Untitled
Abstract: No abstract text available
Text: PC board footprint NXP Semiconductors Footprint information for reflow soldering of TFBGA56 package SOT911-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste
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TFBGA56
OT911-1
OT911-1
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TFBGA56
Abstract: MO-195 TFBGA-56
Text: PDF: 2002 Jun 10 Philips Semiconductors Package outline TFBGA56: plastic thin fine-pitch ball grid array package; 56 balls; body 6 x 6 x 0.8 mm D SOT542-1 A B ball A1 index area A A2 E A1 detail X C e1 e 1/2 e ∅v M C A B b y y1 C ∅w M C K J H e G F e2
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TFBGA56:
OT542-1
MO-195
TFBGA56
MO-195
TFBGA-56
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Untitled
Abstract: No abstract text available
Text: PDF: 2000 Mar 07 Philips Semiconductors Package outline TFBGA56: plastic thin fine-pitch ball grid array package; 56 balls; body 6 x 6 x 0.8 mm D SOT542-1 A B ball A1 index area A A2 E A1 detail X C e1 v M B b e y y1 C ∅w M v M A K J e H G F e1 E D C B A
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TFBGA56:
OT542-1
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Untitled
Abstract: No abstract text available
Text: Package outline TFBGA56: plastic thin fine-pitch ball grid array package; 56 balls; body 6 x 6 x 0.8 mm D SOT542-1 A B ball A1 index area A E A2 A1 detail X C e1 e 1/2 e y y1 C ∅v M C A B b ∅w M C K J H e G F e2 E 1/2 e D C B A ball A1 index area 1 2 3
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TFBGA56:
OT542-1
MO-195
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Untitled
Abstract: No abstract text available
Text: Package outline TFBGA56: plastic thin fine-pitch ball grid array package; 56 balls; body 4 x 4.5 x 0.8 mm B D ball A1 index area SOT911-1 A A E A2 A1 detail X C e1 ∅v ∅w b e y1 C C A B C M M y H G F e E e2 D C 1/2 e B A ball A1 index area 1 2 3 4 5 6 X
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TFBGA56:
OT911-1
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sot542
Abstract: No abstract text available
Text: PDF: 1999 Jun 08 Philips Semiconductors Package outline TFBGA56: plastic thin fine-pitch ball grid array package; 56 balls; body 6 x 6 x 0.8 mm SOT542-1 D ball A1 index area A2 A E A1 detail X A b ∅w M y v A ZD e ZE K J H G e F E D C B A 1 2 3 4 5 6 7 8
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TFBGA56:
OT542-1
sot542
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MO-195
Abstract: TFBGA56 TFBGA-56
Text: PDF: 2000 Nov 21 Philips Semiconductors Package outline TFBGA56: plastic thin fine-pitch ball grid array package; 56 balls; body 6 x 6 x 0.8 mm D SOT542-1 A B ball A1 index area A A2 E A1 detail X C e1 v M B b e y y1 C ∅w M v M A K J e H G F e1 E D C B A
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TFBGA56:
OT542-1
MO-195
MO-195
TFBGA56
TFBGA-56
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Untitled
Abstract: No abstract text available
Text: BGA, HBGA, LFBGA & TFBGA FOOTPRINT REFLOW SOLDERING Philips Semiconductors F Prow ∅C Pball G Prow Pball MBL179 Reflow soldering(1) FOOTPRINT DIMENSIONS (mm) Prow Pball dia C F G PLACEMENT ACCURACY BGA156 SOT472-1 1.00 1.00 0.50 0.45 15.30 15.30 ±0.10
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MBL179
BGA156
OT472-1
BGA256
OT466-1
OT471-1
BGA292
OT489-1
BGA316
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Untitled
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
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88CAh
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
A0-A21
88CAh
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Untitled
Abstract: No abstract text available
Text: M58CR032C M58CR032D 32 Mbit 2Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA
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M58CR032C
M58CR032D
54MHz
100ns
TFBGA56
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Untitled
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
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M58CR032C
Abstract: M58CR032D TFBGA56
Text: M58CR032C M58CR032D 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers ■ – VPP = 12V for fast Program (optional)
