Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NX6508 Search Results

    NX6508 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NX6508 California Eastern Laboratories NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s CWDM APPLICATIONS Original PDF
    NX6508-AZ California Eastern Laboratories NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s CWDM APPLICATIONS Original PDF
    NX6508GH NEC 1470 TO 1610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH47 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). Original PDF
    NX6508GH47 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH49 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ). Original PDF
    NX6508GH49 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH51 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). Original PDF
    NX6508GH51 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH53 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH53 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1530 nm (typ). Original PDF
    NX6508GH55 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH55 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1550 nm (typ). Original PDF
    NX6508GH57 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). Original PDF
    NX6508GH57 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH59 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). Original PDF
    NX6508GH59 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH61 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6508GH61 NEC InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1610 nm (typ). Original PDF
    NX6508GJ47 NEC 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE Original PDF

    NX6508 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NX5501

    Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.


    Original     		PDF NX6508 NX5501 NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 STM-16

    nec d 588

    Abstract: NEC DIODE LASER PS2001
    Text: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.


    Original     		PDF NX6508 nec d 588 NEC DIODE LASER PS2001

    NX5501

    Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.


    Original     		PDF NX6508 NX5501 NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 STM-16 nec. 5.5 473

    nec. 5.5 473

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.


    Original     		PDF NX6508 nec. 5.5 473

    nec d 588

    Abstract: NX6508
    Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX6508 Series FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on ITU-T recommendations • LOW THRESHOLD CURRENT


    Original     		PDF NX6508 NX6508 NX6508GKxx nec d 588

    532 nm laser diode

    Abstract: NX6508 NX6508-AZ
    Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX6508 Series FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on ITU-T recommendations • LOW THRESHOLD CURRENT


    Original     		PDF NX6508 NX6508 532 nm laser diode NX6508-AZ

    NX5304

    Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6307 Series 1 310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6307 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6307S Series


    Original     		PDF NX6307 NX6307S STM-16, NX6307G NX5304 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501

    NX5304

    Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
    Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy


    Original     		PDF NX5306 NX5304 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16

    NX6504SH

    Abstract: NX6504SK NX5304 NX5306 NX6504 NX6504GH NX6504GK
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH, 156 Mb/s, 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These


    Original     		PDF NX5504

    NX5304

    Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor


    Original     		PDF NX6306 NX6306S NX6306G NX5304 NX5306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs

    NX5501

    Abstract: NX5304 NX5306 NX5306EH NX5306EK NX5307 NX5504 NX6306 STM-16
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NX5501

    Abstract: NX5304 NX5306 NX5307 NX5307EH NX5307EK NX5504 STM-16
    Text: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office


    Original     		PDF NX5307 STM-16 NX5501 NX5304 NX5306 NX5307EH NX5307EK NX5504 STM-16

    NX5501

    Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and


    Original     		PDF NX6509 STM-16 NX5501 NX5304 NX5306 NX5307 NX6509GH NX6509GK STM-16

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series


    Original     		PDF NX6504 NX6504S NX6504G

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This


    Original     		PDF NX6306 NX6306S NX6306G

    10G EML TOSA

    Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
    Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely


    Original     		PDF acros88-2247 04/2M 10G EML TOSA TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G

    NX5501

    Abstract: NX5304 NX5304EH NX5304EK NX5306 NX5307 NX5504 NX6306 STM-16
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These


    Original     		PDF NX5304 NX5501 NX5304EH NX5304EK NX5306 NX5307 NX5504 NX6306 STM-16

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NX5304

    Abstract: NX5304EH NX5304EK NX5306 NX5307 NX5501 NX5504 NX6306 STM-16 Laser diode Fabry-Perot
    Text: DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed for 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1), 622 Mb/s: STM4 (I-4, S-4.1), Gigabit Ethernet application and ideal for Synchronous Digital


    Original     		PDF NX5304 NX5304EH NX5304EK NX5306 NX5307 NX5501 NX5504 NX6306 STM-16 Laser diode Fabry-Perot

    NX5501

    Abstract: NX5304 NX5306 NX5307 NX5504 NX5504EH NX5504EK NX6306 STM-16
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH).


    Original     		PDF NX5504 NX5501 NX5304 NX5306 NX5307 NX5504EH NX5504EK NX6306 STM-16

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NX5304

    Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF