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    511000 Search Results

    511000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-94511-000 Renesas Electronics Corporation FIFO 72241 Visit Renesas Electronics Corporation
    20021511-00014T1LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Shrouded header, 14 contacts Visit Amphenol Communications Solutions
    20021511-00030T4LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Shrouded header, 30 contacts Visit Amphenol Communications Solutions
    20021511-00060T8LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Shrouded header, 60 contacts Visit Amphenol Communications Solutions
    20021511-00012T4LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Shrouded header, 12 contacts Visit Amphenol Communications Solutions
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    511000 Price and Stock

    Littelfuse Inc 38511000000

    FUSE BRD MNT 1A 125VAC RADIAL
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    DigiKey 38511000000 Cut Tape 4,878 1
    • 1 $0.8
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    38511000000 Ammo Pack 4,200 1,400
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    Bristol Electronics 38511000000 992
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    EAO AG 82-5151.1000

    SWITCH PUSHBUTTON SPDT 3A 240V
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    DigiKey 82-5151.1000 Bulk 1,567 1
    • 1 $21.47
    • 10 $18.525
    • 100 $15.9737
    • 1000 $14.3939
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    Newark 82-5151.1000 Bulk 2 1
    • 1 $19.76
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    Sager 82-5151.1000 146 1
    • 1 $17
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    • 100 $14.77
    • 1000 $13.82
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    Fischer Elektronik GmbH & Co KG SK-51-1000-SA

    Extruded Heatsink
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    DigiKey SK-51-1000-SA Bulk 1,000 1
    • 1 $15.16
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    Fischer Elektronik GmbH & Co KG SK-451-1000-ME

    Extruded Heatsink for PCB mounti
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SK-451-1000-ME Bulk 1,000 1
    • 1 $45.45
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    Radiall 1019-7511-000

    SMC M STR BHD SP
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    DigiKey 1019-7511-000 Bulk 550 1
    • 1 $10.46
    • 10 $8.528
    • 100 $6.9523
    • 1000 $6.1625
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    Richardson RFPD 1019-7511-000 1
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    Find more 511000 price and stock on Findchips.com

    511000 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    511000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    511000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    511000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    511000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    511000001 Lumberg Automation TAP-P 4 Original PDF
    511000764 Lumberg Automation TAP-P 3 Original PDF

    511000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    511000BJ7

    Abstract: No abstract text available
    Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time


    Original     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 511000BJ7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lift | Spacing 5.08 mm AKZ1100/.-5.08-GREEN Order Data Spacing mm Technical Data Article Designation Article Number Solid min 0.2 mm² Material PA 6.6 2 10.16 AKZ1100/2-5.08-GREEN 51100020001F 200 solid max 4.0 mm² Flammability Class UL 94 V-0 3 15.24


    Original     		AKZ1100/. 08-GREEN AKZ1100/2-5 51100020001F AKZ1100/3-5 51100030001F AKZ1100/4-5 PDF

    511000

    Abstract: 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM
    Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time


    Original     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 511000 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W 0 R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The T H M 9 1 0 0 0 B S /B S G /B L is a 1,048,576 words by 9 bits dynam ic RAM m odule which assem bled 9 pcs of TC 511000B J on the printed circuit board. The THM 91000BS / BSG / BL is optim ized for


    OCR Scan     		511000B 91000BS THM91000BS SG/BL-60 THM91020BL-60 B-157 THM91OOOBS/BSG/BL-60 B-158 THM91000BS/BSG/BL-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60


    OCR Scan     		511000B/BL-60) 511000B/BL-70) 511000B-80) 1000B/BL-60) 1000B/BL-70) 1000B-80) PDF

    HB56A19B

    Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
    Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type


    OCR Scan     		HB56A19 576-Word 511000JP) 30-pin HB56A19A, HB56A19AT) HB56A19B) HB56A19B HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A PDF

