Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INGAAS Search Results

    INGAAS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    SF Impression Pixel

    INGAAS Price and Stock

    OSI Optoelectronics FCI-INGAAS-1500

    SENSOR PHOTODIODE 1550NM TO46-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI-INGAAS-1500 Tray 254 1
    • 1 $104.29
    • 10 $88.45
    • 100 $104.29
    • 1000 $104.29
    • 10000 $104.29
    		Buy Now

    OSI Optoelectronics FCI-INGAAS-Q3000

    SENSOR PHOTODIODE TO8 12 LEADS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI-INGAAS-Q3000 Bulk 29 1
    • 1 $502.52
    • 10 $502.52
    • 100 $502.52
    • 1000 $502.52
    • 10000 $502.52
    		Buy Now

    OSI Optoelectronics FCI-INGAAS-Q1000

    SENSOR PHOTODIODE TO5-8 MET CAN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI-INGAAS-Q1000 Bulk 21 1
    • 1 $287.86
    • 10 $287.86
    • 100 $201.8625
    • 1000 $201.8625
    • 10000 $201.8625
    		Buy Now

    OSI Optoelectronics FCI H250G-INGAAS-75

    SENSOR PHOTODIODE 1650NM TO46-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI H250G-INGAAS-75 Bulk 21 1
    • 1 $40.79
    • 10 $31.968
    • 100 $25.66363
    • 1000 $24.5885
    • 10000 $24.5885
    		Buy Now

    OSI Optoelectronics FCI-H250G-INGAAS-75

    SENSOR PHOTODIODE 1650NM TO46-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI-H250G-INGAAS-75 Bulk 19 1
    • 1 $40.79
    • 10 $40.79
    • 100 $25.66363
    • 1000 $24.5885
    • 10000 $24.5885
    		Buy Now
    Find more INGAAS price and stock on Findchips.com

    INGAAS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    InGaAs-100L UDT Sensors Photodiode, Module, 0.9A/W Sensitivity, 0.5nSec, 0.05nA Original PDF
    InGaAs-300L UDT Sensors Photodiode, Diffused Module, 0.9A/W Sensitivity, 4nSec, 0.1nA Original PDF

    INGAAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NX7526BF-AA

    Abstract: NX7526BF-AA-AZ
    Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well


    Original     		PDF NX7526BF-AA NX7526BF-AA NX7526BF-AA-AZ

    FP-Laser-Diode

    Abstract: 10 gb laser diode UNCOOLED MQW-FP LD
    Text: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TJ-SXCMI -01 Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for


    Original     		PDF 10Gbps C-13-010-TJ-SXCMI LUMNDS530-MAR1504 FP-Laser-Diode 10 gb laser diode UNCOOLED MQW-FP LD

    PIN Photodiode 1550nm

    Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
    Text: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA


    Original     		PDF 1550nm 1310nm C-15/13-F01/03/05- LUMNDS518-MAR2904 PIN Photodiode 1550nm PIN-TIA 5v InGaAs Photodiode 1550nm

    nec 501 t

    Abstract: NX8563LA NX8563LA-AZ NX8563LAS
    Text: DATA SHEET NEC's DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS NX8563LA Series FEATURES DESCRIPTION • PEAK OUTPUT POWER NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser


    Original     		PDF NX8563LA NX8563LA 14-PIN nec 501 t NX8563LA-AZ NX8563LAS

    PRBS23

    Abstract: 25gbps pin-tia pxxx PIN-TIA
    Text: 2.5Gbps PIN-TIA Receiver ModulesReceptacle & Pigtailed 5V T-11-2500-R/P-XXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single+5V operation • -40 to 85ºC operating temperature


    Original     		PDF T-11-2500-R/P-XXX LUMNDS558-0803 PRBS23 25gbps pin-tia pxxx PIN-TIA

    GR-468-CORE

    Abstract: NX7313UA NX7313UA-AZ
    Text: NEC's 1310 nm InGaAsP MQW FP TOSA NX7313UA FOR GIGABIT ETHERNET APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7313UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter optical subassembly (TOSA) with InGaAs monitor PIN-PD in a receptacle type package designed for LC type SFF/SFP transceiver


    Original     		PDF NX7313UA NX7313UA GR-468-CORE GR-468-CORE NX7313UA-AZ

    1550nm laser diode

    Abstract: sxxxx InGaAs Photodiode 1550nm
    Text: 1550nm Laser Diode Module C-15-001-T/R/PX-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-0009853


    Original     		PDF 1550nm C-15-001-T/R/PX-SXXXX/XXX-X TA-NWT-0009853 LUMNDS526-MAR2904 1550nm laser diode sxxxx InGaAs Photodiode 1550nm

    PIN Photodiode 1550nm sensitivity -55

    Abstract: PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01
    Text: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 5V) , Bi-directional Diplexer Optical Module C-15/13-D01/03/05- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA


    Original     		PDF 1550nm 1310nm C-15/13-D01/03/05- LUMNDS524-MAR2904 PIN Photodiode 1550nm sensitivity -55 PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01

    NX8570SD

    Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
    Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength


