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    SIA911ADJ Price and Stock

    Vishay Siliconix SIA911ADJ-T1-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA911ADJ-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.1929
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    Vishay Intertechnologies SIA911ADJ-T1-GE3

    Transistor MOSFET Array Dual P-Channel 20V 3.2A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA911ADJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA911ADJ-T1-GE3 Reel 6 Weeks 3,000
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    • 10000 $0.15423
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    Mouser Electronics SIA911ADJ-T1-GE3 1,671
    • 1 $0.53
    • 10 $0.455
    • 100 $0.34
    • 1000 $0.207
    • 10000 $0.172
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    TTI SIA911ADJ-T1-GE3 Reel 3,000
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    • 1000 -
    • 10000 $0.15
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    SIA911ADJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA911ADJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.5A SC70-6 Original PDF

    SIA911ADJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 SiA911ADJ-T1-GE3 11-Mar-11

    SiA911ADJ

    Abstract: SiA911DJ SiA911DJ-T1-GE3
    Text: Specification Comparison Vishay Siliconix SiA911ADJ vs. SiA911DJ Description: Package: Pin Out: Dual P-Channel, 20-V D-S MOSFET PowerPAK SC-70 Identical Part Number Replacements: SiA911ADJ-T1-GE3 replaces SiA911DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF SiA911ADJ SiA911DJ SC-70 SiA911ADJ-T1-GE3 SiA911DJ-T1-GE3 Diode31 02-Dec-08

    SC-70-6

    Abstract: SiA911ADJ
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 SiA911ADJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiA911ADJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiA911ADJ 18-Jul-08

    SC-70-6

    Abstract: SiA911ADJ Qrr20
    Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF SiA911ADJ SC-70 SC-70-6 18-Jul-08 Qrr20

    6852

    Abstract: 8829 mosfet data sheet transistor 2030 U 8047 W 6852 AN609 SiA911ADJ
    Text: SiA911ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiA911ADJ AN609, 16-Oct-08 6852 8829 mosfet data sheet transistor 2030 U 8047 W 6852 AN609

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477