AN10273
Abstract: AN10 BUK764R0-55B 681688
Text: AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Rev. 02 — 27 March 2009 Application note Document information Info Content Keywords Power MOSFET, single-shot, avalanche, ruggedness, safe operating condition Abstract Power MOSFETs are normally measured based on single-shot
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AN10273
AN10273
AN10
BUK764R0-55B
681688
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AN10273
Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
Text: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.
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AN10273
philips 170c
avalanche
inductor 2mH
mosfet pp
BUK764R0-55B
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Untitled
Abstract: No abstract text available
Text: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
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BUK762R0-40C
BUK762R0-40C
771-BUK762R0-40C
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BUK9Y14-40B
Abstract: No abstract text available
Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
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BUK9Y14-40B
BUK9Y14-40B
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BUK75
Abstract: BUK754R3-75C BUK7E4R3-75C
Text: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
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BUK754R3-75C;
BUK7E4R3-75C
7E4R3-75C
BUK75
BUK754R3-75C
BUK7E4R3-75C
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55A4
Abstract: BUK98150-55A SC-73
Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK98150-55A
BUK98150-55A
55A4
SC-73
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BUK7226-75A
Abstract: No abstract text available
Text: BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
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BUK7226-75A
BUK7226-75A
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BUK75
Abstract: BUK753R4-30B BUK763R4-30B
Text: BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS technology.
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BUK753R4-30B;
BUK763R4-30B
BUK75
BUK753R4-30B
BUK763R4-30B
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Untitled
Abstract: No abstract text available
Text: BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed
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BUK725R0-40C
BUK725R0-40C
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transistor fet 3884
Abstract: MS-013 SO20 AN10273
Text: BUK9MGP-55PTS Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MGP-55PTS
BUK9MGP-55PTS
transistor fet 3884
MS-013
SO20
AN10273
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BUK7Y13-40B
Abstract: automotive abs 10S100
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y13-40B
BUK7Y13-40B
automotive abs
10S100
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BUK7880-55A
Abstract: SC-73
Text: BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK7880-55A
BUK7880-55A
SC-73
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BUK75
Abstract: BUK754R0-55B BUK764R0-55B
Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK754R0-55B;
BUK764R0-55B
BUK75
BUK754R0-55B
BUK764R0-55B
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PSMN050-80PS
Abstract: No abstract text available
Text: PSMN050-80PS N-channel 80 V 50 mΩ standard level MOSFET Rev. 01 — 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN050-80PS
PSMN050-80PS
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 — 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK768R1-40E
OT404
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Untitled
Abstract: No abstract text available
Text: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK9637-100E
OT404
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MIFARE DESFire
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K29-100E
LFPAK56D
MIFARE DESFire
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915055
Abstract: No abstract text available
Text: SO T2 23 BUK98150-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK98150-55A
915055
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buk6e2r3-40c
Abstract: No abstract text available
Text: BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6E2R3-40C
buk6e2r3-40c
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buk6207-55c
Abstract: buk6207
Text: BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6207-55C
buk6207-55c
buk6207
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BR 5610
Abstract: Electro-Hydraulic buk6507 buk6507-75c
Text: BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6507-75C
BR 5610
Electro-Hydraulic
buk6507
buk6507-75c
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Untitled
Abstract: No abstract text available
Text: BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK653R7-30C
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BUK6217-55C
Abstract: No abstract text available
Text: BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6217-55C
BUK6217-55C
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of fet
Abstract: No abstract text available
Text: BUK6610-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6610-75C
of fet
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