    Original     		PDF NX8570 NX8570SD 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153

    NX7527BF-AA

    Abstract: NX7527BF-AA-AZ
    Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 120 mW MIN NX7527BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW at IFP = 1000 mA, NEC's NX7527BF-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate


    Original     		PDF NX7527BF-AA NX7527BF-AA NX7527BF-AA-AZ

    T-11-2500A-P3-MFC

    Abstract: T-112500A-P3-S T-11-2500A-P3-SFC T-11-2500A-R3-SFC T-11-2500A-R3-SSC T-11-2500A-R3-SST
    Text: 2.5 Gbps PIN-TIA Receiver Modules 3.3 V Preliminary T-11-2500A-R3-SFC/ ST/ SC • T-11-2500A-P3-S/ SFC/ SSC/ SST • T-11-2500A-P3-M/ MFC/ MSC/MST Features • InGaAs/ InP PIN Photodiode with transimpedance amplifier • High sensitivity with Auto Gain Control (AGC)


    Original     		PDF T-11-2500A-R3-SFC/ T-11-2500A-P3-S/ T-11-2500A-P3-M/ LUMNDS082-0302 T-11-2500A-P3-MFC T-112500A-P3-S T-11-2500A-P3-SFC T-11-2500A-R3-SFC T-11-2500A-R3-SSC T-11-2500A-R3-SST

    PRBS 223-1

    Abstract: No abstract text available
    Text: 1.25 Gbps PIN-TIA Reciever 3.3V/5V T-11-1250-G/3-B Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC • Differential ended output • Single +3.3V/5V operation • -40 to 85ºC operating temperature • Integrated 4-pin TO-46 ball lens cap package


    Original     		PDF T-11-1250-G/3-B LUMNDS568-MAR1804 PRBS 223-1

    ROSA

    Abstract: PIN-TIA T-11-622-D-SLC T-11-622-D-SMU T-11-622-D-SSC
    Text: 622Mbps PIN-TIA Receiver Modules-ROSA 5V T-11-622-D-SXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single +5V operation • -40 to 85ºC operating temperature • SC/LC/MU ROSA package


    Original     		PDF 622Mbps T-11-622-D-SXX LUMNDS544-0703 ROSA PIN-TIA T-11-622-D-SLC T-11-622-D-SMU T-11-622-D-SSC

    IMD2

    Abstract: NDL5481PD NDL5481P1D NDL5481P2 NDL5481P2C NDL5481P2D NDL5481PC NDL5481P NDL5481P1 NDL5481P1C
    Text: 1300 nm OPTICAL ANALOG CATV SYSTEM φ80 µm InGaAs PIN PHOTO DIODE WITH SMF NDL5481P SERIES FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 0.1 nA The NDL5481P Series is an InGaAs PIN photo diode module with single mode fiber. It is designed for analog transmission


    Original     		PDF NDL5481P NDL5481P SM-9/125 24-Hour IMD2 NDL5481PD NDL5481P1D NDL5481P2 NDL5481P2C NDL5481P2D NDL5481PC NDL5481P1 NDL5481P1C

    C-151-DFB-E-XX-NT

    Abstract: No abstract text available
    Text: 1510nm MQW-DFB Laser Diode C-151-DFB-E-XX-NT Features • Uncooled laser diode with MQW structure • 5mW CW operation at 0 to +70ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode


    Original     		PDF 1510nm C-151-DFB-E-XX-NT TA-NWT-000983 LUMNDS508-MAR1504 C-151-DFB-E-XX-NT

    LD connector SC

    Abstract: NX8501 NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501BC-BA NX8501BC-CA NX8501CC NX8501CC-BA
    Text: 1510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE NX8501 SERIES FEATURES DESCRIPTION • PEAK WAVELENGTH: λP = 1510 nm The NX8501 Series is a 1510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The


    Original     		PDF NX8501 NX8501 TA-NWT-000983 SMF-28 24-Hour LD connector SC NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501BC-BA NX8501BC-CA NX8501CC NX8501CC-BA

    NX6506

    Abstract: NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ
    Text: NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:


    Original     		PDF NX6506 NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ

    PRBS23

    Abstract: 25gbps pin-tia
    Text: 2.5Gbps PIN-TIA Receiver ModulesReceptacle & Pigtailed 3.3V T-11-2500-P3/R3-XXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single+3.3V operation • -40 to 85ºC operating temperature


    Original     		PDF T-11-2500-P3/R3-XXX LUMNDS557-0803 PRBS23 25gbps pin-tia

    NX7328BF-AA

    Abstract: NX7328BF-AA-AZ
    Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well


    Original     		PDF NX7328BF-AA NX7328BF-AA NX7328BF-AA-AZ

    thermistor 054

    Abstract: No abstract text available
    Text: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max


    OCR Scan     		PDF OPD320 1550n 1000o 50/125pm) thermistor 054

    DL5551P2

    Abstract: NDL5516PC
    Text: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high


    OCR Scan     		PDF NDL5506P 14-PIN DL5590P NDL5531P NDL5531P1 DL5531P2 NDL5592P NDL5592P1 DL5551P2 NDL5516PC

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor