SDA5241
Abstract: sda 5241 a5006 sda 5231-2 sync STT 3 SIEMENS
Text: SIE D • fl53SbG5 DD441S2 TT4 « S I E G S IE M E N S - c - - n ~ c > - t- i3 SIEMENS AKTIENGESELLSCHAF SD A 5231-2 Data Slicer for Teletext Bipolar IC Preliminary Data Features • Crystal-stable data clock regeneration for a bit rate of 6.9375 MHz • Separation and regeneration of teletext infor
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fl53SbG5
DD441S2
P-DIP-28
67000-A5006
T-77-07-13
E35bOS
T--77--07--13
SDA5241
sda 5241
a5006
sda 5231-2
sync
STT 3 SIEMENS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection
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T0220/7
E3128
l23SbDS
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2f5 transistor
Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF
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a23SbOS
2f5 transistor
Transistor BFT 99
TIC 122 Transistor
2SC 2090
Transistor BFT 44
U/25/20/TN26/15/850/BFT75
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T60403-L4021
Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Text: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input
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fl23SbOS
PE-68975*
PE-64995
PE-65495
PE-65795
PE-68995
B78384-A1060-A2*
B78384-P1111-A2
T60403-L4025-X021*
T60403-L4097-X011*
T60403-L4021
function of lts 543 ic
OB35
ltp250
T1605
vogt 543
VOGT B1
65495
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028
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2-03W
Q62702-A1028
2-03W
OD-323
S535b05
D1SD354
900MHz
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BFT66
Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband
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23SbQS
Q62702-F456
Q62702-F457
BFT66,
BFT67
103MHz
fi535b05
DQ0H715
BFT66
BFT67
BFT 66 S1
Q62702-F456
nf5102
6NF20
BA 758
Q62702-F457
QQQM710
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ZO 607 MA 7A 523
Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Text: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!
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BFQ82
BFQ82
Q62702-F1189
AH35b05
00b7Sn
ZO 607 MA 7A 523
cmo 765
transistor zo 607 MA 7S
ZO 607 MA 7A 524
CM 1241 siemens
Ka2 transistor
BFQ 270
ZO 607 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
2200b
IS21I2
fl235bQS
0122QQ7
0235b05
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AF379
Abstract: transistor D 379 AF 379 Q62701-F72 5C p Germanium power CE013
Text: 2SC D • ÖS3SbD5 0QQ4QÔS 5 « S I E G T - 3t~ O f PNP Germanium RF Transistor AF 379 - SIEMENS AKTIENßESELLSCHAF -for large sig n a l a p p lica tio n s u p to 9 0 0 M H z A F 3 7 9 is a PN P germanium planar RF transistor in 5 0 B 3 DIN 4 1 8 6 7 plastic package
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023SbD5
Q62701-F72
flBES500
voltage11
AF379
transistor D 379
AF 379
Q62701-F72
5C p
Germanium power
CE013
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Untitled
Abstract: No abstract text available
Text: SIEM ENS A udio R inging C odec Filter B asic Function A R C O FI-B A Version 1.1 1.3 PSB 2161 BICMOS Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CODEC functions • Fully compatible to the ITU-T G. 712 and ETSI
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NET33)
16-bit
023Sb05
010271b
P-DSO-28-1
fl235b05
D1DE717
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ft66
Abstract: BFT66
Text: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband
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fl23Sb
aa35b05
0QQH715
ft66
BFT66
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q1257
Abstract: D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035
Text: SIEM ENS Multichannel Network Interface Controller for HDLC MUNICH32 PEB 20320 CMOS 1C Version 3.4 1.1 Features • Serial Interface - Up to 32 independent communication channels. - Serial multiplexed full duplex input/output for 2048-, 4096-, 1544- or 1536-Kbit/s PCM
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MUNICH32
1536-Kbit/s
24-channel
32-channel
q1257
D1557
MARKING DIAGRAMS sob 214
intel schematics
150N150A
intel 80386 SL
MARKING CODE CKQ TI
e7f01
J027
TDA 2035
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0s35
Abstract: b17 zener diode
Text: SIEMENS HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^DS(on) 28 m£2 • Thermal Shutdown Current limit 25 A • Overload protection Nominal load current
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023SbDS
0s35
b17 zener diode
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Transistor BFT 99
Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF
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Q0G4713
Q62702-F513
051i0
Transistor BFT 99
BFT75
Q62702-F513
siemens CIB
BFt 66
Transistor BFT 44
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