TME 57
Abstract: No abstract text available
Text: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs
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EDI8F16512C
S12Kx16
512Kx16bitCMOS
100ns
EDI8F16512LP)
512KX16
8192K
128Kx8
TME 57
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Untitled
Abstract: No abstract text available
Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static
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EDI8L32512C
S12Kx32
512Kx32
EDI8L32512C
1Mx16
EDBL325I2C
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EDI8L32512C
Abstract: EDI8L32512C25AC
Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static
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EDI8L32512C
512Kx32
M0-47AE
EDI8L32512C
DBL32512C
EDI8L32512C25AC
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S12KX
Abstract: No abstract text available
Text: mosaic S12KX 32 SRAM MODULE semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 PUMA 68S16000/A-020/025/35/45 Issue 4.3: November 1998 Description Features The PUMA 68S16000 is a 16Mbit CMOS High
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68S16000
16Mbit
512Kx8
S12KX
68S16000/A-020/025/35/45
24hrs
120secs
120-180secs
10-40secs
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7C4096
Abstract: AS7C34096 AS7C4096 5hbs AA344
Text: H igh Perform ance S12KX8 CMOS SRAM AS7C4096 A S7C 34096 1 5 1 2 K X 8 C M O S SR A M P relim inary inform ation SRAM Features • O rg a n iz a tio n : 5 2 4 ,2 8 8 w o rd s x 8 bits • H ig h sp e ed Easy m e m o ry e x p a n s io n w ith CE, OE in p u ts
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512KX8
AS7C4096
AS7C34096
36-pin
AS7C4096
AS7C4096-20JC
AS7C34096-20JC
7C4096
AS7C34096
5hbs
AA344
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Untitled
Abstract: No abstract text available
Text: mx EDI8G32512V S12Kx32SRAMModule Ei£C1RONC DE9GN& NC. ADVANCED 512Kx32Static RAM CMOS, High SpeedModule F e a tu r e s 512Kx32 bit CMOS Static The EDI8G32512V is a high speed 16 megabit Static RAM Random Access Memory module organized as 512K words by 32 bits. This module is
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EDI8G32512V
S12Kx32SRAMModule
512Kx32
512Kx32Static
EDI8G32512V
512Kx8
EDI8G32512V15MZC
EDI8G32512V17MZC
EDI8G32512V20MZC
72PnZP
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current
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S12KX8
S29F040
512Kx8
32-pin
29F040-70L
AS29F040-70L
29F040-90L
S29F040-120L
AS29F040
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KM684000BLP-71
Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package
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KM684000B
S12Kx8
32-DIP-600
32-SOP-52S,
32-TSOP2-400F/R
KM684000BL
KM684000BL-L
KM684000BLI
KM684000BLP-71
KM684000BLG-5L
KM6840006LP-5
A13Q
KM684000BLG-7L
km684000blt
KM684000BLP5L
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Untitled
Abstract: No abstract text available
Text: «ffí 1 £ 1993 □PM D P S 5 1 2 X 1 6 n 3 Dense-Pac Microsystems, Inc. Ceramic, S12Kx16 SRAM Stack Modules O D E S C R IP T IO N : The D PS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight
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OCR Scan
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S12Kx16
PS512X16n3
50-pin
100ns
120ns
150ns
125-C
30A097-08
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ed18f8512
Abstract: ED18F8512C7066C
Text: ^EDI EDI8F8512C S12Kx8 Static Ram ELECTRONIC QESKSN& MC 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks
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EDI8F8512C
S12Kx8
512Kx8
100ns
EDI8F8512LP)
70-100ns)
20-35ns)
4096K
ed18f8512
ED18F8512C7066C
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Untitled
Abstract: No abstract text available
Text: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY524800
S12KX
28pin
1AC03-20-MAY94
50Afl
HY524800J
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):
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MT28F800B1
16KB/8K-word
100ns
110ns,
150ns
48-PIN
0020bfl2
80-PIN
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CC650
Abstract: H1-200-5
Text: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read
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200mA
100ns/byte
EDI68512C
512Kx8)
EDI68512C
304-bit
512Kx8
EDI68612rature
EDI68512C70LI
CC650
H1-200-5
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PDF
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EDI8F16512
