NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
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nec d 588
Abstract: NEC DIODE LASER PS2001
Text: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
nec d 588
NEC DIODE LASER
PS2001
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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Original
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PDF
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
nec. 5.5 473
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nec. 5.5 473
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
nec. 5.5 473
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nec d 588
Abstract: NX6508
Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX6508 Series FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on ITU-T recommendations • LOW THRESHOLD CURRENT
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NX6508
NX6508
NX6508GKxx
nec d 588
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532 nm laser diode
Abstract: NX6508 NX6508-AZ
Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX6508 Series FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on ITU-T recommendations • LOW THRESHOLD CURRENT
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NX6508
NX6508
532 nm laser diode
NX6508-AZ
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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