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    SI8472DB Price and Stock

    Vishay Siliconix SI8472DB-T2-E1

    MOSFET N-CH 20V 4MICRO FOOT
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    DigiKey SI8472DB-T2-E1 Cut Tape 10,031 1
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    SI8472DB-T2-E1 Digi-Reel 10,031 1
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    SI8472DB-T2-E1 Reel 9,000 3,000
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    Vishay Intertechnologies SI8472DB-T2-E1

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8472DB-T2-E1)
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    Avnet Americas SI8472DB-T2-E1 Reel 21 Weeks 3,000
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    Mouser Electronics SI8472DB-T2-E1 4,715
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    Verical SI8472DB-T2-E1 2,609 38
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    Arrow Electronics SI8472DB-T2-E1 Cut Strips 2,609 21 Weeks 1
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    Newark SI8472DB-T2-E1 Cut Tape 5,319 1
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    SI8472DB-T2-E1 Reel 3,000
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    TTI SI8472DB-T2-E1 Reel 54,000 3,000
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    EBV Elektronik SI8472DB-T2-E1 22 Weeks 3,000
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    IBS Electronics SI8472DB-T2-E1 47 47
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    SI8472DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8472DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.3A MICRO Original PDF

    SI8472DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si8472DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 20 ID (A)a, e 0.044 at VGS = 4.5 V 4.5 0.050 at VGS = 2.5 V 4.2 0.056 at VGS = 1.8 V 4.0 0.070 at VGS = 1.5 V 1.5 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8472DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8472DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8472DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    1.0213

    Abstract: No abstract text available
    Text: Si8472DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8472DB AN609, 6509u 6083u 3644m 2717u 9253u 2500m 1182m 27-Jun-11 1.0213

    Untitled

    Abstract: No abstract text available
    Text: Si8472DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 20 ID (A)a, e 0.044 at VGS = 4.5 V 4.5 0.050 at VGS = 2.5 V 4.2 0.056 at VGS = 1.8 V 4.0 0.070 at VGS = 1.5 V 1.5 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8472DB 2002/95/EC Si8472DB-T2-E1 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8472DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 20 ID (A)a, e 0.044 at VGS = 4.5 V 4.5 0.050 at VGS = 2.5 V 4.2 0.056 at VGS = 1.8 V 4.0 0.070 at VGS = 1.5 V 1.5 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8472DB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8472DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8472DB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8472DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a, e 0.044 at VGS = 4.5 V 4.5 0.050 at VGS = 2.5 V 4.2 0.056 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 1.5 VDS (V) 20 Qg (TYP.) • TrenchFET power MOSFET


    Original     		PDF Si8472DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si8472

    Abstract: Si8472DB-T2-E1
    Text: Si8472DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 20 ID (A)a, e 0.044 at VGS = 4.5 V 4.5 0.050 at VGS = 2.5 V 4.2 0.056 at VGS = 1.8 V 4.0 0.070 at VGS = 1.5 V 1.5 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8472DB 2002/95/EC Si8472DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8472

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402