NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor
|
Original
|
PDF
|
NX6306
NX6306S
NX6306G
NX5304
NX5306
NX6306GH
NX6306GK
NX6306SH
NX6306SK
inGaAs
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
|
Original
|
PDF
|
NX6306
NX6306S
NX6306G
|
NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
|
Original
|
PDF
|
NX6306
NX6306S
NX6306G
|
NX6306
Abstract: NX6306GH NX6306GK NX6306SH NX6306SK
Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well NX6306S Series MQW structured Distributed Feed-Back (DFB) laser diode
|
Original
|
PDF
|
NX6306
NX6306S
NX6306G
6306S
NX6306GH
NX6306GK
NX6306SH
NX6306SK
|
NX6306
Abstract: NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip
Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB NX6306 LASER DIODE IN CAN PACKAGE Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED:
|
Original
|
PDF
|
NX6306
NX6306
NX6306G
NX6306GH
NX6306GI
NX6306GJ
NX6306GK
NX6306GH
NX6306GI
NX6306GJ
NX6306GK
NX6306SH
NX6306SI
LD chip
|
