NX5304
Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy
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NX5306
NX5304
NX5306EH
NX5306EK
NX5307
NX5501
NX5504
NX6306
STM-16
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NX5501
Abstract: NX5304 NX5306 NX5306EH NX5306EK NX5307 NX5504 NX6306 STM-16
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5306
Abstract: NX5306EH NX5306EK
Text: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 Series FOR 155 Mb/s, 622 Mb/s, and 1.25 Gb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED:
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NX5306
NX5306EK
NX5306EH
NX5306EK
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NX5306
Abstract: NX5306EH NX5306EK
Text: NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.3 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5306
NX5306EH
NX5306EK
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STM 125
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy
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Original
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PDF
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NX5306
STM 125
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