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    ACTIVE POWER EASY 600 Search Results

    ACTIVE POWER EASY 600 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    ACTIVE POWER EASY 600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.2 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


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    PDF GLT6400L16 GLT6400L16 32TYP 75TYP

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


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    PDF GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP

    tba 2003

    Abstract: No abstract text available
    Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2003 Rev. 1.4 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


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    PDF GLT6400L16 GLT6400L16 70ns/85ns 32TYP 75TYP tba 2003

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


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    PDF GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP

    "256K x 16" SRAM PLCC

    Abstract: GLT710008
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2000 Rev. 0.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


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    PDF GLT6400M16 GLT6400M16 75TYP 36TYP "256K x 16" SRAM PLCC GLT710008

    TAA 691

    Abstract: CY7C128A-20VXC C128A CY7C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC
    Text: CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , and active


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    PDF CY7C128A CY7C128A TAA 691 CY7C128A-20VXC C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC

    TAA 691

    Abstract: CY7C128A-20VXC transistor C128 C128A CY7C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC
    Text: CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , and active


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    PDF CY7C128A CY7C128A TAA 691 CY7C128A-20VXC transistor C128 C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC

    Untitled

    Abstract: No abstract text available
    Text: CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , and active LOW


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    PDF CY7C128A CY7C128A

    C185A

    Abstract: CY7C185 CY7C185A CY7C185A-15DMB
    Text: CY7C185A 8KĂxĂ8 Static RAM Features CMOS for optimum speed/power Low active power 743 mW Low standby Power 220 mW TTL Ćcompatible inputs and outputs Easy memory expansion with CE1, CE2 and OE features Automatic powerĆdown when deselected Logic Block Diagram


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    PDF CY7C185A CY7C185A 300milwide C185A CY7C185 CY7C185A-15DMB

    CY7C161A

    Abstract: CY7C162A
    Text: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.


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    PDF CY7C161A CY7C162A 7C161A) 38-00116-C 28-Lead 300-Mil) 28-Pin MIL-STD-1835 CY7C161A CY7C162A

    CY7C161

    Abstract: CY7C162 C1624
    Text: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.


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    PDF CY7C161 CY7C162 15-ns 7C161) CY7C161 CY7C162 C1624

    GLT6100L08LL-100TS

    Abstract: GLT6100L08LL-35ST GLT6100L08LL-35TS GLT6100L08LL-45ST GLT6100L08LL-45TS GLT6100L08LL-55TS GLT6100L08LL-70TS GLT6100L08LL-85TS
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.


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    PDF GLT6200L08 GLT6200L08 32-TSOPI 36TYP 75TYP GLT6100L08LL-100TS GLT6100L08LL-35ST GLT6100L08LL-35TS GLT6100L08LL-45ST GLT6100L08LL-45TS GLT6100L08LL-55TS GLT6100L08LL-70TS GLT6100L08LL-85TS

    GLT710008

    Abstract: No abstract text available
    Text: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption.


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    PDF GLT6100L16 GLT6100L16 44pin GLT710008-15T 128Kx8 300mil GLT44016-40J4 256Kx16 400mil GLT710008

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption.


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    PDF GLT6100L16 GLT6100L16 44pin GLT710008-15T 128Kx8 300mil GLT44016-40J4 256Kx16 400mil

    GLT6200L08LL-55

    Abstract: GLT6200L08LL-70 GLT6200L08LL-85 GLT6200L08LLI-55 GLT6200L08LLI-70 GLT6200L08LLI-85 GLT6200L08SL-55 GLT6200L08SL-70 GLT6200L08SL-85
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Nov 2000 Rev. 1.0 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


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    PDF GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP GLT6200L08LL-55 GLT6200L08LL-70 GLT6200L08LL-85 GLT6200L08LLI-55 GLT6200L08LLI-70 GLT6200L08LLI-85 GLT6200L08SL-55 GLT6200L08SL-70 GLT6200L08SL-85

    GLT6400M08LL-120

    Abstract: GLT6400M08SL-120 GLT6400M08SLI-120
    Text: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Nov 2000 Rev. 2.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


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    PDF GLT6400M08 GLT6400M08 120ns. 48-fpBGA GLT6400M08LL-120 GLT6400M08SL-120 GLT6400M08SLI-120

    100L08

    Abstract: GLT710008 8X13
    Text: G -LINK GLT6100L08 Ultra Low Power 128k x 8 CMOS SRAM Nov 2000 Rev. 02 Features : Description : ∗ The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.


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    PDF GLT6100L08 GLT6100L08 GLT44016-40J4 256Kx16 400mil 8x20mm 100L08 GLT710008 8X13

    GLT6400L08

    Abstract: GLT6400L08LL-70 GLT6400L08LL-85 GLT6400L08SL-70 GLT6400L08SL-85 GLT6400L08SLI-70 GLT6400L08SLI-85 SRAM 10ns
    Text: G -LINK GLT6400L08 Ultra Low Power 512k x 8 CMOS SRAM Feb 2001 Rev. 1.1 Features : Description : ∗ The GLT6400L08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


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    PDF GLT6400L08 GLT6400L08 445mil GLT6400L08LL-70 GLT6400L08LL-85 GLT6400L08SL-70 GLT6400L08SL-85 GLT6400L08SLI-70 GLT6400L08SLI-85 SRAM 10ns

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


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    PDF GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev.3.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


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    PDF GLT6400M08 GLT6400M08 120ns. 445mil

    C1915

    Abstract: CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919
    Text: CY7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed


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    PDF CY7C191 CY7C192 7C191) C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919

    c1918

    Abstract: C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914
    Text: 1CY 7C19 2 CY7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected.


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    PDF CY7C191 CY7C192 7C191) c1918 C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914

    Untitled

    Abstract: No abstract text available
    Text: CY7C185A CYPRESS SEMICONDUCTOR • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CEi, CE2 and OE features • Automatic power-down when


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    PDF CY7C185A CY7C185A 300-mil-wide

    Untitled

    Abstract: No abstract text available
    Text: Features * Industry Standard Architecture - Low Cost Easy-to-Use Software Tools * High-Speed, Electrically-Erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-Pin Delay * Several Power Saving Options Device lcc, Stand-By lcc, Active ATF22V10B 85 mA


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    PDF ATF22V10B ATF22V10BQ ATF22V10BQL ATF22V10B 24-Lead,