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    TSOP40 Price and Stock

    Vishay Semiconductors TSOP4038ST1

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    Aries Electronics Inc LCQT-TSOP40

    SOCKET ADAPTER TSOP TO 40DIP
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    DigiKey LCQT-TSOP40 Tube 72
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    Mouser Electronics LCQT-TSOP40 23
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    Onlinecomponents.com LCQT-TSOP40
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    Aries Electronics Inc LCQT-TSOP40-1

    SOCKET ADAPTER TSOP TO 40DIP
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    DigiKey LCQT-TSOP40-1 Tube 72
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    Mouser Electronics LCQT-TSOP40-1
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    Onlinecomponents.com LCQT-TSOP40-1
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    Vishay Intertechnologies TSOP4038

    Ir Receiver, 30M, 950Nm, Through Hole; Carrier Frequency:38Khz; Transmission Range:30M; Directivity:45°; Supply Voltage Max:5.5V; Supply Voltage Min:2.7V; Operating Temperature Min:-25°C; Operating Temperature Max:85°C Rohs Compliant: Yes |Vishay TSOP4038
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    Newark TSOP4038 Bulk 2,160
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    Bristol Electronics TSOP4038 174
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    Dataman LP48-TSOP-40S

    |Dataman LP48-TSOP-40S
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    Newark LP48-TSOP-40S Bulk 1
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    TSOP40 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSOP40A STMicroelectronics TSOP40A FOR MEMORY PRODUCTS Original PDF
    TSOP40B STMicroelectronics TSOP40B FOR MEMORY PRODUCTS Original PDF

    TSOP40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IR Receiver Module

    Abstract: TSOP4038
    Text: TSOP4038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 • Supply voltage: 2.7 V to 5.5 V


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    TSOP4038 2002/95/EC 2002/96/EC TSOP4038 18-Jul-08 IR Receiver Module PDF

    TSOP4038

    Abstract: ir receiver extended range ir receiver module TSAL6200
    Text: TSOP4038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals e3 • Shielding against EMI • Supply voltage: 2.7 V to 5.5 V


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    TSOP4038 2002/95/EC 2002/96/EC TSOP4038 18-Jul-08 ir receiver extended range ir receiver module TSAL6200 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


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    M28F410/420, M28F411/421 T6-U10: TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially


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    M28F102 TSOP40 120ns PDF

    STMicroelectronics marking code date

    Abstract: CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/578 M50FW, M50LPW, M50FLW Firmware Hub and Low Pin Count Product Families, TSOP40 Environmental Friendly Package and Assembly Location Change WHAT IS THE CHANGE? The present PCN replaces and upgrades PCN MPG/EE/0086 / CPCN MPG/EEP/04/450.


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    MPG-EEP/04/578 M50FW, M50LPW, M50FLW TSOP40 MPG/EE/0086 MPG/EEP/04/450. STMicroelectronics marking code date CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING PDF

    M28F102

    Abstract: PLCC44 QRFL9810 PLCC44 package
    Text: QRFL9810 QUALIFICATION REPORT M28F102 T5-U20: 1 Mbit x16 Dual Supply Flash Memory INTRODUCTION The M28F102 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 64 KByte of 16 bits each. It is offered in TSOP40 and PLCC44 packages. The M28F102 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%


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    QRFL9810 M28F102 T5-U20: V/12V) TSOP40 PLCC44 T5-U20 QRFL9810 PLCC44 package PDF

    JESD22-A112-A

    Abstract: HR-10 af55 c100nf M29W040 M39432 QREE9801 AF4F-M29V040
    Text: QREE9801 QUALIFICATION REPORT M39432 T6: FLASH+ Multiple Memory in TSOP40 The purpose of this document is to present the summary of the reliability tests performed to qualify the M39432 device. This multiple-memory device combines a Flash memory and an EEPROM on a single die,


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    QREE9801 M39432 TSOP40 M39432 JESD22-A112-A HR-10 af55 c100nf M29W040 QREE9801 AF4F-M29V040 PDF

    m29f102

    Abstract: M29F200 PLCC44 QRFL9806
    Text: QRFL9806 QUALIFICATION REPORT M29F102 and M29F105 T6-U20: 1 Mbit x16 Single Supply Flash Memory INTRODUCTION The M29F102 and M29F105 are a 1 Mbit Single Supply (5V) Flash memories organized as 64 KWord of 16 bits each. The M29F102 is offered in PLCC44 and TSOP40 packages; the M29F105 is offered in


