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    TME 57

    Abstract: No abstract text available
    Text: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs


    OCR Scan     		PDF EDI8F16512C S12Kx16 512Kx16bitCMOS 100ns EDI8F16512LP) 512KX16 8192K 128Kx8 TME 57

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8L32512C S12Kx32 512Kx32 EDI8L32512C 1Mx16 EDBL325I2C

    EDI8L32512C

    Abstract: EDI8L32512C25AC
    Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8L32512C 512Kx32 M0-47AE EDI8L32512C DBL32512C EDI8L32512C25AC

    S12KX

    Abstract: No abstract text available
    Text: mosaic S12KX 32 SRAM MODULE semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 PUMA 68S16000/A-020/025/35/45 Issue 4.3: November 1998 Description Features The PUMA 68S16000 is a 16Mbit CMOS High


    OCR Scan     		PDF 68S16000 16Mbit 512Kx8 S12KX 68S16000/A-020/025/35/45 24hrs 120secs 120-180secs 10-40secs

    7C4096

    Abstract: AS7C34096 AS7C4096 5hbs AA344
    Text: H igh Perform ance S12KX8 CMOS SRAM AS7C4096 A S7C 34096 1 5 1 2 K X 8 C M O S SR A M P relim inary inform ation SRAM Features • O rg a n iz a tio n : 5 2 4 ,2 8 8 w o rd s x 8 bits • H ig h sp e ed Easy m e m o ry e x p a n s io n w ith CE, OE in p u ts


    OCR Scan     		PDF 512KX8 AS7C4096 AS7C34096 36-pin AS7C4096 AS7C4096-20JC AS7C34096-20JC 7C4096 AS7C34096 5hbs AA344

    Untitled

    Abstract: No abstract text available
    Text: mx EDI8G32512V S12Kx32SRAMModule Ei£C1RONC DE9GN& NC. ADVANCED 512Kx32Static RAM CMOS, High SpeedModule F e a tu r e s 512Kx32 bit CMOS Static The EDI8G32512V is a high speed 16 megabit Static RAM Random Access Memory module organized as 512K words by 32 bits. This module is


    OCR Scan     		PDF EDI8G32512V S12Kx32SRAMModule 512Kx32 512Kx32Static EDI8G32512V 512Kx8 EDI8G32512V15MZC EDI8G32512V17MZC EDI8G32512V20MZC 72PnZP

    Untitled

    Abstract: No abstract text available
    Text: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current


    OCR Scan     		PDF S12KX8 S29F040 512Kx8 32-pin 29F040-70L AS29F040-70L 29F040-90L S29F040-120L AS29F040

    KM684000BLP-71

    Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
    Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package


    OCR Scan     		PDF KM684000B S12Kx8 32-DIP-600 32-SOP-52S, 32-TSOP2-400F/R KM684000BL KM684000BL-L KM684000BLI KM684000BLP-71 KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L

    Untitled

    Abstract: No abstract text available
    Text: «ffí 1 £ 1993 □PM D P S 5 1 2 X 1 6 n 3 Dense-Pac Microsystems, Inc. Ceramic, S12Kx16 SRAM Stack Modules O D E S C R IP T IO N : The D PS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight


    OCR Scan     		PDF S12Kx16 PS512X16n3 50-pin 100ns 120ns 150ns 125-C 30A097-08

    ed18f8512

    Abstract: ED18F8512C7066C
    Text: ^EDI EDI8F8512C S12Kx8 Static Ram ELECTRONIC QESKSN& MC 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    OCR Scan     		PDF EDI8F8512C S12Kx8 512Kx8 100ns EDI8F8512LP) 70-100ns) 20-35ns) 4096K ed18f8512 ED18F8512C7066C

    Untitled

    Abstract: No abstract text available
    Text: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY524800 S12KX 28pin 1AC03-20-MAY94 50Afl HY524800J

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):


    OCR Scan     		PDF MT28F800B1 16KB/8K-word 100ns 110ns, 150ns 48-PIN 0020bfl2 80-PIN

