Part Marking STMicroelectronics flash memory
Abstract: Diode Marking ef M29W040 M39432 ST EF 017
Text: M39432 Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM • Multiple Memories on a Single Chip: – 4 Mbit Flash Memory organised as 8 sectors – 256 Kbit EEPROM – 64 Byte One Time Programmable Memory ■ CONCURRENT Mode (Read Flash while
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M39432
TSOP40
Part Marking STMicroelectronics flash memory
Diode Marking ef
M29W040
M39432
ST EF 017
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JESD22-A112-A
Abstract: HR-10 af55 c100nf M29W040 M39432 QREE9801 AF4F-M29V040
Text: QREE9801 QUALIFICATION REPORT M39432 T6: FLASH+ Multiple Memory in TSOP40 The purpose of this document is to present the summary of the reliability tests performed to qualify the M39432 device. This multiple-memory device combines a Flash memory and an EEPROM on a single die,
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QREE9801
M39432
TSOP40
M39432
JESD22-A112-A
HR-10
af55
c100nf
M29W040
QREE9801
AF4F-M29V040
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M29W040
Abstract: M39432 AI02028
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM)
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M39432
120ns
M39432
M29W040
AI02028
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TSOP32 FOOTPRINT
Abstract: disadvantages of microcontroller AN931 AN996 AN997 AN998 AN999 M29W040 M39432 TSOP32
Text: AN997 APPLICATION NOTE M39432: a FLASH+ Multiple Memory Device The new FLASH+ technology, from ST, allows Flash memory and EEPROM to be fabricated together on a single die. Significant cost, speed and power consumption advantages are gained over designs that previously used two separate memories, or that previously used software to emulate the effect of having the
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AN997
M39432:
M39432
TSOP32 FOOTPRINT
disadvantages of microcontroller
AN931
AN996
AN997
AN998
AN999
M29W040
TSOP32
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M29W040
Abstract: M39432 4Mbit eeprom
Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while
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M39432
120ns
M39432
EEPR0-A18
120ns
150ns
200ns
250ns
TSOP40
M29W040
4Mbit eeprom
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M29W040
Abstract: M39432
Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while
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M39432
120ns
M39432
M29W040
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4mbit eprom
Abstract: 4Mbit eeprom 4mbit otp M29W040 M39432 AI01946
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while
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M39432
120ns
M39432
120ns
150ns
200ns
250ns
TSOP40
AI01947
4mbit eprom
4Mbit eeprom
4mbit otp
M29W040
AI01946
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disadvantages of microcontroller
Abstract: advantages of microcontroller TSOP32 FOOTPRINT eeprom parallel st TSOP32 pad AN931 AN996 AN997 AN998 AN999
Text: AN997 APPLICATION NOTE M39432: a FLASH+ Multiple Memory Device The new FLASH+ technology, from ST, allows Flash memory and EEPROM to be fabricated together on a single die. Significant cost, speed and power consumption advantages are gained over designs that previously used two separate memories, or that previously used software to emulate the effect of having the
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AN997
M39432:
M39432
disadvantages of microcontroller
advantages of microcontroller
TSOP32 FOOTPRINT
eeprom parallel st
TSOP32 pad
AN931
AN996
AN997
AN998
AN999
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