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    QRFL9806 M29F102 M29F105 T6-U20: PLCC44 TSOP40 M29F200 QRFL9806 PDF

    TSOP40

    Abstract: M29W004 M29W400 QR120
    Text: QUALIFICATION REPORT M29W004 T6-U20: 4Mb 512K x 8 SINGLE SUPPLY FLASH MEMORY in TSOP40 INTRODUCTION The M29W004 is a 4Mb Low Voltage Single Supply (2.7-3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in TSOP40 package. It can be programmed and erased in-system or in standard


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    M29W004 T6-U20: TSOP40 TSOP40 T6-U20 100ns M29W400 QR120 PDF

    1N914

    Abstract: M28F411
    Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks


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    M28F411 M28F421 TSOP40 20/25mA M28F411 M28F42tent 1N914 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


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    M28F410/420, M28F411/421 TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16 PDF

    M28V411

    Abstract: M28V421
    Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks


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    M28V411 M28V421 TSOP40 120ns M28V41patent M28V411 M28V421 PDF

    CDIP32

    Abstract: M28F411 M28W431 QRFL9802
    Text: QRFL9802 QUALIFICATION REPORT M28W431 T6-U20: 4 Mb x8 Flash Memory in TSOP40, Catania M5 Diffusion Line INTRODUCTION The M28W431 is a 4 Mb Low Voltage Dual Supply (3/12V) Boot Block Flash memory organised as 512K bytes of 8 bits each. It is manufactured with the ST Microelectronics advanced CMOS 0.6 micron T6-U20


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    QRFL9802 M28W431 T6-U20: TSOP40, 3/12V) T6-U20 TSOP40 10x20 CDIP32 M28F411 QRFL9802 PDF

    QR107

    Abstract: TSOP40 Flash M28F101 M28F102 PLCC44
    Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially


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    M28F102 T5-U20 TSOP40 PLCC44 T5-U20 100ns TSOP40 PLCC44 QR107 TSOP40 Flash M28F101 PDF

    30n40

    Abstract: No abstract text available
    Text: M 28W 411 M 28W 421 VERY LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY / T 7 S C S -T H O M S O N ^ 7 # » HD(g (ôai TO©iD(gl PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­


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    TSOP40 150ns 30n40 PDF

    Untitled

    Abstract: No abstract text available
    Text: n r z *¿7 i. M28F411 M28F421 S C S -T H O M S O N R 0 ö » ilL I g fM O ( g i CMOS 4 Megabit (x 8, 7 Blocks FLASH MEMORY ADVANCE DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


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    M28F411 M28F421 TSOP40 20/25mATypical M28F411, PDF

    Untitled

    Abstract: No abstract text available
    Text: 57. SGS-THOMSON M28F841 •LI 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 5 V ± 0.5V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


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    M28F841 TSOP40 100ns TSOP40 A0-A19 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE


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    M28F841 TSOP40 100ns 8F841 Q0b6713 PDF

    XX20H

    Abstract: I01498 A19D A13D
    Text: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


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    M28V841 TSOP40 100ns XX20H I01498 A19D A13D PDF

    f421

    Abstract: v421 6080ns
    Text: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)


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    M28F411, M28V411, TSOP40 r------------1196 f421 v421 6080ns PDF

    M28F211

    Abstract: M28F221
    Text: M28F211 M28F221 SGS-THOMSON M g [Î3 iH iO T ® K !]r 2 Megabit (x 8, Block Erase FLASH MEMORY P R E L IM IN A R Y D A TA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


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    M28F211 M28F221 TSOP40 20/25mATypical M28F221 71B1B37 M28F211, PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . M28F211 M28F221 SGS-IHOMSON EilD @^ [ÌlLiCT^ K!lD(gi 2 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


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    M28F211 M28F221 TSOP40 M28F238 M28F211, PDF

    Untitled

    Abstract: No abstract text available
    Text: M28F411 M28F421 SGS-THOMSON ìl i 4 Megabit x 8, Block Erase FLASH MEMORY PRELIM INARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­ tection


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    M28F411 M28F421 TSOP40 20/25mA M28F421 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


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    M28V841 TSOP40 100ns PDF