CE5C
Abstract: CEA 243 A12C A14C ZZ1A18 6803 microprocessor pcetc
Text: DALLAS SEMICONDUCTOR CORP BTE D m 2 b l 4] i 3D Q0033t>E S 1 3 DAL 0S5340 n~'5Z-!>V 0.5 DS5340 V40 Softener Chip DJy.!LAS SEMICONDUCTOR FEATURES PIN DESCRIPTION • Provides softness for V40-based systems • Adapts to task-at-hand: -Converts up to 672K bytes of CMOS
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Q0033t
13DAL
0S5340
DS5340
V40-based
A10CZÃ
20000H
G0000H
80000H
E000CH
CE5C
CEA 243
A12C
A14C
ZZ1A18
6803 microprocessor
pcetc
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Untitled
Abstract: No abstract text available
Text: DS5303 PRODUCT PREVIEW DALLAS DS5303 6303 Softener Chip s e m ic o n d u c t o r FEATURES PACKAGE OUTLINE • Provides softness for HD6303-based systems: •iinnnnnnnnnnnnnnn r 80 79 n 77 76 7S 74 73 72 71 70 6» 66 67 66 <6 > 64 — IWJ7PUT 1 2 63 I D VCCI
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DS5303
HD6303-based
CRC-16
DS5303
DS5303FP
80-pin
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a01494
Abstract: A19C Z3A18 ZDA17
Text: r z ^ T j S G S -T H O M S O N # . M28F841 IM 1 0 g [S [1 0 = [lO T (S M lB ( g S 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALLS1ZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each
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M28F841
TSOP40
100ns
TSOP40
00bA712
a01494
A19C
Z3A18
ZDA17
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ELAP CM 72
Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3
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Untitled
Abstract: No abstract text available
Text: DS5000FP DALLAS SEMICONDUCTOR DS5000FP Soft Microprocessor Chip FEATURES PIN ASSIGNMENT • 8051 compatible microprocessor adapts to its task - Accesses between 8K and 64K bytes of nonvol atile SRAM In-system programming via on-chip serial port - Can modify its own program or data memory
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DS5000FP
DS5000FP
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Untitled
Abstract: No abstract text available
Text: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE
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M28F841
TSOP40
100ns
8F841
Q0b6713
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Untitled
Abstract: No abstract text available
Text: SONY« CXK 59290 M/TM -70L710U12L 32768-word x 9-bit High Speed CMOS Static RAM D escription CXK59290M 32 pin SOP Plastic The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is
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-70L710U12L
32768-word
CXK59290M
CXK59290M/TM
CXK59290TM
CXK59290M/TM-70L
CXK59290M/TM-10L
CXK59290M/TM-12L
100ns
120ns
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03CZ
Abstract: 09CZ A14EZ
Text: HM621864HB Series 65536-word x 18-bit High Speed CMOS Static RAM HITACHI ADE-203-739 Z Preliminary Rev. 0.0 Feb. 6, 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword x 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 fim CMOS process and high speed circuit designing
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HM621864HB
65536-word
18-bit
ADE-203-739
64-kword
18-bit.
400-mil
44-pin
03CZ
09CZ
A14EZ
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Untitled
Abstract: No abstract text available
Text: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-W ord X 8-B it High Speed Pseudo Static RAM Ordering Information Description Type No. Access time HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns
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HM65V8512
24288-W
HM65V8512DFP-12
HM65V8512DFP-15
HM65V8512LFP-12
HM65V8512LFP-15
HM65V8512LFP-12V
HM65V8512LFP-15V
HM65V8512DTT-12
HM65V8512DTT-15
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1A-2K
Abstract: No abstract text available
Text: CAT29F002 S Advance Information Advance Information CAT29F002 2 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: - One 16-KB Boot Sector
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CAT29F002
16-KB
32-KB
64-KB
32-pin
32-LEAD
M0-052
1A-2K
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PDF
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KM681000BLE
Abstract: No abstract text available
Text: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d
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KM681000BLE
128Kx8
550nW
385mW
KM681000BLGE/BLGE-L
32-pin
525mil)
KM681000BLTE/BLTE-L
KM681000BLRE/BLRE-L
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Z3A11
Abstract: A10113 M28F410 M28F420 TSOP56
Text: M28F410 M28F420 SGS‘THOMSON G ì . H O » iL I § T [ M ! [ l( S Ì 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or
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M28F410
M28F420
TSOP56
x20mm
TSOP56
20/25m
Byte/50
M28F410,
Z3A11
A10113
M28F420
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a14ct
Abstract: 28f102 M28F102 A10CZ
Text: SGS-THOMSON M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ • ■ « • ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE In 1s RANGE
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M28F102
100ns
0020h
0050h
PLCC44
M28F102
PLCC44
A10CZ
A12CZ
A13CZ
a14ct
28f102
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Untitled
Abstract: No abstract text available
Text: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-415A Z Rev. 1.0 Dec. 25, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 |im CMOS process and high speed circuit designing
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HM62W1664HB
65536-word
16-bit
ADE-203-415A
64-kword
16-bit.
400-mil
44-pin
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A15CZ
Abstract: P40N10 A12CZ
Text: Gl SGS-TTiOMSON m M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware
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M28F411
M28F411
A15CZ
A13CZ
A12CZ
120ns
113AC
P40N10
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Untitled
Abstract: No abstract text available
Text: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word
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M29F102B
M28F102
0020h
0097h
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AMD k86
Abstract: No abstract text available
Text: PRELIMINARY Am186 ES/ESLV and Am188™ ES/ESLV AMD£I High Performance, 80C186-/80C188-Compatible and 80L186-/80L188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS • E86™ family 80C186-/188- and 80L186-/188compatible microcontrollers with enhanced bus
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Am186â
Am188â
80C186-/80C188-Compatible
80L186-/80L188-Compatible,
16-Bit
80C186-/188-
80L186-/188compatible
Am186ESLV
Am188ESLV
40-MHz
AMD k86
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Untitled
Abstract: No abstract text available
Text: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM HITACHI Preliminary Rev. 0.0 Nov. 20,1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM® memory products from Hitachi combine the read/write characteristics of semiconductor RAM with
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HM71V832
32768-word
32k-word
HM71V832-15
44Tb203
HM71V832FP
FP-28DA)
HM71V832T
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PDF
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HM65V8512LFP15V
Abstract: M65V8512
Text: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static RAM Ordering Information Description Type No. Access tim e H M65V8512DFP-12 120 ns H M65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns
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HM65V8512
524288-Word
288-word
120ns/150
ns/230
DD25124
HM65V8512LFP15V
M65V8512
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PDF
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K32z
Abstract: M27W201
Text: £ ÿ j SG S-THOMSON D g[^ [i!Ul æ©KID(gi M27W201 VERY LOW VOLTAGE 2 Megabit (256K x 8 OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME - 150ns (TA = 0 to 70°C) - 200ns (T a = -20 to 70°C) ■ LOW POWER CONSUMPTION - Active Current 15mA
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M27W201
150ns
200ns
PLCC32
TSOP32
24sec.
M27W201
M27C2001
K32z
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