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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max


    OCR Scan     		M28F201 M28V201 M28F201 150ns M28V201 100nA PDIP32 TSOP32 PDF

    n25Z

    Abstract: Z17D A3ZD
    Text: M29W800T M29W800B SGS-THOMSON 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10(is by Byte / 1 6|.is by Word typical


    OCR Scan     		M29W800T M29W800B x8/x16, 100ns M29W800T, M29W800T 100ns 120ns 150ns n25Z Z17D A3ZD PDF

    23C4000

    Abstract: 23C2000 a9za
    Text: SILICON INTEGR ATE» EIE D aassafll 0000000 T • T-4-b-l3-lb CMOS MASK ROM SIS 23C2000/SIS 23C2000A 256Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access Time: 200/250ns •Single + 5V Power Supply •Three-State data Outputs •TT L Compatible inputs and outputs


    OCR Scan     		23C2000/SIS 23C2000A 256Kx8 200/250ns 32-pin 23C2000 23C40Û C31/CSÌ 23C4000A26 23C4000/A-25 23C4000 23C2000 a9za PDF