TRAY FBGA 11X13
Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72MS-P
TRAY FBGA 11X13
S72MS512PE0HF94V
MCP NAND sDR
BGA 15X15
137-Ball
MCP NAND DDR
S30MS-P
Spansion NAND Flash
Spansion NAND Flash DIE
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WS512S
Abstract: S29WS-S S29WS-P AMAX-16 WS512P WS128P 811-X SA-A11 8x116
Text: Migrating From S29WS-P to S29WS-R and S29WS-S Application Note By: Jan Gatermann, Keith Luo, Rudy Sterner and James Escamilla 1. Introduction Spansion is always seeking to cost reduce its product line. The 65 nm product families, S29WS-R and S29WS-S, continue that tradition while adding improvements such as higher densities, simplified command
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S29WS-P
S29WS-R
S29WS-S
S29WS-R
S29WS-S,
S29WS-S:
WS512S
S29WS-S
AMAX-16
WS512P
WS128P
811-X
SA-A11
8x116
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S72NS512RE0
Abstract: DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS512RE0
DDQ15
S72NS512RD0
spansion marking date code
S29NS-R
S72NS128
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a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
Abstract: No abstract text available
Text: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book April 2007 Revision A - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.
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Au1210â
Au1250â
Au1210
Au1250
a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
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Untitled
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
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DRAM11
Abstract: ALN186 186-ball OB18-6
Text: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-S
DRAM11
ALN186
186-ball
OB18-6
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S72NS128RD0AHBL
Abstract: 2118 FAMILY DRAM block diagram 2118 FAMILY DRAM S29NS-R S72NS512RD0 S72NS512RE0 S72NS128RD0AHBL0
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS128RD0AHBL
2118 FAMILY DRAM block diagram
2118 FAMILY DRAM
S29NS-R
S72NS512RD0
S72NS512RE0
S72NS128RD0AHBL0
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DRAM11
Abstract: ADVA 186-ball NOR Flash
Text: S72WS-S based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit Eclipse NOR Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72WS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72WS-S
DRAM11
ADVA
186-ball
NOR Flash
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14010B
Abstract: AU1250
Text: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book October 2007 Revision B - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.
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Au1210â
Au1250â
Au1210
Au1250
32-bit
14010B
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512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2
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S72WS-N
16-bit
512MB NOR FLASH
BTA160
BGA 130 MCP NAND DDR
S72WS512NFFKFWZ2
Flash MCp nand DRAM 137-ball
ball 128 mcp
NAND FLASH BGA
S29WS256N
S72WS256ND0
S72WS256NDE
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c9ab
Abstract: S29NS-N marking w53 S72WS-N S75NS128NDE w933
Text: S75NS128NDE Based MCPs 1.8 Volt-only, Stacked Multi-Chip Product MCP x16 MirrorBit Flash Memory and DRAM 128 Mb Multiplexed, Simultaneous Read/Write, Burst Mode Code Flash Memory 256 Mb Multiplexed, Burst Mode Data Flash Memory 128 Mb SDR DRAM ADVANCE
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S75NS128NDE
c9ab
S29NS-N
marking w53
S72WS-N
w933
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ball 128 mcp
Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
ball 128 mcp
MCP NAND, DRAM, NOR
LJ512
S29NS-P
S72NS128PD0
S72NS256PD0
S72NS512PD0
MCP NAND
D3-D16
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F3F3
Abstract: WS256 bus1
Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product
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PN547
Abstract: D1545 transistor transistor A562 a562 transistor d1545 PN521 dh52 D1136 7416373 b1658
