanche, ruggedness, safe operating condition Abstract Power MOSFETs are normally measured based on single-shot
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AN10273
AN10273
AN10
BUK764R0-55B
681688
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FZB-20-15-1661v02
Abstract: pcb lcd display connector EMC PCB Layout "LCD DRIVER"
Text: Philips Semiconductors AN10272-01 Application Note: LCD driver and EMC Application Note LCD driver and EMC AN10272-01 Rev. 01 File under Philips Semiconductors Application Notes FZB-20-15-1661v02 1 August 2002 Philips Semiconductors AN10272-01 Application Note: LCD driver and EMC
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AN10272-01
FZB-20-15-1661v02
FZB-20-15-1661-V02
FZB-20-15-1661v02
pcb lcd display connector
EMC PCB Layout
"LCD DRIVER"
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CA2600
Abstract: 601B AN1027 CA2200 overlay transistor metallization
Text: Order this document by AN1027/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1027 RELIABILITY/PERFORMANCE ASPECTS OF CATV AMPLIFIER DESIGN Prepared by: Michael D. McCombs “Reliability is the probability of a device performing its purpose adequately for the period of time
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AN1027/D
AN1027
CA2600
601B
AN1027
CA2200
overlay transistor
metallization
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failure rate Freescale
Abstract: ca2200 CA2600 MOTOROLA catv hybrid 601B AN1027 james bond "failure rate" Freescale
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1027/D SEMICONDUCTOR APPLICATION NOTE AN1027 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Reliability/Performance Aspects of CATV
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AN1027/D
AN1027
failure rate Freescale
ca2200
CA2600
MOTOROLA catv hybrid
601B
AN1027
james bond
"failure rate" Freescale
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AN10273
Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
Text: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.
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AN10273
philips 170c
avalanche
inductor 2mH
mosfet pp
BUK764R0-55B
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Untitled
Abstract: No abstract text available
Text: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
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BUK762R0-40C
BUK762R0-40C
771-BUK762R0-40C
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Untitled
Abstract: No abstract text available
Text: Agilent Radiometrically Tested AlInGaP II LED Lamps for Sensor-Based Applications Data Sheet SunPower Series Precision Optical Performance HLMP-ED80-xxxxx Description Radiometrically Tested Precision Optical Performance AlInGaP II aluminum indium gallium
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HLMP-ED80-xxxxx
5989-2895EN
5989-4366EN
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BUK9Y14-40B
Abstract: No abstract text available
Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
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BUK9Y14-40B
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BUK75
Abstract: BUK754R3-75C BUK7E4R3-75C
Text: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
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BUK754R3-75C;
BUK7E4R3-75C
7E4R3-75C
BUK75
BUK754R3-75C
BUK7E4R3-75C
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55A4
Abstract: BUK98150-55A SC-73
Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK98150-55A
BUK98150-55A
55A4
SC-73
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BUK7226-75A
Abstract: No abstract text available
Text: BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
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BUK7226-75A
BUK7226-75A
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BUK75
Abstract: BUK753R4-30B BUK763R4-30B
Text: BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS technology.
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BUK753R4-30B;
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BUK75
BUK753R4-30B
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transistor fet 3884
Abstract: MS-013 SO20 AN10273
Text: BUK9MGP-55PTS Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MGP-55PTS
BUK9MGP-55PTS
transistor fet 3884
MS-013
SO20
AN10273
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BUK7Y13-40B
Abstract: automotive abs 10S100
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y13-40B
BUK7Y13-40B
automotive abs
10S100
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BUK7880-55A
Abstract: SC-73
Text: BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK7880-55A
BUK7880-55A
SC-73
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BUK75
Abstract: BUK754R0-55B BUK764R0-55B
Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK754R0-55B;
BUK764R0-55B
BUK75
BUK754R0-55B
BUK764R0-55B
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PSMN050-80PS
Abstract: No abstract text available
Text: PSMN050-80PS N-channel 80 V 50 mΩ standard level MOSFET Rev. 01 — 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN050-80PS
PSMN050-80PS
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Untitled
Abstract: No abstract text available
Text: HLMP-Yxxx T-1 3 mm GaP/GaAsP LED Lamps Data Sheet Description Features This family of T-1 lamps is widely used in general purpose indicator and back lighting applications. The optical design is balanced to yield superior light output and wide viewing angles. Several intensity choices are available in each
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AV02-2801EN
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Untitled
Abstract: No abstract text available
Text: HLMP-4100/4101 T-13/4 5 mm Double Heterojunction AlGaAs Very High Intensity Red LED Lamps Data Sheet Description Features These solid state LED lamps utilize newly developed double heterojunction (DH) AlGaAs/GaAs material technology. This LED material has outstanding light output efficiency
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HLMP-4100/4101
T-13/4
AV02-1560EN
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Electrohydraulic Power Steering
Abstract: A240D
Text: BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK7E1R9-40E
OT226
Electrohydraulic Power Steering
A240D
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 — 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK768R1-40E
OT404
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Untitled
Abstract: No abstract text available
Text: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK9637-100E
OT404
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