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    SIR818DP Price and Stock

    Vishay Siliconix SIR818DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR818DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.48217
    		Buy Now
    SIR818DP-T1-GE3 Cut Tape 34 1
    • 1 $1.28
    • 10 $1.05
    • 100 $0.8166
    • 1000 $0.56383
    • 10000 $0.56383
    		Buy Now
    SIR818DP-T1-GE3 Digi-Reel 1
    • 1 $1.28
    • 10 $1.05
    • 100 $0.8166
    • 1000 $0.56383
    • 10000 $0.56383
    		Buy Now

    Vishay Intertechnologies SIR818DP-T1-GE3

    Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR818DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR818DP-T1-GE3 Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6391
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    Mouser Electronics SIR818DP-T1-GE3 8,904
    • 1 $1.12
    • 10 $0.937
    • 100 $0.754
    • 1000 $0.552
    • 10000 $0.482
    		Buy Now
    Verical SIR818DP-T1-GE3 3,000 12
    • 1 -
    • 10 -
    • 100 $0.6287
    • 1000 $0.5269
    • 10000 $0.4938
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    SIR818DP-T1-GE3 2,798 43
    • 1 -
    • 10 -
    • 100 $0.6475
    • 1000 $0.5788
    • 10000 $0.5538
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    Arrow Electronics SIR818DP-T1-GE3 Cut Strips 3,000 16 Weeks 1
    • 1 $0.7903
    • 10 $0.7163
    • 100 $0.6287
    • 1000 $0.5269
    • 10000 $0.4938
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    TME SIR818DP-T1-GE3 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.81
    		Get Quote

    SIR818DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR818DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A 8SOIC Original PDF

    SIR818DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters


    Original     		PDF SiR818DP 2002/95/EC SiR818DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR818DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR818DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR818DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR818DP AN609, 0422m 4656m 7558m 0212m 1245m 9876m 4498m 3899u

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR818DP 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters


    Original     		PDF SiR818DP 2002/95/EC SiR818DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    mosfet 50g

    Abstract: PowerPAK
    Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters


    Original     		PDF SiR818DP 2002/95/EC SiR818DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet 50g PowerPAK

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters


    Original     		PDF SiR818DP 2002/95/EC SiR818DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters


    Original     		PDF SiR818DP 2002/95/EC SiR818DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR818DP 2002/95/EC SiR818DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


    Original     		PDF LTC4229 24-Lead MSOP-16 DFN-16 LTC4353 LTC4355 SO-16, DFN-14 MSOP-16 LTC4357

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		PDF SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

    Untitled

    Abstract: No abstract text available
    Text: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy


    Original     		PDF 1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323