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    Vishay Siliconix SIA406DJ-T1-GE3

    MOSFET N-CH 12V 4.5A PPAK SC70-6
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    DigiKey SIA406DJ-T1-GE3 Reel
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    Vishay Intertechnologies SIA406DJ-T1-GE3

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    Bristol Electronics SIA406DJ-T1-GE3 1,957
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    Vishay Intertechnologies SIA406DJT1GE3

    N-CHANNEL 12-V (D-S) MOSFET Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIA406DJT1GE3 3,000
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    SIA406DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIA406DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 4.5A SC-70-6 Original PDF

    SIA406DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA406DJ Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0198 at VGS = 4.5 V 4.5 0.0222 at VGS = 2.5 V 4.5 0.0264 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA406DJ SC-70 2002/95/EC SC-70-6L-Single SiA406DJ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA406DJ Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0198 at VGS = 4.5 V 4.5 0.0222 at VGS = 2.5 V 4.5 0.0264 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA406DJ SC-70 2002/95/EC SC-70-6L-Single 18-Jul-08

    4532 MOSFET

    Abstract: 7824 AN609
    Text: SiA406DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiA406DJ AN609, 09-Sep-09 4532 MOSFET 7824 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA406DJ Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0198 at VGS = 4.5 V 4.5 0.0222 at VGS = 2.5 V 4.5 0.0264 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA406DJ SC-70 2002/95/EC SC-70-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIA406DJ

    Abstract: No abstract text available
    Text: New Product SiA406DJ Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0198 at VGS = 4.5 V 4.5 0.0222 at VGS = 2.5 V 4.5 0.0264 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA406DJ SC-70 2002/95/EC SC-70-6L-Single SiA406DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiA406DJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiA406DJ AN609, 1047u 5893u 5974m 3271u 7505m 7876m 1791m 06-Jun-14

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA406DJ Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA406DJ 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA406DJ Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 12 0.0198 at VGS = 4.5 V 4.5 0.0222 at VGS = 2.5 V 4.5 0.0264 at VGS = 1.8 V 4.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiA406DJ SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA406DJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiA406DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477