Abstract: No abstract text available
Text: WDl EDI8F16512Ç 512KX16 SRAM Module ELECTRONIC. LÉSIGNS, INC.i 512KxWStatic RAM CMOS, Module iF eatures The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16bitCM0S Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory
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EDI8F16512Ç
512KX16
512KxWStatic
EDI8F16512C
8192K
128Kx8
EDI8F16512LP)
512Kx16bitCM0S
10Ghs
EDI8F16512
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dram zip 256kx16
Abstract: No abstract text available
Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5
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DPS1MS16P/XP
150ns,
DPS512S8H4
DPS512S8P/Pt/PLL
DPS512S8Ü
DPS256X24P
DPS256S32W
DPS256X32L/W
512Kx16,
256Kx32
dram zip 256kx16
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static
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EDI8M32512C
512Kx32
100ns
EDI8M32512C,
512Kx8
EDI8M32512LP70GB
EDI8M32512LP85GB
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KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L
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256Kb»
32KX8
KM62256CI-5/5L
KM62256CLE
KM62256CLI-7/7L
KM62256DL-5/5L
KM62256DLI-7/7L
512Kb»
64Kx8
KM68512AL-5/5L
KM736V789T-60
8AEL
65z7
KM68U512ALE-L
KM736V689T-8
KM732V595AT
KMB16
36SOJ
KM68U4000A
KM68V2000L-8L
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Untitled
Abstract: No abstract text available
Text: intei 28F800BV/CE 8-Mbit 512Kx16,1024Kx8 SmartVoltage Boot Block Flash Memory Family S m artDie P roduct Specification m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V
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28F800BV/CE
512Kx16
1024Kx8)
x8/x16-Selectable
28F800
32-bit
16-Kbyte
X28F800BV-T70
X28F800BV-B70
X28F800CE-T120
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PDF
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MT8088
Abstract: No abstract text available
Text: PRELIMINARY M ir ^ n O M * MT8D88C132VH/432VH S , MT16D88C232VH/832VH (S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM MINICARD 4,8,16,32 m e g a b y t e s 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • • • • • • • •
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MT8D88C132VH/432VH
MT16D88C232VH/832VH
88-pin
MT16D88C232VH/832VH
MT8D8SC132VH
432VH
WT16088C23
VH832VH
MT8088
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PDF
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Untitled
Abstract: No abstract text available
Text: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M
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EDI8F32513C
512Kx32
EDI8F32513C
512Kx
512Kx8
KeeperEDI8F32513C
S12Kx32
EDI8F32513C70MMC
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PDF
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3DQ10
Abstract: ICC1 EDI8L32512C20AI
Text: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory
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EDI8L32512C
512KX32
512Kx32CMOSHigh
EDI8L32512C
DSP96002
TMS320C3X,
TMS320C4x
MO-47AE
3DQ03
3DQ10
ICC1
EDI8L32512C20AI
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PDF
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7085NS
Abstract: 7085NS 7085NS 7085NS 44A08
Text: ^EDI EDI8F32513C 5 12Kx32 Battery Backed SRAM Module ADVANCED Features 512Kx32 bit CMOS Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed SF1AM
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512Kx32
EDI8F32513C
12Kx32
EDI8F32513C
512Kx
512Kx8
7085NS
7085NS 7085NS 7085NS
44A08
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PDF
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Untitled
Abstract: No abstract text available
Text: ED18LM32513V-RP 512KX32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed StaticRAM Features 512Kx32 C M O S Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 12,15 and 20ns RAM device with access times of 12,15 and 20ns over the
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ED18LM32513V-RP
512KX32
MO-47AE
EDI8LM32513V
16-Megabit
68Lead
JL995-
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Untitled
Abstract: No abstract text available
Text: ! 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: ■ Organized a s four banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith sixteen 512Kx8 C M O S
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4x512Kx32
80-pin
512Kx32
29F040
512Kx8
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