tba 2003
Abstract: No abstract text available
Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2003 Rev. 1.4 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.
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GLT6400L16
GLT6400L16
70ns/85ns
32TYP
75TYP
tba 2003
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.
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GLT6400M16
GLT6400M16
120ns.
32TYP
75TYP
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TAA 691
Abstract: CY7C128A-20VXC transistor C128 C128A CY7C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC
Text: CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , and active
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CY7C128A
CY7C128A
TAA 691
CY7C128A-20VXC
transistor C128
C128A
CY7C128A-15PC
CY7C128A-15VC
CY7C128A-15VXC
CY7C128A-35VC
CY7C128A-45PC
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CY7C161A
Abstract: CY7C162A
Text: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.
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CY7C161A
CY7C162A
7C161A)
38-00116-C
28-Lead
300-Mil)
28-Pin
MIL-STD-1835
CY7C161A
CY7C162A
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CY7C161
Abstract: CY7C162 C1624
Text: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.
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CY7C161
CY7C162
15-ns
7C161)
CY7C161
CY7C162
C1624
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption.
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GLT6100L16
GLT6100L16
44pin
GLT710008-15T
128Kx8
300mil
GLT44016-40J4
256Kx16
400mil
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GLT6400L08
Abstract: No abstract text available
Text: G -LINK GLT6400L08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6400L08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.
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GLT6400L08
GLT6400L08
445mil
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100L08
Abstract: GLT710008 8X13
Text: G -LINK GLT6100L08 Ultra Low Power 128k x 8 CMOS SRAM Nov 2000 Rev. 02 Features : Description : ∗ The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.
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GLT6100L08
GLT6100L08
GLT44016-40J4
256Kx16
400mil
8x20mm
100L08
GLT710008
8X13
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GLT6400L08
Abstract: GLT6400L08LL-70 GLT6400L08LL-85 GLT6400L08SL-70 GLT6400L08SL-85 GLT6400L08SLI-70 GLT6400L08SLI-85 SRAM 10ns
Text: G -LINK GLT6400L08 Ultra Low Power 512k x 8 CMOS SRAM Feb 2001 Rev. 1.1 Features : Description : ∗ The GLT6400L08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.
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GLT6400L08
GLT6400L08
445mil
GLT6400L08LL-70
GLT6400L08LL-85
GLT6400L08SL-70
GLT6400L08SL-85
GLT6400L08SLI-70
GLT6400L08SLI-85
SRAM 10ns
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.
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GLT6200L08
GLT6200L08
32-sTSOP.
48Ball
36TYP
75TYP
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev.3.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.
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GLT6400M08
GLT6400M08
120ns.
445mil
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C1915
Abstract: CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919
Text: CY7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed
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CY7C191
CY7C192
7C191)
C1915
CY7C192-25PC
7C192-12
7C192-15
C191
CY7C191
CY7C192
C1919
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c1918
Abstract: C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914
Text: 1CY 7C19 2 CY7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected.
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CY7C191
CY7C192
7C191)
c1918
C1915
CY7C192-25PC
7C192-12
7C192-15
C191
CY7C191
CY7C192
C1914
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Untitled
Abstract: No abstract text available
Text: Features * Industry Standard Architecture - Low Cost Easy-to-Use Software Tools * High-Speed, Electrically-Erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-Pin Delay * Several Power Saving Options Device lcc, Stand-By lcc, Active ATF22V10B 85 mA
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ATF22V10B
ATF22V10BQ
ATF22V10BQL
ATF22V10B
24-Lead,
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Untitled
Abstract: No abstract text available
Text: CY7C185A CYPRESS SEMICONDUCTOR • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with C Ei, CE 2 and OE features • Automatic power-down when
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CY7C185A
7C185A
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S4402 φ1 mm quadrant APD Features Applications l Uniform element characteristics Quadrant format on one chip with φ1 mm active area ensures uniform characteristics between elements. l Single power supply operation Allows easy and simple operation.
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S4402
SE-171
KAPD1002E02
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transistor 1BW
Abstract: S4402 SE-171 quadrant photodiode Si apd photodiode quadrant apd
Text: PHOTODIODE Si APD S4402 φ1 mm quadrant APD Features Applications l Uniform element characteristics Quadrant format on one chip with φ1 mm active area ensures uniform characteristics between elements. l Single power supply operation Allows easy and simple operation.
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S4402
SE-171
KAPD1002E02
transistor 1BW
S4402
quadrant photodiode
Si apd photodiode
quadrant apd
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CY7C161A
Abstract: CY7C162A CY7C161A-25DMB
Text: 1CY 7C16 2A CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.
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CY7C161A
CY7C162A
7C161A)
CY7C161A
CY7C162A
CY7C161A-25DMB
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C185A
Abstract: CY7C185 CY7C185A
Text: ww.hoknY7C185A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features
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hoknY7C185A
CY7C185A
CY7C185A
300-mil-widr
7C185A
C185A
CY7C185
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TBA 641 B 12
Abstract: sop-40 small outline TSOPII 1M x 16 SRAM
Text: G -LINK GLT6200L16 Ultra Low Power 128k x 16 CMOS SRAM Aug 2001 Rev. 2.6 Features : Description : ∗ The GLT6200L16 is a low power CMOS Static RAM organized as 131,072 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin. Low-power consumption.
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GLT6200L16
GLT6200L16
36TYP
75TYP
TBA 641 B 12
sop-40 small outline
TSOPII
1M x 16 SRAM
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C1623
Abstract: C1624 c162 c1627 C1622 CY7C161 CY7C162 C1628 C1625
Text: 1CY 7C16 2 CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.
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CY7C161
CY7C162
15-ns
7C161)
C1623
C1624
c162
c1627
C1622
CY7C161
CY7C162
C1628
C1625
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Untitled
Abstract: No abstract text available
Text: CY7C148 1Kx4 Static RAM Features Functional Description • Automatic power-down when deselected ■ CMOS for optimum speed/power ■ 35-ns access time ■ Low active power ❐ 440 mW The CY7C148 is a high-performance CMOS static RAMs organized as 1024 by 4 bits. Easy memory expansion is provided
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CY7C148
CY7C148
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Untitled
Abstract: No abstract text available
Text: CLD50 SERIES 50 WATT DUAL OUTPUT LED POWER SUPPLY Features * Universal AC Input Range 90-264Vac * High Active PFC >0.9 * Low Inrush Current <5A * Low Profile for Easy Installation * Low Flicker for Lighting, with Low ripple & noise * Output Constant Current Design
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CLD50
90-264Vac
IEC/EN61347,
CLD50D240
-C100
CLD50D420
-C060
8-24VDC
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CIRCUIT DIAGRAM UPS
Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC ATF22V10B ATF22V10B-7JC ATF22V10B-7PC ATF22V10B-7SC ATF22V10BQ ATF22V10BQL
Text: Features • Industry Standard Architecture – Low-cost Easy-to-use Software Tools • High-speed, Electrically-erasable Programmable Logic Devices – 7.5 ns Maximum Pin-to-pin Delay • Several Power Saving Options Device ICC, Standby ICC, Active ATF22V10B
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ATF22V10B
ATF22V10BQ
ATF22V10BQL
20-year
0250H
12/99/xM
CIRCUIT DIAGRAM UPS
64 CERAMIC LEADLESS CHIP CARRIER LCC
ATF22V10B
ATF22V10B-7JC
ATF22V10B-7PC
ATF22V10B-7SC
ATF22V10BQ
ATF22V10BQL
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