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    LX1780 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT BRIEF Subject to change LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces


    Original     		PDF LX1780 LX1780

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    hcpl 322j

    Abstract: hcpl-322j HCPL316
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3

    hcpl-322j

    Abstract: hcpl 322j
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j

    IGBT DIVER IC

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA16JT17-247 O-247AB GA16JT17 03E-47 719E-28 68E-10 72E-09 00E-03 IGBT DIVER IC