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    TE Connectivity 6368168-8

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    681688 Datasheets Context Search

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    AN10273

    Abstract: AN10 BUK764R0-55B 681688
    Text: AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Rev. 02 — 27 March 2009 Application note Document information Info Content Keywords Power MOSFET, single-shot, avalanche, ruggedness, safe operating condition Abstract Power MOSFETs are normally measured based on single-shot


    Original     		PDF AN10273 AN10273 AN10 BUK764R0-55B 681688

    AN10273

    Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
    Text: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.


    Original     		PDF AN10273 philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B