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    GeneSic Semiconductor Inc GA16JT17-247

    TRANS SJT 1700V 16A TO247AB
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    DigiKey GA16JT17-247 Tube 150
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    NAC GA16JT17-247 150
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    GA16JT17 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA16JT17-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1700V 16A TO-247AB Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA16JT17-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA16JT17-247 GA16JT17-247. 29-JAN-2015 GA16JT17 833EAND 833E-48 073E-26 4E-12 014E-09

    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA16JT17-247 O-247 GA16JT17 833E-48 073E-26 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA16JT17-247 O-247AB GA16JT17 03E-47 72E-28 68E-10 72E-09 00E-03

    IGBT DIVER IC

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA16JT17-247 O-247AB GA16JT17 03E-47 719E-28 68E-10 72E-09 00E-03 IGBT DIVER IC

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182