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    GA50JT12 Price and Stock

    GeneSic Semiconductor Inc GA50JT12-247

    TRANS SJT 1200V 100A TO247AB
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    DigiKey GA50JT12-247 Tube 150
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    NAC GA50JT12-247 1
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    GeneSic Semiconductor Inc GA50JT12-263

    TRANSISTOR 1200V 100A TO263-7
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    DigiKey GA50JT12-263 Tube 150
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    Navitas Semiconductor GA50JT12-247ISO

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    Onlinecomponents.com GA50JT12-247ISO
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    Navitas Semiconductor GA50JT12-247

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    Onlinecomponents.com GA50JT12-247
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    GeneSic Semiconductor Inc GA50JT12-247ISO

    SiC SJT- 1200V/50A ISOLATED
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    NAC GA50JT12-247ISO 150
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    GA50JT12 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA50JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1.2KV 50A Original PDF

    GA50JT12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-CAL Section VII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT12-CAL.


    Original     		PDF GA50JT12-CAL sic/sjt/GA50JT12-CAL GA50JT12-CAL. 25-AUG-2014 GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 m Features •       175 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA50JT12-CAL GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 GA50JT12-CAL

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.2 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA50JT12-247 GA50JT12-247. 29-JAN-2015 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area


    Original     		PDF GA50JT12-CAL GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3

    hcpl-322j

    Abstract: hcpl 322j
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package •      RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses


    Original     		PDF GA15IDDJT22-FR4 GA50JT12-247 GA50SICP12-227 GA100SICP12-227