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M58CR032C
M58CR032D
54MHz
TFBGA56
M58CR032C
M58CR032D
TFBGA56
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1992E
Abstract: RGB-444 9688x TDI cmos image sensor
Text: STV0974 Mobile Imaging DSP PRELIMINARY DATA Features Description • Supports VS6552 - 640 x 480 VGA color CMOS image sensor The STV0974 is a low power digital image processor designed for the VS6552 color VGA image sensor. The STV0974 uses advanced image
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STV0974
VS6552
STV0974
1992E
RGB-444
9688x
TDI cmos image sensor
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Untitled
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
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M36L0R7050U3
Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple
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M36L0Rx0x0UL3
256-Mbit
64-Mbit
M36L0R7050U3/M36L0R7060U3:
882Eh
M36L0R8050U3/M36L0R8060U3:
881Ch
M36L0R7050L3/M36L0R7060L3:
882Fh
M36L0R8050L3/M36L0R8060L3:
M36L0R7050U3
M69KM024A
M36L0R7050UL3
ADQ14
M36L0R8060L3
Numonyx MCP
M69KM048AB
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A0-A21
Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
A0-A21
CR10
M58CR064C
M58CR064D
M58CR064P
M58CR064Q
TFBGA56
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W29GL256S
Abstract: W29GL256SH9B W29GL256
Text: W29GL256S 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: May 10, 2013 Preliminary Revision A 1 W29GL256S TABLE OF CONTENTS 1 General Description . 8
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W29GL256S
256M-BIT
W29GL256S
W29GL256SH9B
W29GL256
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IC JRC 0820
Abstract: IS2103 0820 jrc LOG RX 2 1137 16 pin IC smd diode H5 ST72340 ST72F345C4T6 LQFP32 SMD Transistor g10 LQFP48
Text: ST72340, ST72344, ST72345 8-BIT MCU WITH UP TO 16K FLASH MEMORY, 10-BIT ADC, TWO 16-BIT TIMERS, TWO I2C, SPI, SCI PRELIMINARY DATA Memories – up to 16 Kbytes Program memory: Single voltage extended Flash XFlash with read-out and write protection, In-Circuit and In-Application Programming (ICP and IAP). 10K write/
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ST72340,
ST72344,
ST72345
10-BIT
16-BIT
IC JRC 0820
IS2103
0820 jrc
LOG RX 2 1137 16 pin IC
smd diode H5
ST72340
ST72F345C4T6
LQFP32
SMD Transistor g10
LQFP48
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Untitled
Abstract: No abstract text available
Text: M58CR032C M58CR032D 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR032C
M58CR032D
54MHz
TFBGA56
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TA247
Abstract: M58CR064C M58CR064D TFBGA56
Text: TA247 TECHNICAL ARTICLE ST challenges 3G Mobile Communications: High-speed 64 Mbit Low Voltage Flash Memory . Marco Redaelli, STMicroelectronics, Agrate, Italy Future third generation mobile communications will support high-speed multimedia data transfers
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TA247
M58CR064
TA247
M58CR064C
M58CR064D
TFBGA56
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88-CB
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C
M58CR064D
54MHz
TFBGA56
88-CB
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SST25VF128
Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Text: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash
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jtag programmer ST92F124
Abstract: 12vdc to 240vac inverter circuit ST7MIDI-EMU31 lcd 2x16 8051 STR73X CAN DK3200 Evaluation Board STR72x ST7265X SO20 package BGA and QFP Package 14x14
Text: 8, 16 and 32-bit microcontrollers Product and tool selection guide March 2006 www.st.com/mcu Current 8, 16 and 32-bit microcontroller families Timer functions Data Prog. RAM 2 A/D EP bytes (bytes) E PROM inputs 12 or 16-bit 8-bit FAST (IC/OC/ (IC/OC/ ROM
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32-bit
16-bit
4x12-bit
STR712FR0
STR715FR0
STR711FR1
jtag programmer ST92F124
12vdc to 240vac inverter circuit
ST7MIDI-EMU31
lcd 2x16 8051
STR73X CAN
DK3200 Evaluation Board
STR72x
ST7265X
SO20 package
BGA and QFP Package 14x14
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