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    EDI8L32512V Search Results

    EDI8L32512V Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V Original PDF
    EDI8L32512V12AC White Electronic Designs 512Kx32 SRAM Module.3.3V Original PDF
    EDI8L32512V12AC White Electronic Designs 512Kx32 SRAM MODULE,3.3V Original PDF
    EDI8L32512V12AC White Microelectronics 12ns 3.3V power supply 512K x 32 SRAM module Original PDF
    EDI8L32512V15AC White Electronic Designs 512Kx32 SRAM Module.3.3V Original PDF
    EDI8L32512V15AC White Microelectronics 15ns 3.3V power supply 512K x 32 SRAM module Original PDF
    EDI8L32512V15AI White Microelectronics 15ns 3.3V power supply 512K x 32 SRAM module Original PDF
    EDI8L32512V17AC White Electronic Designs 512Kx32 SRAM Module.3.3V Original PDF
    EDI8L32512V17AC White Microelectronics 17ns 3.3V power supply 512K x 32 SRAM module Original PDF
    EDI8L32512V17AI White Microelectronics 17ns 3.3V power supply 512K x 32 SRAM module Original PDF
    EDI8L32512V20AC White Microelectronics 20ns 3.3V power supply 512K x 32 SRAM module Original PDF
    EDI8L32512V20AI White Microelectronics 20ns 3.3V power supply 512K x 32 SRAM module Original PDF

    EDI8L32512V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MO-47AE

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31

    EDI8L32512V-AC

    Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
    Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8L32512V-AC EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L

    EDI8L32512V-AC

    Abstract: 8L32512V
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31

    EDI8L32512V

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C

    EDI8L32512V25AI

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 MO-47AE EDI8L32512V EDI8L32512V25AI

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C lineDQ02 cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8K32512V

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		PDF EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AI EDI8L32128V15AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		PDF EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V15AI EDI8L32128V20AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE

    60MHZ

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization


    Original     		PDF EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		PDF EDI8L32128V 128KX32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC EDI8L32128V20AC ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE

    ADSP-21060L

    Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
    Text: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		PDF EDI8F32512V 512Kx32 EDI8F32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, ADSP-21060L ADSP-21062L EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32128V White Electronic Designs T NO FEATURES 128KX32 CMOS HIGH SPEED STATIC RAM 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		PDF EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) 64Kx32 EDI8L3265C) 256Kx32 EDI8L32256C)

    EDI8L32128V

    Abstract: EDI8L32512V MO-47AE TMS320LC31
    Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to


    Original     		PDF EDI8L32256V 256Kx32 256Kx32 EDI8L32256V TMS320LC31, 512Kx16. 512Kx48 256Kx24s EDI8L24256V) EDI8L32128V EDI8L32512V MO-47AE TMS320LC31

    ADSP2106XL

    Abstract: No abstract text available
    Text: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,


    OCR Scan     		PDF EDI8L32512V 512Kx32SftAMModuk 512KX32CMOSHigh EDI8L32512V sTMS320LC31 EDI8L32256V ECN8L32512V ADSP2106XL

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC Preliminary 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, • ADSP-21060L SHARC


    OCR Scan     		PDF I8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 sTMS320LC31 EDI8L32512V

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		PDF ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC

    Untitled

    Abstract: No abstract text available
    Text: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access


    OCR Scan     		PDF EDI8L32128V 128Kx32 ADSP-21060L ADSP-210621Random MO-47AE) 128KX32CMOSHigh EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC

    256kx32

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
    Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		PDF EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J

    JEDECMO-47AE

    Abstract: No abstract text available
    Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution • ADSP-21060L SHARC • ADSP-21062L (SHARC) • TMS320LC31 The ED I8L32512V is a high speed, 3.3V, 16 m egabit SRAM . The device is available w ith access tim es of 12,


    OCR Scan     		PDF I8L32512V 512Kx32 ADSP-21062L I8L32512V ADSP-21060L TMS320LC31 MPC860 S320LC EDI8L32512V JEDECMO-47AE

    ED18L32512V

    Abstract: ED18L325 ED18L32512 ED18L
    Text: X32 ASYNCHRONOUS FAMILY 64K128K256KAND512KX325V/3.3V are packaged in a 68 pin, 0.99" square PLCC package. Available in either a 5V or 3.3V version the x32 family provides access speeds of 10ns, 12ns, 15ns and 20ns. EDI’s x32 Asynchronous SRAM family is de­


    OCR Scan     		PDF 64K128K256KAND512KX325V/3 TMS320C3x TMS320C4x 64Kx32 128Kx32, 256Kx32 512Kx32. MO-47AE 65CxxAC ED18L32512V ED18L325 ED18L32512 ED18L

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: ^EDI ED I8L32512V 512Kx32 SRAM Module ELECTRONIC DESIGNS. INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The ED I8L32512V is a high speed, 3.3V, 16 m egabit • ADSP-21060L SHARC SRAM. The device is available w ith access tim es of 12,


    OCR Scan     		PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V 3512Kx32 ADSP-21060L ADSP-21062L EDI8L32128V MPC860

    Untitled

    Abstract: No abstract text available
    Text: W D ED I8L32128V I ELECTRONIC DESIGNS, INC I 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static density Static RAM. The device is available with access Analog SHARC External Memory Solution


    OCR Scan     		PDF I8L32128V 128Kx32 EDI8L32128V ADSP-21060L 60MHz ADSP-21062L ADSP-21062L 128Kx32