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    WED8L24513V

    Abstract: No abstract text available
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL

    Untitled

    Abstract: No abstract text available
    Text: WED8L24514V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns


    Original     		PDF WED8L24514V 512Kx24 512Kx24 WED8L24514VxxBC 512Kx8 WED8L24514V DSP5630x MO-163 WED8L24514V12BI WED8L24514V15BI

    WED8L24513V

    Abstract: 2106XL
    Text: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs


    Original     		PDF WED8L24513V 512Kx24 512Kx24 14mmx22mm MO-163) WED8L24513VxxBC 512Kx8 2106XL WED8L24513V

    512kx8

    Abstract: No abstract text available
    Text: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single


    Original     		PDF WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630xTM 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC 512kx8

    5630x

    Abstract: No abstract text available
    Text: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit


    Original     		PDF EDI8L24512V 512Kx24 5630x EDI8L24512V DSP5630x EDI8L24512V12AC EDI8L24512V15AC EDI8L24512V17AC 5630x

    Untitled

    Abstract: No abstract text available
    Text: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630x 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC

    ames 5

    Abstract: WED8L24514V wed8l24514
    Text: WED8L24514V Asynchronous SR AM, 3.3V SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static n Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24


    Original     		PDF WED8L24514V 512Kx24 512Kx24 WED8L24514VxxBC 512Kx8 WED8L24514V DSP5630x WED8L24514V10BC WED8L24514V12BC ames 5 wed8l24514

    7 k 3456

    Abstract: WED8L24513V
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL 7 k 3456

    Untitled

    Abstract: No abstract text available
    Text: 1.5Mx8/512Kx24, 20 - 45ns, STACK 30A154-03 A 12 Megabit High Speed CMOS SRAM DPS512X24MFn3 PRELIMINARY DESCRIPTION: SLCC Stack The DPS512X24MFn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .


    Original     		PDF 5Mx8/512Kx24, 30A154-03 DPS512X24MFn3 DPS512X24MFn3 12-Megabits 500mV

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION „ 512Kx24 bit CMOS Static „ Random Access Memory Array The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer


    Original     		PDF 512Kx24 512Kx24 MO-163) 14mmx22mm WED8L24513V WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106XL

    DSP56000

    Abstract: DSP56300 DSP56301 DSP56302 DSP56303 DSP56303PV80 102AAA 5782.00 DSP56000 APR
    Text: MOTOROLA Order by APR 26/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note by Phil Brewer 1 Introduction This application note describes how to interface Flash memory to Motorola’s DSP56300 family of digital signal processors (DSPs). This document is a supplement to the


    Original     		PDF DSP56300 24-Bit Office141 DSP56000 DSP56301 DSP56302 DSP56303 DSP56303PV80 102AAA 5782.00 DSP56000 APR

    transistor DA3 309

    Abstract: APR26 DSP56300 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM
    Text: Freescale Semiconductor Application Note Interfacing Flash Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface Flash memory to the DSP56300 family of DSPs. This document is a supplement to the DSP56300 24-Bit Digital Signal Processor


    Original     		PDF DSP56300 24-Bit DSP56301, DSP56303 transistor DA3 309 APR26 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM

    motorola linear databook

    Abstract: small signal transistor MOTOROLA DATABOOK BCR 133 Motorola DSP56300 16 bit processor schematic motorola cmos databook motorola handbook transistor DA3 309 DSP56000 DSP56301
    Text: Freescale Semiconductor, Inc. MOTOROLA Order by APR 26/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note Freescale Semiconductor, Inc. by Phil Brewer 1 Introduction This application note describes how to interface Flash memory to Motorola’s DSP56300 family of digital signal


    Original     		PDF DSP56300 24-Bit Office141 motorola linear databook small signal transistor MOTOROLA DATABOOK BCR 133 Motorola 16 bit processor schematic motorola cmos databook motorola handbook transistor DA3 309 DSP56000 DSP56301

    0d108

    Abstract: DSP56300 APR26 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM
    Text: Freescale Semiconductor Application Note APR26 Rev. 1, 10/2005 Interfacing Flash Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface Flash memory to the DSP56300 family of DSPs. This document is a


    Original     		PDF APR26 DSP56300 24-Bit 0d108 APR26 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM

    DSP5630X

    Abstract: No abstract text available
    Text: K EDI8L24512V X 512KX24 SRAMModule E lfC nO M C DE96N1 NC Preliminary 512KX24 CMOSHigh Speed Static RAM Features 512KX24 bit CMOS Static The EDI8L24512V is a high speed, 3.3V, 12 megabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available with access times of 12,


    OCR Scan     		PDF DE96N1 EDI8L24512V 512KX24 5630x EDI8L24512V DSP5630x E08L24512V DSP5630X

    SP5630

    Abstract: No abstract text available
    Text: ^EDI ED I8L24512V 512KX24 SRAM Module ELECTRONIC DESIGNS, INC Preliminary 512KX24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available w ith access tim es of 12,


    OCR Scan     		PDF I8L24512V 512KX24 I8L24512V 5630x ca-40 EDI8L24512V15AC EDI8L24512V17AC EDI8L24512V20AI SP5630

    5630x

    Abstract: 512Kx2
    Text: m E D I8 L 2 4 5 1 2 V x 512Kx24 SRAM Module ELECTRONIC DESIGNS. INC Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • SRAM. The device is available w ith access tim es of 12,


    OCR Scan     		PDF 512Kx24 5630x M0-47AE EDI8L24512V EDI8L24512V -40Cto EDI8L24512V12AC EDI8L24512V15AC 5630x 512Kx2

    817 BNY

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS Dense-Pac M icrosystem s M od u le s and M o n o lit h ic s . 9 Emerging Technology/Products. 10


    OCR Scan     		PDF 128Kx32/256Kx16/512Kx8, 250ns, 512Kx8, 300ns, 817 BNY