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    ABB SEMICONDUCTORS THYRISTOR Search Results

    ABB SEMICONDUCTORS THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ABB SEMICONDUCTORS THYRISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3 phase motor soft starter circuit diagram, ABB

    Abstract: abb SOFT STARTER CIRCUIT DIAGRAM thyristor testing 3 phase motor soft starter circuit diagram 3 phase motor soft starter diagram all types of thyristor and schematic igtb ABB Thyristor 1000 A thyristor ABB thyristor 5
    Text: Bi-Directional Control Thyristor Product Information ABB Semiconductors AG Bi-Directional Control Thyristor Product Information Björn Backlund, Jan-Olav Boeriis, Ken Thomas, Robert Waishar, Jürg Waldmeyer, Orhan Toker ABB Semiconductors AG February 1999.


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    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


    Original     		PDF CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12

    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


    Original     		PDF 30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1

    thyristor Q 720

    Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor


    Original     		PDF 1960s, 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 thyristor Q 720 thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200

    GTO hvdc thyristor

    Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives


    Original     		PDF 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 CH-5600 GTO hvdc thyristor 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB

    IGCT thyristor ABB

    Abstract: IGCT
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency


    Original     		PDF 19L6020 5SYA1250-00 CH-5600 IGCT thyristor ABB IGCT

    30J4502

    Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB
    Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static


    Original     		PDF 30J4502 30J4502 CH-5600 capacitor abb 5sgf30j4502 GTO thyristor ABB

    GTO thyristor ABB

    Abstract: ABB 5SGA ABB GTO ABB thyristor 5
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 15F2502 CH-5600 GTO thyristor ABB ABB 5SGA ABB GTO ABB thyristor 5

    GTO thyristor ABB

    Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 30L4502 30L4502 CH-5600 GTO thyristor ABB reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5

    ABB 5STP 16F2600

    Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
    Text: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 16F2800 16F2800 16F2600 16F2200 67xVDRM CH-5600 ABB 5STP 16F2600 5STP 16F2600 5STP 16F2800 ABB 5STP 12 5STP16F2200

    21F1400

    Abstract: 5STP21F1200 abb 26000
    Text: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 21F1400 21F1400 21F1200 21F0800 67xVDRM CH-5600 5STP21F1200 abb 26000

    5STP 07D1200

    Abstract: 5STP 07D1600 5STP07D1600 07d18
    Text: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 07D1800 07D1800 07D1600 07D1200 67xVDRM CH-5600 5STP 07D1200 5STP 07D1600 5STP07D1600 07d18

    IGCT thyristor ABB

    Abstract: high power igct abb 5SHX 08F4502 abb cs 400
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 Doc. No. 5SYA 1223-04 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 08F4502 CH-5600 IGCT thyristor ABB high power igct abb 5SHX 08F4502 abb cs 400

    5SHX26L4520

    Abstract: tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4520 Doc. No. 5SYA1251-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency


    Original     		PDF 26L4520 5SYA1251-00 CH-5600 5SHX26L4520 tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439

    5STP06D2600

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 06D2800 06D2800 06D2600 06D2200 67xVDRM CH-5600 5STP06D2600

    5STP24H2800

    Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
    Text: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 24H2800 24H2800 24H2600 24H2200 67xVDRM CH-5600 5STP24H2800 ABB 5STP abb S 24H220

    ABB 5STP 12

    Abstract: 24L00 5STP IG 2200 19 5stp 45n 3600 5STP 18L 3600 05mm2 ABB Semiconductors DDQ001S abb phase control thyristors
    Text: Phase Control Thyristors ABB Semiconductors AG I II V DSM •t a v m < t y p e and ordering n um ber Patentierter freier Druckkontakt. Ausgelegt für Hochleistungsanwendungen in der Industrie und Energieübertragung. Optimiert für tiefe Durchlaßspannungen.


    OCR Scan     		PDF 10STP D01bfi3fl DDQ001S ABB 5STP 12 24L00 5STP IG 2200 19 5stp 45n 3600 5STP 18L 3600 05mm2 ABB Semiconductors abb phase control thyristors

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


    OCR Scan     		PDF 15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV

    Abb breakover diode

    Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
    Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >


    OCR Scan     		PDF VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800

    ABB EH 1200

    Abstract: ABB 5STP 12 ABB EH 250 5STP45N 5stp 6 abb phase control thyristors 5STP 4 5STP 12 ABB 5STP 07D
    Text: Phase Control Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. Designed for high pow er industrial and energy m anagem ent applications. O ptim ized for low on-state voltage drop. M atched Q rr and VT values available for series and/or parallel connection.


    OCR Scan     		PDF VDSM/100 Tc-70 5STP45N 5STP34N-00 001b63fi Q01bfl3fl DD00071 ABB EH 1200 ABB 5STP 12 ABB EH 250 5stp 6 abb phase control thyristors 5STP 4 5STP 12 ABB 5STP 07D

    fast thyristor

    Abstract: fast turn on thyristor 5STF cross reference thyristor FAST SWITCHING THYRISTOR
    Text: Fast Switching Thyristors ABB Semiconductors AG I Sym m etrische oder asym m etrische Sperrfähigkeit. Kleine Schattverluste. Kurze Freiwerdezeiten. Verzw eigte G ate-S truktur mit Z ündver­ stärkung für schnelles Einschalten und hohes di/dt. S ym m etrically or asym m etrically


    OCR Scan     		PDF VDRM/100 7x100 30x100 tq/10 26x100 65x100 000G073 fast thyristor fast turn on thyristor 5STF cross reference thyristor FAST SWITCHING THYRISTOR

    FAST SWITCHING THYRISTOR

    Abstract: asymmetric thyristor ABB thyristor 5 Faston 6.3x0,8
    Text: Fast Switching Thyristors ABB Semiconductors AG I S ym m etrically o r asym m etrically blocking. Low sw itching losses. Short turn-off time. Interdigitated am plifying gate for fast turn-on and high di/dt. Type and ordering number VDRM VRRM Sym m etrische oder asym m etrische


    OCR Scan     		PDF 5STF06D 7x100 30x100 tq/10 26x100 65x100 FAST SWITCHING THYRISTOR asymmetric thyristor ABB thyristor 5 Faston 6.3x0,8

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502

    5stf08f

    Abstract: S2000V fjs 500 ABB thyristor CROSS REFERENCE LIST 7085c 5STF
    Text: Fast Switching Thyristors ABB Semiconductors AG I Low sw itching losses. Short tu rn -o ff time. Interdigitated am plifying gate for fast turn-on and high di/dt. T yp e and ordering num ber Kleine Schaltverluste. Kurze Freiwerdezeiten. Verzw eigte G ate-S truktur mit Z ün d ve r­


    OCR Scan     		PDF VDRM/100 16ary 30x100 tq/10 65x100 5stf08f S2000V fjs 500 ABB thyristor CROSS REFERENCE LIST 7085c 5STF