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    Memory

    Abstract: FTS8L32512V
    Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


    Original     		PDF FTS8L32512V 512Kx32 FTS8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, FTI8K32512V Memory

    WED8L24257V

    Abstract: DSP5630X
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X

    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V,

    WED8L24513V

    Abstract: No abstract text available
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL

    MO-47AE

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31

    EDI8L32512V-AC

    Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
    Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8L32512V-AC EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V,

    EDI8L32512V-AC

    Abstract: 8L32512V
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V

    ADSP-2153x

    Abstract: DK2190 pld connector DSP JTAG 74HC374s ADDR15 PLD 22V10 chn a5 ADSP-218X internet audio player
    Text: DSP System Memories A Complete System Memory Solution for Analog Devices’ General Purpose DSPs Jan 2002 STMicroelectronics Bootloading DSPs DSP Serial EEPROM SPI ACCESS Host MCU Host Interface SRAM DMA ACCESS 8-bit PARALLEL FLASH BOOT MEMORY DSP CORE Multiple ways to bootload on-chip SRAM at start-up or during


    Original     		PDF PTPS0202 aDSM2150 ADSP-2153x DK2190 pld connector DSP JTAG 74HC374s ADDR15 PLD 22V10 chn a5 ADSP-218X internet audio player

    Untitled

    Abstract: No abstract text available
    Text: SHARC Processor SUMMARY KEY FEATURES—PROCESSOR CORE High performance signal processor for communications, graphics and imaging applications Super Harvard Architecture 4 independent buses for dual data fetch, instruction fetch,


    Original     		PDF 1062/ADSP-21062L/ADSP-21060C/ADSP-21060LC 32-bit 240-lead 225-ball execut240-2 SP-240-2

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31

    ADSP 21 XXX Sharc processor

    Abstract: ADSP-21060 reference manual tms 1601 ADSP-21060 ADSP-21062 sharc iir filter SP-240-2 code marking h06 ADSP-21060 REV E M1543
    Text: a SHARC Processor SUMMARY KEY FEATURES—PROCESSOR CORE High performance signal processor for communications, graphics and imaging applications Super Harvard Architecture Four independent buses for dual data fetch, instruction


    Original     		PDF 1062/ADSP-21062L/ADSP-21060C/ADSP-21060LC 32-Bit 240-lead 225-ball D00167-0-11/07 ADSP 21 XXX Sharc processor ADSP-21060 reference manual tms 1601 ADSP-21060 ADSP-21062 sharc iir filter SP-240-2 code marking h06 ADSP-21060 REV E M1543

    TA248

    Abstract: ADSP-2153x 20L8 74HC374 74XX ADSP-TS101S DSM2150F5 ADSP-218XM
    Text: TA248 TECHNICAL ARTICLE DSM2150F5 – Not Just a “Boot Load” Memory Bryan Hahn, Programmable System Memories Division STMicroelectronics, San Jose The simplicity and flexibility of using the DSM2150F4, offers DSP system designers a complete turnkey system memory solution that


    Original     		PDF TA248 DSM2150F5 DSM2150F4, DSM2150F5 16-bit 32-bit TA248 ADSP-2153x 20L8 74HC374 74XX ADSP-TS101S ADSP-218XM

    WED8L24513V

    Abstract: 2106XL
    Text: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs


    Original     		PDF WED8L24513V 512Kx24 512Kx24 14mmx22mm MO-163) WED8L24513VxxBC 512Kx8 2106XL WED8L24513V

    EE-160

    Abstract: EE160 design book ADSP-21062 ADSP-21062L ADSP21160 ADSP-21160 ADSP-21160M 0x0004000
    Text: a Engineer To Engineer Note EE-160 Technical Notes on using Analog Devices’ DSP components and development tools Phone: 800 ANALOG-D, FAX: (781) 461-3010, EMAIL: dsp.support@analog.com, FTP: ftp.analog.com, WEB: www.analog.com/dsp Examining ADSP-21160 Link Port


    Original     		PDF EE-160 ADSP-21160 ADSP-2106x ADSP-21160 ADSP-21062 32-bit 21160M 21062L EE-160 EE160 design book ADSP-21062L ADSP21160 ADSP-21160M 0x0004000

    DSP5630x

    Abstract: p 602 EDI8L24129V
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V, DSP5630x p 602 EDI8L24129V

    ADSP-21060L

    Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
    Text: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		PDF EDI8F32512V 512Kx32 EDI8F32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, ADSP-21060L ADSP-21062L EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL

    Untitled

    Abstract: No abstract text available
    Text: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V,

    Untitled

    Abstract: No abstract text available
    Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


    Original     		PDF FTS8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 MO-47AE FTS8L32512V

    EDI8L32512V25AI

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 MO-47AE EDI8L32512V EDI8L32512V25AI

    TCA 875

    Abstract: TCA600 ADSP-21060 ADSP-21060C ADSP-21060L ADSP-21060LC ADSP-21062 ADSP-21062L VIH22
    Text: SHARC Processor SUMMARY KEY FEATURES—PROCESSOR CORE High performance signal processor for communications, graphics and imaging applications Super Harvard Architecture 4 independent buses for dual data fetch, instruction fetch,


    Original     		PDF 1062/ADSP-21062L/ADSP-21060C/ADSP-21060LC 32-bit 240-lead 225-ball QS-240-1B, QS-240-2B) TCA 875 TCA600 ADSP-21060 ADSP-21060C ADSP-21060L ADSP-21060LC ADSP-21062 ADSP-21062L VIH22

    CYM8301BV33

    Abstract: DSP5630X
    Text: CYM8301BV33 512K x 24 Static RAM Module Features • • • • • • • High-density 12-Megabit SRAM module Access time: 10 ns Single 3.3V power supply Low active power 1000 W max. TTL-compatible inputs and outputs Available in standard 119-ball BGA


    Original     		PDF CYM8301BV33 12-Megabit 119-ball CYM8301BV33 12-Megabit DSP5630X ADSP2106XL.

    7 k 3456

    Abstract: WED8L24513V
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL 7 k 3456

    ADSP2106XL

    Abstract: No abstract text available
    Text: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,


    OCR Scan     		PDF EDI8L32512V 512Kx32SftAMModuk 512KX32CMOSHigh EDI8L32512V sTMS320LC31 EDI8L32256V ECN8L32512V ADSP2106XL