Untitled
Abstract: No abstract text available
Text: S98WS256PD0-003 Stacked Multi-chip Product MCP 256 Mbit (16 M x 16-Bit) 1.8 V Burst Mode Flash Memory 128 Mb (8M x 16-Bit) 1.8 V CellularRAM Type 2, Burst Mode Data Sheet S98WS256PD0-003 Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S98WS256PD0-003
16-Bit)
S98WS256PD0-003
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HYE18P16161AC
Abstract: No abstract text available
Text: Data Sheet, V2.2, July 2004 HYE18P16161AC-70/L70 HYE18P16161AC-85/L85 16M Asynchronous/Page CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-7-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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HYE18P16161AC-70/L70
HYE18P16161AC-85/L85
HYE18P16161AC
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MT45W4MW16PCGA
Abstract: No abstract text available
Text: 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Features Async/Page CellularRAM 1.0 MT45W4MW16PCGA Features Figure 1: • Single device supports asynchronous and page operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.V–3.3V VCCQ • Random access time: 70ns
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MT45W4MW16PCGA
A64Mb:
09005aef81f0698d
09005aef81f06935
MT45W4MW16PCGA
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15X16
Abstract: No abstract text available
Text: A/D MUX Part Numbering System FM C XX XX X X - X XX X X Fidelix Memory Product Family Temperature C : 0℃~70℃ S : -10℃~60℃ 70℃ E : -25℃~85℃ I : -40℃~85℃ C : A/D MUX Device Depth 08 : 8M 16 : 16M 32 : 32M 64 : 64M 12 : 128M Data Width / CellularRAM Version
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66MHz
104MHz
133MHz
83MHz
110Mhz
15X16
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC
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MT45W256KW16PEGA
16-word
48-Ball
09005aef8329b746/Source:
09005aef82f264aa
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962n
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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09005aef80ec6f63
pdf/09005aef80ec6f46
962n
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MT45W2MW16PFA-70 WT
Abstract: PX300 PW204 pw306 PW203 PW303
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4MV16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2MV16PFA MT45W2ML16PFA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets
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MT45W4MW16PFA
MT45W4MV16PFA
MT45W4ML16PFA
MT45W2MW16PFA
MT45W2MV16PFA
MT45W2ML1oducts
MT45W2MW16PFA-70 WT
PX300
PW204
pw306
PW203
PW303
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cr1 5 p26z
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
cr1 5 p26z
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Untitled
Abstract: No abstract text available
Text: P26Z 128Mb Burst CellularRAM 1.5 Addendum Features 128Mb Burst CellularRAM 1.5 Memory Addendum MT45W8MW16BGX Features Options • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 85ns
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128Mb
MT45W8MW16BGX
09005aef817d435b/Source:
09005aef817d4340
MT45W8MW16B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
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256Mb
32Mb/64Mb
128Mb
09005aef80c7d5a5
MT28C256564W18T
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S29WS128N
Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-N
S71WS-N
S29WS128N
S29WS256N
S71WS128NB0
S71WS128NC0
S71WS256NC0
S71WS256ND0
S71WS512N
marking YJ AM
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Untitled
Abstract: No abstract text available
Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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MT45W2MW16BGB
16-word
09005aef82832fa2
09005aef82832f5f
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88-ball
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
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256Mb
32Mb/64Mb
128Mb
09005aef80c7d5a5
MT28C256564W18T
88-ball
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BCR100
Abstract: No abstract text available
Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:
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128Mb/64Mb
09005aef81d721fb
pdf/09005aef81d72262
BCR100
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marking code micron label
Abstract: No abstract text available
Text: 128Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D ADVANCE‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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128Mb
16Mb/32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
marking code micron label
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MT28C256
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package
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256Mb
32Mb/64Mb
128Mb
09005aef80f1c46d
MT28C256564W18D
MT28C256
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FY632
Abstract: FW625
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
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09005aef80b10a55
MT28C128564W18D
FY632
FW625
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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s98ws512
Abstract: S71WS256PD0HF3SR s98ws256 s71ws256pd0hf3s S71WS256PD
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 20, 2007 Obsolescence Notification No: Subject: 2685 Obsolescence of the CellularRAM Type 3, 64M and 128M pSRAM Multi-Chip Packages MCPs products listed below Spansion LLC is announcing the obsolescence CellularRAM type 3, 64M and 128M pSRAM, and all
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S71WS128NC0BFWAE
S71WS128NC0BFWAF
S71WS128PC0HF3TR0
S71WS256PC0HF3TL
S71WS256PD0HF3TL
S71WS512PD0HF3TL
S77WS256PC0FW0010
S77WS512PD0UFX010
S98WS128PC0FW0010
S98WS256PC0FW001
s98ws512
S71WS256PD0HF3SR
s98ws256
s71ws256pd0hf3s
S71WS256PD
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC
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MT45W512KW16PEGA
16-word
48-Ball
09005aef82f264f6/Source:
09005aef82f264aa
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IS66WVD2M16DALL
Abstract: CellularRAM 66WVD2M16DALL
Text: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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IS66WVD2M16DALL
IS66WVD2M16DALL
32Mbit
-40oC
2Mx16
IS66WVD2M16DALL-7013BLI
IS66WVD2M16DALL-7010BLI
IS66WVD2M16DALL-7008BLI
54-ball
CellularRAM
66WVD2M16DALL
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IS66WVC2M16DALL
Abstract: CellularRAM 66WVC2M16DALL
Text: IS66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVC2M16DALL
IS66WVC2M16DALL
32Mbit
-40oC
2Mx16
IS66WVC2M16DALL-7013BLI
IS66WVC2M16DALL-7010BLI
IS66WVC2M16DALL-7008BLI
54-ball
CellularRAM
66WVC2M16DALL
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MT45W4MW16B
Abstract: MT45W1MW16BP23Z MT45W4MW
Text: TN-45-24: Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction Technical Note Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction This technical note details how Micron has enhanced CellularRAM CR1.0 functionality to include fixed-latency operation. Fixed latency operation is not officially supported by
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TN-45-24:
09005aef8244d128/PDF:
09005aef8244d132
TN4524
MT45W4MW16B
MT45W1MW16BP23Z
MT45W4MW
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P25A
Abstract: MT45W4MW16PCGA TN4508 mt45w4mw16pfa
Text: TN-45-08: 64Mb Async/Page CellularRAM Transition Guide Introduction Technical Note 64Mb Async/Page CellularRAM Transition Guide Introduction The Micron 64Mb family of PSRAM and CellularRAM™ devices—which have async/ page, async/page/burst and burst A/D MUX interfaces—have undergone a design
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TN-45-08:
09005aef81e92416/Source:
09005aef81e84dac
tn4508-09
P25A
MT45W4MW16PCGA
TN4508
mt45w4mw16pfa
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