Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UPA807T Search Results

    SF Impression Pixel

    UPA807T Price and Stock

    NEC Electronics Group UPA807T-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPA807T-T1 3,000 4
    • 1 -
    • 10 $1.425
    • 100 $0.5344
    • 1000 $0.3705
    • 10000 $0.3705
    		Buy Now
    Quest Components UPA807T-T1 4,800
    • 1 $2.1
    • 10 $2.1
    • 100 $2.1
    • 1000 $2.1
    • 10000 $0.462
    		Buy Now
    UPA807T-T1 2,400
    • 1 $1.9
    • 10 $1.9
    • 100 $1.9
    • 1000 $0.494
    • 10000 $0.475
    		Buy Now
    UPA807T-T1 2,300
    • 1 $1.35
    • 10 $1.35
    • 100 $1.35
    • 1000 $0.5625
    • 10000 $0.495
    		Buy Now
    UPA807T-T1 2,151
    • 1 $4.8
    • 10 $4.8
    • 100 $4.8
    • 1000 $2.4
    • 10000 $2.4
    		Buy Now

    NEC Electronics Group UPA807T-T1-A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPA807T-T1-A 59
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    California Eastern Laboratories (CEL) UPA807T-A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPA807T-A 356
    • 1 $2.1
    • 10 $2.1
    • 100 $0.7875
    • 1000 $0.735
    • 10000 $0.735
    		Buy Now

    UPA807T Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPA807T Unknown SMD, High Frequency Amplifier, 5V 10mA 30mW 13GHz, Silicon NPN Transistor (integrated circuit) Original PDF
    UPA807T NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD Original PDF
    uPA807T NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI Original PDF
    uPA807TKB NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini Mold Original PDF
    uPA807TKB-T1 NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini Mold Original PDF
    UPA807T-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA807T-T1 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD Original PDF
    UPA807T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    UPA807T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 24 GHz

    Abstract: UPA807T-T1 10 ghz transistor UPA807T OF transistor 13 2 ghz transistor NE686 S21E transistor 9 GHz 5 GHZ TRANSISTOR
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1


    Original     		PDF UPA807T NE686 UPA807T UPA807T-T1, 24-Hour transistor 24 GHz UPA807T-T1 10 ghz transistor OF transistor 13 2 ghz transistor S21E transistor 9 GHz 5 GHZ TRANSISTOR

    transistor j50

    Abstract: c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 NE686 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz


    Original     		PDF UPA807T NE686 UPA807T low12 24-Hour transistor j50 c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 S21E

    AZ 2535 08 101

    Abstract: transistor 9747 c 5929 transistor C 5478 transistor UPA807T 6292 transistor NE686 S21E UPA807T-T1 UPA807T-T1-A
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz


    Original     		PDF UPA807T NE686 UPA807T AZ 2535 08 101 transistor 9747 c 5929 transistor C 5478 transistor 6292 transistor S21E UPA807T-T1 UPA807T-T1-A

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


    Original     		PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    5252 F ic

    Abstract: ic 5252 F c 5252 transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807t OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21 EI2 = 9 dB TYP at 2 GHz


    OCR Scan     		PDF NE686 UPA807t UPA807T UPA807T-T1 5252 F ic ic 5252 F c 5252 transistor

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan     		PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T