LZE18100R Search Results

LZE18100R Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
LZE18100R		Philips Semiconductors	NPN Silicon Microwave Power Transistor		Scan	PDF

LZE18100R Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ^ 3 3 -0 5 Philips Components Data sheet status Preliminary specification date of Issue June 1992 LZE18100R NPN silicon microwave power transistor MAINTENANCE TYPE PHILIPS INTERNATIONAL 711ÜÖEb OÜ4b322 27T « P H I N St.E D FEATU RES DESCRIPTION • Interdigitated structure giving a	OCR Scan	PDF	LZE18100R FO-57C 711DflEb DD4b323 FO-57C.
187 transistor npn Abstract: TRANSISTOR 187 LZE18100R Text: -T-3-3-OS Philips Components Data sheet status Preliminary specification date of Issue June 1992 MAINTENANCE TYPE LZE18100R NPN silicon microwave power transistor SbE D PHILIPS i n t e r n a t i o n a l • FEATURES D E S C R IP T IO N • In te rd ig ita te d s tru c tu re g iving a	OCR Scan	PDF	LZE18100R 711002b FO-57C T-33-05 711DflEb 0D4b323 FO-57C. 187 transistor npn TRANSISTOR 187 LZE18100R
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
LTE-3201 Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S Text: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S	OCR Scan	PDF	bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S	OCR Scan	PDF	btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45