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    Part Marking STMicroelectronics flash memory

    Abstract: Diode Marking ef M29W040 M39432 ST EF 017
    Text: M39432 Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM • Multiple Memories on a Single Chip: – 4 Mbit Flash Memory organised as 8 sectors – 256 Kbit EEPROM – 64 Byte One Time Programmable Memory ■ CONCURRENT Mode (Read Flash while


    Original     		PDF M39432 TSOP40 Part Marking STMicroelectronics flash memory Diode Marking ef M29W040 M39432 ST EF 017

    M29W040

    Abstract: M39432 AI02028
    Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM)


    Original     		PDF M39432 120ns M39432 M29W040 AI02028

    M29W040

    Abstract: M39432
    Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while


    Original     		PDF M39432 120ns M39432 M29W040