SIB912DK Search Results
SIB912DK Price and Stock
Vishay Siliconix SIB912DK-T1-GE3MOSFET 2N-CH 20V 1.5A PPAK8X8 |
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SIB912DK-T1-GE3 | Digi-Reel | 13,085 |
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Vishay Intertechnologies SIB912DK-T1-GE3DUAL N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIB912DK-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIB912DK-T1-GE3 | Reel | 348,000 | 111 Weeks | 3,000 |
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SIB912DK-T1-GE3 | 111 |
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SIB912DK-T1-GE3 | 6,000 | 30 |
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SIB912DK-T1-GE3 | Reel | 3,000 |
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SIB912DK-T1-GE3 | Reel | 9,000 | 3,000 |
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SIB912DK-T1-GE3 | 143 Weeks | 3,000 |
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SIB912DK Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
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SIB912DK-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.5A SC-75-6 | Original |
SIB912DK Datasheets Context Search
Catalog Datasheet |
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PDF |
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AN609Contextual Info: SiB912DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, |
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SiB912DK AN609, 22-Aug-08 AN609 | |
SiB912DK
Abstract: SC75-6L
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SiB912DK SC-75 SC75-6L-Dual SiB912DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SC75-6L | |
S-82-552
Abstract: 8255-2
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SiB912DK 18-Jul-08 S-82-552 8255-2 | |
Contextual Info: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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SiB912DK SC-75 SC75-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SC75-6L
Abstract: FET MARKING CODE SC-75
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SiB912DK SC-75 SC75-6L-Dual 18-Jul-08 SC75-6L FET MARKING CODE | |
"MARKING CODE G2"Contextual Info: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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SiB912DK SC-75 SC75-6L-Dual SiB912DK-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 "MARKING CODE G2" | |
Contextual Info: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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SiB912DK SC-75 SC75-6L-Dual SiB912DK-T1-GE3 11-Mar-11 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with |
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SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK | |
Contextual Info: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical Diagnostics and Monitoring X-Ray Machines 4 Patient Monitoring 5 Cardiac Pacing 6 |
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VMN-MS6761-1212 | |
VJ5301MContextual Info: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical 医療機器 X線機器 4 患者監視装置 5 ペースメーカー 6 血糖値測定器 7 |
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VMN-MS6792-1304-ME VJ5301M | |
SiB914Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with |
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SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |