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    SI8812DB Price and Stock

    Vishay Siliconix SI8812DB-T2-E1

    MOSFET N-CH 20V 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8812DB-T2-E1 Cut Tape 2,683 1
    • 1 $0.51
    • 10 $0.344
    • 100 $0.51
    • 1000 $0.16574
    • 10000 $0.16574
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    SI8812DB-T2-E1 Digi-Reel 2,683 1
    • 1 $0.51
    • 10 $0.344
    • 100 $0.51
    • 1000 $0.16574
    • 10000 $0.16574
    		Buy Now
    SI8812DB-T2-E1 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.14395
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    Vishay Intertechnologies SI8812DB-T2-E1

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8812DB-T2-E1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI8812DB-T2-E1 Reel 6 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11624
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    Mouser Electronics SI8812DB-T2-E1 24,573
    • 1 $0.42
    • 10 $0.344
    • 100 $0.234
    • 1000 $0.163
    • 10000 $0.119
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    Verical SI8812DB-T2-E1 3,000 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.1435
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    Arrow Electronics SI8812DB-T2-E1 3,000 6 Weeks 3,000
    • 1 -
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    • 10000 $0.1409
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    TTI SI8812DB-T2-E1 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.123
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    SI8812DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8812DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V MICROFOOT Original PDF

    SI8812DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si8812

    Abstract: si88 AGS3
    Text: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)


    Original     		PDF Si8812DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8812 si88 AGS3

    Untitled

    Abstract: No abstract text available
    Text: Si8812DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8812DB AN609, 3494u 2948u 8691u 3740m 9059m 9916m 6633m 10-Aug-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)


    Original     		PDF Si8812DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8812DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 MICRO FOOT 0.8 x 0.8 S


    Original     		PDF Si8812DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8812DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8812DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402