Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIR862DP Search Results

    SIR862DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR862DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 50A 8-SOIC Original PDF
    SF Impression Pixel

    SIR862DP Price and Stock

    Vishay Siliconix SIR862DP-T1-GE3

    MOSFET N-CH 25V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR862DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.51348
    		Buy Now
    SIR862DP-T1-GE3 Digi-Reel 1
    • 1 $1.37
    • 10 $1.37
    • 100 $1.37
    • 1000 $1.37
    • 10000 $1.37
    		Buy Now
    SIR862DP-T1-GE3 Cut Tape 1
    • 1 $1.37
    • 10 $1.37
    • 100 $1.37
    • 1000 $1.37
    • 10000 $1.37
    		Buy Now

    Vishay Intertechnologies SIR862DP-T1-GE3

    Trans MOSFET N-CH 25V 32A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR862DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR862DP-T1-GE3 Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6806
    		Buy Now
    Mouser Electronics SIR862DP-T1-GE3 5,370
    • 1 $1.36
    • 10 $1.12
    • 100 $0.87
    • 1000 $0.601
    • 10000 $0.513
    		Buy Now
    TTI SIR862DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.513
    		Buy Now
    TME SIR862DP-T1-GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.82
    		Get Quote

    SIR862DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR862DP 2002/95/EC SiR862DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR862DP 2002/95/EC SiR862DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    mosfet 4800

    Abstract: 511000 4800 mosfet AN609
    Text: SiR862DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR862DP AN609, 31-Mar-10 mosfet 4800 511000 4800 mosfet AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR862DP 2002/95/EC SiR862DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR862DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR862DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR862DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR862DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR862DP 2002/95/EC SiR862DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836