Text: Freescale Semiconductor User’s Guide PTKIT8102UG Rev. 1, 9/2005 MSC8102 Packet Telephony Farm Card MSC8102PFC The MSC8102 packet telephony farm card (MSC8102PFC) is a PCI telephony mezzanine card (PTMC) for evaluating media gateway products. This card is designed around the StarCore
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PTKIT8102UG
MSC8102
MSC8102PFC)
16-bit
MSC8102PFC
MSC8101
PN547
D1545 transistor
transistor A562
a562 transistor
d1545
PN521
dh52
D1136
7416373
b1658
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Flash MCp nand DRAM 137-ball
Abstract: DA12A marking PP nand sdram mcp
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
Flash MCp nand DRAM 137-ball
DA12A
marking PP
nand sdram mcp
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SDM256D166D1R
Abstract: circuit diagram of ddr ram
Text: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72VS-R
8/16M
SDM256D166D1R
circuit diagram of ddr ram
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S72NS128PD0
Abstract: MCP NAND DDR S29NS-P S72NS256PD0 S72NS512PD0 S72NS-P tray bga 8x8 S72NS512PE0KFFGG
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
S72NS128PD0
MCP NAND DDR
S29NS-P
S72NS256PD0
S72NS512PD0
tray bga 8x8
S72NS512PE0KFFGG
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S72XS128RD0AHBHE
Abstract: s72xs128 spansion top marking S29VS S72XS S29XS ADQ14 spansion marking date code
Text: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, AddressLow, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128 Mb (8M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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S72XS-R
8/16M
S72XS128RD0AHBHE
s72xs128
spansion top marking
S29VS
S72XS
S29XS
ADQ14
spansion marking date code
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au1550
Abstract: au1100 au120 8254 TIMER 1400271 au1200-333 0x800000C0
Text: RMI Alchemy Au1200™ Processor Data Book February 2006 Publication ID: 32798E RMI Alchemy™ Au1200™ Processor Data Book 2006 Raza Microelectronics, Inc. All rights reserved. The contents of this document are provided in connection with Raza Microelectronics, Inc. “RMI” products. RMI makes no representations or warranties with
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Au1200TM
32798E
au1550
au1100
au120
8254 TIMER
1400271
au1200-333
0x800000C0
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Spansion ddr
Abstract: MCP NOR FLASH SDRAM elpida s99pl EHB0020A1MA ELPIDA DDR User
Text: PRELIMINARY DATA SHEET 32Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0020A1MA Description DDR SDRAM Specifications The EHB0020A1MA is a MCP Multi Chip Package ; TM 32M bits flash memory organized the Spansion (S99PL032J0029) and the Elpida 512M bits DDR SDRAM in one package.
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512Mb
EHB0020A1MA
EHB0020A1MA
S99PL032J0029)
151-ball
266Mbps
M01E0107
E1017E20
Spansion ddr
MCP NOR FLASH SDRAM elpida
s99pl
ELPIDA DDR User
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S72VS256RE0
Abstract: S72VS128RD0 S29VS S72VS-R SD-M128 SD-M256
Text: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72VS-R
8/16M
S72VS256RE0
S72VS128RD0
S29VS
SD-M128
SD-M256
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au1550
Abstract: mi motherboard circuit diagram ms 7529 au155 amd alchemy au1100 profile AU1550-500 NF 841 switching diode AU1100 "ESP" mba 810 Au1000
Text: AMD Alchemy Au1550™ Security Network Processor Data Book May 2006 Publication ID: 30283D AMD Alchemy™ Au1550™ Security Network Processor Data Book 2006 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro
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AlchemyTMAu1550TM
30283D
Au1550TM
au1550
mi motherboard circuit diagram ms 7529
au155
amd alchemy au1100 profile
AU1550-500
NF 841 switching diode
AU1100
"ESP"
mba 810
Au1000
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TCMS
Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S72WS256N
16M/32M
16-bit)
16-bit
TCMS
S29WS-N
S72WS256ND0
S72WS256NDE
S72WS256NEE
225 J 250 AVA CL 20
JEP95
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HY514460
Abstract: No abstract text available
Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514460
Kx164
16-bit
400mil
40pin
40/44pin
1AC12-00-APR93
DDQ1553
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