    CC650

    Abstract: H1-200-5
    Text: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read


    OCR Scan     		PDF 200mA 100ns/byte EDI68512C 512Kx8) EDI68512C 304-bit 512Kx8 EDI68612rature EDI68512C70LI CC650 H1-200-5

    EDI8F16512

    Abstract: No abstract text available
    Text: WDl EDI8F16512Ç 512KX16 SRAM Module ELECTRONIC. LÉSIGNS, INC.i 512KxWStatic RAM CMOS, Module iF eatures The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16bitCM0S Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory


    OCR Scan     		PDF EDI8F16512Ç 512KX16 512KxWStatic EDI8F16512C 8192K 128Kx8 EDI8F16512LP) 512Kx16bitCM0S 10Ghs EDI8F16512

    dram zip 256kx16

    Abstract: No abstract text available
    Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5


    OCR Scan     		PDF DPS1MS16P/XP 150ns, DPS512S8H4 DPS512S8P/Pt/PLL DPS512S8Ü DPS256X24P DPS256S32W DPS256X32L/W 512Kx16, 256Kx32 dram zip 256kx16

    Untitled

    Abstract: No abstract text available
    Text: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8M32512C 512Kx32 100ns EDI8M32512C, 512Kx8 EDI8M32512LP70GB EDI8M32512LP85GB

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    Untitled

    Abstract: No abstract text available
    Text: intei 28F800BV/CE 8-Mbit 512Kx16,1024Kx8 SmartVoltage Boot Block Flash Memory Family S m artDie P roduct Specification m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V


    OCR Scan     		PDF 28F800BV/CE 512Kx16 1024Kx8) x8/x16-Selectable 28F800 32-bit 16-Kbyte X28F800BV-T70 X28F800BV-B70 X28F800CE-T120

    MT8088

    Abstract: No abstract text available
    Text: PRELIMINARY M ir ^ n O M * MT8D88C132VH/432VH S , MT16D88C232VH/832VH (S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM MINICARD 4,8,16,32 m e g a b y t e s 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • • • • • • • •


    OCR Scan     		PDF MT8D88C132VH/432VH MT16D88C232VH/832VH 88-pin MT16D88C232VH/832VH MT8D8SC132VH 432VH WT16088C23 VH832VH MT8088

    Untitled

    Abstract: No abstract text available
    Text: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M


    OCR Scan     		PDF EDI8F32513C 512Kx32 EDI8F32513C 512Kx 512Kx8 KeeperEDI8F32513C S12Kx32 EDI8F32513C70MMC

    3DQ10

    Abstract: ICC1 EDI8L32512C20AI
    Text: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory


    OCR Scan     		PDF EDI8L32512C 512KX32 512Kx32CMOSHigh EDI8L32512C DSP96002 TMS320C3X, TMS320C4x MO-47AE 3DQ03 3DQ10 ICC1 EDI8L32512C20AI

    7085NS

    Abstract: 7085NS 7085NS 7085NS 44A08
    Text: ^EDI EDI8F32513C 5 12Kx32 Battery Backed SRAM Module ADVANCED Features 512Kx32 bit CMOS Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed SF1AM


    OCR Scan     		PDF 512Kx32 EDI8F32513C 12Kx32 EDI8F32513C 512Kx 512Kx8 7085NS 7085NS 7085NS 7085NS 44A08

    Untitled

    Abstract: No abstract text available
    Text: ED18LM32513V-RP 512KX32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed StaticRAM Features 512Kx32 C M O S Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 12,15 and 20ns RAM device with access times of 12,15 and 20ns over the


    OCR Scan     		PDF ED18LM32513V-RP 512KX32 MO-47AE EDI8LM32513V 16-Megabit 68Lead JL995-

    Untitled

    Abstract: No abstract text available
    Text: ! 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: ■ Organized a s four banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith sixteen 512Kx8 C M O S


    OCR Scan     		PDF 4x512Kx32 80-pin 512Kx32 29F040 512Kx8