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    SIB457EDK Price and Stock

    Vishay Siliconix SIB457EDK-T1-GE3

    MOSFET P-CH 20V 9A PPAK SC75-6
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    DigiKey SIB457EDK-T1-GE3 Reel 6,000 3,000
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    SIB457EDK-T1-GE3 Cut Tape 4,324 1
    • 1 $0.53
    • 10 $0.453
    • 100 $0.3151
    • 1000 $0.19998
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    SIB457EDK-T1-GE3 Digi-Reel 1
    • 1 $0.53
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    Vishay Intertechnologies SIB457EDK-T1-GE3

    Trans MOSFET P-CH 20V 6.8A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB457EDK-T1-GE3)
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    Avnet Americas SIB457EDK-T1-GE3 Reel 6 Weeks 3,000
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    Mouser Electronics SIB457EDK-T1-GE3 97,390
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    Verical SIB457EDK-T1-GE3 3,000 3,000
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    Arrow Electronics SIB457EDK-T1-GE3 3,000 6 Weeks 3,000
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    Newark SIB457EDK-T1-GE3 Cut Tape 3,000
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    TTI SIB457EDK-T1-GE3 Reel 3,000
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    TME SIB457EDK-T1-GE3 1
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    Avnet Asia SIB457EDK-T1-GE3 8 Weeks 3,000
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    Chip1Stop SIB457EDK-T1-GE3 3,000
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    EBV Elektronik SIB457EDK-T1-GE3 13 Weeks 3,000
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    SIB457EDK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIB457EDK-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9A PPAK SC75-6L Original PDF

    SIB457EDK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: 443587
    Text: SiB457EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiB457EDK AN609, 02-Apr-09 AN609 443587

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB457EDK Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB457EDK 18-Jul-08

    SC-75

    Abstract: SiB457EDK-T1-GE3 68A6
    Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB457EDK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 SiB457EDK-T1-GE3 68A6

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB457EDK SC-75 2002/95/EC SC-75-6L-Single 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single


    Original     		PDF SiB457EDK SC-75-6L-Single SC-75 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single


    Original     		PDF SiB457EDK SC-75-6L-Single SC-75 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SC-75

    Abstract: SiB457EDK-T1-GE3
    Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB457EDK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 SiB457EDK-T1-GE3

    BSC 68b

    Abstract: No abstract text available
    Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single


    Original     		PDF SiB457EDK SC-75 2011/65/EU SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 BSC 68b

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		PDF SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    SiB914

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		PDF SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497