    M511000B

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION T h e O K I M S C 2 3 1 2 B -x x Y S 9 /K S 9 is a fu lly d e co d ed 1 ,0 4 8 ,5 7 6 -w o rd x 9 -b it C M O S D y n a m ic R a n d o m A ccess M em ory M od u le co m p o sed o f n in e 1-M b D R A M s in S O J M S M 511000B p ack ag es m ou n ted w ith


    OCR Scan     		MSC2312B-xxYS9/KS9 576-Word 511000B SC2312B-xxYS9: SC2312B-xxKS9: M511000B PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to


    OCR Scan     		81000AS/ASG/AL 11000A 81000AS/AL THM81Q00 THMB1000 AS-70 THM81000AS/AL-70, THM81020AL-70, PDF

    DQ712

    Abstract: 511000BJ-70
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version


    OCR Scan     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 DQ712 511000BJ-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60


    OCR Scan     		511000B-60/-70/-80 511000BL-60/70 1000B/BL-60) 1000B/BL-70) 511000B-80) 511000BL-60) 511000BL-70) PDF

    tca 761

    Abstract: No abstract text available
    Text: HMS11000H Series 1048576-word x 1-bit CMOS Dynamic RAM The Hitachi H M 5 1 1 0 0 0 H series is a CMOS dynam ic R A M o r­ ganized 10 4857 6-w o rd x 1-bit. H M 5 1 1 0 0 0 H has realized higher HM 511000H P Scries density, higher performance and various functions by em ploying


    OCR Scan     		HMS11000H 1048576-word DP-18C) 511000H 60ns/70ns tca 761 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 1 -Bit Dynamic RAM HYB 511 000B-60/-70/-80 HYB 511000BL-60/-70 Advanced Inform ation • • 1 048 576 w ords by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 5 1 1000B/BL-60 70 ns access time 130 ns cycle tim e (HYB 5 1 1000B/BL-70)


    OCR Scan     		000B-60/-70/-80 511000BL-60/-70 1000B/BL-60) 1000B/BL-70) 511000B-80) 511000B/BL-60) 511000B/BL-70) PDF

    514400

    Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
    Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1


    OCR Scan     		P-SOJ-26/20-11 P-SOJ-26/20-52' P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-28/24-1 5116400J 5117400ASJ 5116400ASJ 5116400AJ 514400 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000 PDF

    HM511000AJP7

    Abstract: HM511000 HM511000AJP-7 dynamic ram 8 bit hm511000 HM511000AJP8 DP-18C HM511000AZP-8 HM511000A Hitachi Scans-001 HM511000AP-7
    Text: H M 5 1 1 0 0 0 A S e rie s H M 5 1 1 0 0 0 A L ~ S e rie s 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A /A L P Series • DESCRIPTION The Hitachi 511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. 511000A/AL has realized higher density, higher perform­


    OCR Scan     		HM511000A HM511000AL 1048576-Word HM511000A/AL 18-pin 20-pin HM511000AJP7 HM511000 HM511000AJP-7 dynamic ram 8 bit hm511000 HM511000AJP8 DP-18C HM511000AZP-8 Hitachi Scans-001 HM511000AP-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W ORDS x 8 BIT D Y N A M IC RAM M O DULE DE SC R IP TIO N T he T H M 8 1 0 0 0 B S /B S G /B L is a 1,048,576 w ords by 8 b its dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000B J on the p rin te d c ircu it board. T he T IÏM 81000B S / BSG / BL is optim ized for


    OCR Scan     		511000B 81000B 81000BS- THM81OOOBS/BSG/BL-60 THM81020BL-60 THM81000BS/BSG/BL-60 PDF

    hyb511000a

    Abstract: HYB511000 511000a HYB511000AL
    Text: B aeiSbGS GGS037b 5 Ó S I E G SIEMENS AKTIENGESELLSCHAF 47E D * T - Lf £ ' Z 3 * fS HYB 511000AL-60/-70 1M x 1-Bit Dynamic RAM Low Power Version Advance Information • 1 048 576 x 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time (HYB 511000AL-60)


    OCR Scan     		GGS037b 511000AL-60/-70 511000AL-60) HYB511Q0QAL-70) cycles/64 P-DIP-18-T 1000AL P-SOJ-26/20 511000AJL P-ZIP-20/19 hyb511000a HYB511000 511000a HYB511000AL PDF

    bl 9 a2

    Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
    Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The 511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511000B/BL is OKI’s CMOS silicon gate process technology.


    OCR Scan     		MSM511000B/BL_ 576-Word MSM511000B/BL cycles/64ms MSM5110OOB/BL 242i4D 00177fa3 bl 9 a2 18-PIN 20-PIN 26-PIN ZIP20-P-400 PDF

    514400J

    Abstract: 511000a
    Text: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An


    OCR Scan     		HB56D236B-8 HB56D236B-10 HB56D236B-12 152-Word 36-Bit 514400JP) 511000AJP) 72-pin D236B-8/10/12---------------------------- 514400J 511000a PDF

    MCM511000BJ60

    Abstract: CM511000 256Kx1 dRAM MCM511000 MCM511000BZ80 mcm511000bj L1219
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 511000B MCM51L1000B 1Mx1 CMOS Dynamic RAM Page Mode The M C M 511000B is a 0.8p CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CMOS silicon-gate process


    OCR Scan     		511000B MCM511000B 300-mi! 100-mil MCM51L1000B MCM511000BJ60 MCM5110OOBJBO MCM51L1000BJ60 CM511000 256Kx1 dRAM MCM511000 MCM511000BZ80 mcm511000bj L1219 PDF

    511000a

    Abstract: mode 811
    Text: M OT OR OL A M SC - CnEf l OR Y / A S I bSE D • L3t,75Sl M O TO R O LA Q0ÖT173 flbfl ■ riOT3 511000A Advance Information Commercial Plus and Mil/Aero Applications 1M x 1 CMOS Dynamic RAM Page Mode ELECTRICALLY TESTED PER: 511000A AVAILABLE AS The 511000A is a 1.On C M OS high-speed, dynam ic random access memory.


    OCR Scan     		11000A 511OOOA-XX/BXAJC 511000a mode 811 PDF

    511000B/BL-60

    Abstract: hyb 511
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60


    OCR Scan     		5110OOB/BJ/BZ-60/-70/-80 511000BUBJL/BZL-60/-70 511000B/BL-60) 511000B/BL-70) 511000B-80) 511000B/BL-60 hyb 511 PDF

    tc511000

    Abstract: 511000a
    Text: AZL-TOj TCÔ11000APL/AJUAZL-60 511000/UhUAJL/AZL-10 n T EN T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M IC R A M D ESC RIPTIO N T h e TC 511000A PL/A JL/A Z L is th e new g e n e ra tio n d y n am ic RAM o rg an ized 1,048,576 w ords by 1 b it. T he T C 511000A PL /A JL /A Z L u tilizes TOSH IBA'S CM OS Silicon g ate process technology as w ell as


    OCR Scan     		11000APL/AJUAZL-60 TC511000/UhUAJL/AZL-10 11000A TC511000APL/AJL/AZL-70, TC511000APL/AJL/AZL-80 TC5110OOAPL/AJL/AZL-10 tc511000 511000a PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 A d v a n c e d In fo rm a tio n • 1 048 576 w o rd s by 1 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in


    OCR Scan     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 PDF

    M511000A

    Abstract: M511000 511000A HM511000AJP-7 HM511000AP-12 511000 cmos M5110 HM511000AJP7 M51100 511000AJ
    Text: 511000A Series ~ 511000AL Series 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A/ALP Series • DESCRIPTION The Hitachi 511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. 511000A/AL has realized higher density, higher perform­


    OCR Scan     		HM511000A HM511000AL 1048576-Word HM511000A/AL 18-pin 20-pin M511000A M511000 511000A HM511000AJP-7 HM511000AP-12 511000 cmos M5110 HM511000AJP7 M51100 511000AJ PDF