15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
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S10-2445
Abstract: No abstract text available
Text: SPICE Device Model SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB410DK
18-Jul-08
S10-2445
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marking 2249 diode
Abstract: No abstract text available
Text: New Product SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 4.5 V 9 0.046 at VGS = 2.5 V 9 0.052 at VGS = 1.8 V 9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiB410DK
2002/95/EC
SC-75-6L-Single
SiB410DK-T1-GE3
11-Mar-11
marking 2249 diode
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SC75-6L
Abstract: No abstract text available
Text: New Product SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 4.5 V 9 0.046 at VGS = 2.5 V 9 0.052 at VGS = 1.8 V 9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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PDF
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SiB410DK
2002/95/EC
SC-75-6L-Single
SiB410DK-T1-GE3
11-Mar-11
SC75-6L
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Untitled
Abstract: No abstract text available
Text: SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET a RDS(on) () ID (A) 0.042 at VGS = 4.5 V 9 0.046 at VGS = 2.5 V 9 0.052 at VGS = 1.8 V 9 Qg (Typ.) • 100 % Rg Tested • Material categorization:
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SiB410DK
SC-75-6L-Single
SiB410DK-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiB410DK www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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SiB410DK
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 4.5 V 9 0.046 at VGS = 2.5 V 9 0.052 at VGS = 1.8 V 9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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PDF
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SiB410DK
2002/95/EC
SC-75-6L-Single
SiB410DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 4.5 V 9 0.046 at VGS = 2.5 V 9 0.052 at VGS = 1.8 V 9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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PDF
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SiB410DK
2002/95/EC
SC-75-6L-Single
SiB410DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with
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SC-75
SC-75
SC-75,
appli32
SiB437EDKT
SiB441EDK
SiB457EDK
SiB433EDK
SiB914DK
SiB912DK
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SiB914
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with
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SC-75
SC-75
SC-75,
space-const19
com/mosfets/powerpak-sc-75-package/
VMN-PT0196-1209
SiB914
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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