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    SIHP22N60E Search Results

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    SIHP22N60E Price and Stock

    Vishay Siliconix SIHP22N60E-E3

    MOSFET N-CH 600V 21A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP22N60E-E3 Tube 1,000
    • 1 -
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    • 1000 $2.00636
    • 10000 $2.00636
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    Vishay Siliconix SIHP22N60E-GE3

    MOSFET N-CH 600V 21A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP22N60E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.82121
    • 10000 $1.82121
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    Vishay Siliconix SIHP22N60EL-GE3

    MOSFET N-CH 600V 21A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP22N60EL-GE3 Tube 1,000
    • 1 -
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    • 1000 $2.06171
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    Vishay Siliconix SIHP22N60EF-GE3

    MOSFET N-CH 600V 19A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP22N60EF-GE3 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.60621
    • 10000 $1.60621
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    Vishay Intertechnologies SIHP22N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHP22N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHP22N60E-GE3 Reel 18 Weeks 1,000
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    • 1000 $2.48675
    • 10000 $2.059
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    Mouser Electronics SIHP22N60E-GE3 593
    • 1 $4.37
    • 10 $3.74
    • 100 $3.1
    • 1000 $2
    • 10000 $1.88
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    Newark SIHP22N60E-GE3 Bulk 856 1
    • 1 $4.28
    • 10 $3.66
    • 100 $3.03
    • 1000 $2.81
    • 10000 $2.81
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    TTI SIHP22N60E-GE3 Tube 3,000 50
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    • 100 $2.45
    • 1000 $2.35
    • 10000 $2.26
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    TME SIHP22N60E-GE3 1
    • 1 $4.63
    • 10 $4.18
    • 100 $3.31
    • 1000 $3.1
    • 10000 $3.1
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    Avnet Asia SIHP22N60E-GE3 23 Weeks 1,000
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    • 100 -
    • 1000 $2.1831
    • 10000 $2.03947
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    EBV Elektronik SIHP22N60E-GE3 1,000 19 Weeks 50
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    New Advantage Corporation SIHP22N60E-GE3 800 1
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    • 100 $3.86
    • 1000 $3.57
    • 10000 $3.57
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    South Electronics SIHP22N60E-GE3
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    Find more SIHP22N60E price and stock on Findchips.com

    SIHP22N60E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHP22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB Original PDF
    SIHP22N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 19A TO220AB Original PDF
    SIHP22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB Original PDF
    SIHP22N60EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO220AB Original PDF

    SIHP22N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sihp22n6

    Abstract: SiHP22N60E-GE3
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihp22n6 SiHP22N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHP22N60E

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		PDF SiHP22N60E 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHP22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    v0615a

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7


    Original     		PDF J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836