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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W


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    OT-323 0535b05 PDF

    ZO 607 MA 7A 523

    Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
    Text: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!


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    BFQ82 BFQ82 Q62702-F1189 AH35b05 00b7Sn ZO 607 MA 7A 523 cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor PDF

    B23SL

    Abstract: smd transistor 718
    Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Bipolar 1C Features • • • • • • • • • • • • • • Output voltage tolerance < + 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms


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    P-T0220-7-180 Q67000-A9153 Q67006-A9169 Q67000-A9246 P-T0220-7-3 P-T0220-7-230 B23SL05 AH35b05 B23SL smd transistor 718 PDF